The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct di...The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct distribution diagrams of surface speciation in the SiO_(2)-metal ion-H^(+) system in aqueous solutions.Equilib-rium constants for both surface and solution reactions were introduced in the composition matrix.Surface complexation,surface charge as well as notation results were compared and a good agreement was obtained.Furthermore,flotation mechanisms of quartz activation by common metal ions like Ca^(2+),Mg^(2+),Fe^(2+) are quantitatively discussed based on the surface reaction equilibrium constants.展开更多
In this work,low-softening-temperature and low-modulus SiO_(2) was introduced as an embedded interface between SiC nanowires(SiCnws)and a Ba_(x)Sr_(1−x)Al_(2)Si_(2)O_(8) ceramic matrix to enhance strength and toughnes...In this work,low-softening-temperature and low-modulus SiO_(2) was introduced as an embedded interface between SiC nanowires(SiCnws)and a Ba_(x)Sr_(1−x)Al_(2)Si_(2)O_(8) ceramic matrix to enhance strength and toughness of the ceramic.During the sintering process,molten SiO_(2) enhances the flowability of the ceramic powders and modifies the dispersion of SiCnws.The strengthening effect of SiCnws was fully realized,and the flexural strength of the optimized ceramics reached 193±16 MPa,which represents an increase of 52.6%.After the formation of the embedded SiO_(2) interface with a low modulus,cracks can deflect along the SiCnws surface,which is consistent with the criterion of He and Hutchinson.This can effectively extend the crack propagation path,and the fracture toughness(K_(IC))is thus improved by 94.0%,reaching 3.1±0.5 MPa·m^(1/2).展开更多
The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characterist...The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.展开更多
Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe conten...Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe content and different ball milling time were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), Mossbauer spectroscopy, and Faraday magnetic balance in a wide temperature range. The results indicate that the mi-crostructure and magnetic properties are closely related to ball milling time and Fe content. When Fe content is less than 20 wt% , the sample after 80-h ball milling has very complex microstructure. Small α-Fe grains and Fe cluster are implanted in SiO2 matrix. And there are not only isolated α-Fe granular and Fe cluster, but also nanometer scaled sandwich network-like structure. Fex (SiO_2) 1 - x nanocomposite samples display a rich variety of physical and chemical properties as a result of their unique nanostructure, strong interface interaction and inter-osmosis effect in Fe-SiO_2 boundaries, and the grain size effect.展开更多
Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require car...Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.展开更多
Newly synthesized functional nanoparticles,3-amino-1,2,4-triazole(ATA)/SiO_(2)—TiO_(2)were introduced to the polyurethane(PU)matrix.Electrochemical techniques were used to investigate the barrier properties of the sy...Newly synthesized functional nanoparticles,3-amino-1,2,4-triazole(ATA)/SiO_(2)—TiO_(2)were introduced to the polyurethane(PU)matrix.Electrochemical techniques were used to investigate the barrier properties of the synthesized PU—ATA/SiO_(2)—TiO_(2)nanocomposite coated steel specimen.In natural seawater,electrochemical impedance spectroscopy experiments indicated outstanding protective behaviour for the PU—ATA/SiO_(2)—TiO_(2)coated steel.The coating resistance(Rcoat)of PU—ATA/SiO_(2)—TiO_(2)was determined to be 2956.90 kΩ·cm^(−2).The Rcoat of the PU—ATA/SiO_(2)—TiO_(2)nanocomposite coating was found to be over 50%higher than the PU coating.The current measured along the scratched surface of the PU—ATA/SiO_(2)—TiO_(2)coating was found to be very low(1.65 nA).The enhanced ATA/SiO_(2)—TiO_(2)nanoparticles inhibited the entry of electrolytes into the coating interface,as revealed by scanning electron microscopy/energy dispersive X-ray spectroscopy and X-ray diffraction analysis of the degradation products.Water contact angle testing validated the hydrophobic nature of the PU—ATA/SiO_(2)—TiO_(2)coating(θ=115.4°).When the concentration of ATA/SiO_(2)—TiO_(2)nanoparticles was 2 wt%,dynamic mechanical analysis revealed better mechanical properties.Therefore,the newly synthesised PU—ATA/SiO_(2)—TiO_(2)nanocomposite provided excellent barrier and mechanical properties due to the addition of ATA/SiO_(2)—TiO_(2)nanoparticles to the polyurethane,which inhibited material degradation and aided in the prolongation of the coated steel’s life.展开更多
文摘The correlation between surface complexation at the SiO_(2)H_(2)O interface and quartz notation behavior was studied.Computer assisted calculations,using the programs SOLGASWATER,were adapted in order to con-struct distribution diagrams of surface speciation in the SiO_(2)-metal ion-H^(+) system in aqueous solutions.Equilib-rium constants for both surface and solution reactions were introduced in the composition matrix.Surface complexation,surface charge as well as notation results were compared and a good agreement was obtained.Furthermore,flotation mechanisms of quartz activation by common metal ions like Ca^(2+),Mg^(2+),Fe^(2+) are quantitatively discussed based on the surface reaction equilibrium constants.
基金supported by the National Key R&D Program of China(No.2022YFC2204500)the National Natural Science Foundation of China(No.52231007).
文摘In this work,low-softening-temperature and low-modulus SiO_(2) was introduced as an embedded interface between SiC nanowires(SiCnws)and a Ba_(x)Sr_(1−x)Al_(2)Si_(2)O_(8) ceramic matrix to enhance strength and toughness of the ceramic.During the sintering process,molten SiO_(2) enhances the flowability of the ceramic powders and modifies the dispersion of SiCnws.The strengthening effect of SiCnws was fully realized,and the flexural strength of the optimized ceramics reached 193±16 MPa,which represents an increase of 52.6%.After the formation of the embedded SiO_(2) interface with a low modulus,cracks can deflect along the SiCnws surface,which is consistent with the criterion of He and Hutchinson.This can effectively extend the crack propagation path,and the fracture toughness(K_(IC))is thus improved by 94.0%,reaching 3.1±0.5 MPa·m^(1/2).
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.
基金Project supported by the Foundation of State ScienceTechnology Commission of China the Natural Science Foundation of Anhui Province
文摘Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe content and different ball milling time were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), Mossbauer spectroscopy, and Faraday magnetic balance in a wide temperature range. The results indicate that the mi-crostructure and magnetic properties are closely related to ball milling time and Fe content. When Fe content is less than 20 wt% , the sample after 80-h ball milling has very complex microstructure. Small α-Fe grains and Fe cluster are implanted in SiO2 matrix. And there are not only isolated α-Fe granular and Fe cluster, but also nanometer scaled sandwich network-like structure. Fex (SiO_2) 1 - x nanocomposite samples display a rich variety of physical and chemical properties as a result of their unique nanostructure, strong interface interaction and inter-osmosis effect in Fe-SiO_2 boundaries, and the grain size effect.
基金funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU),under grant agreement No.101007229support from the European Union’s Horizon 2020 Research and Innovation Programme,Germany,France,Belgium,Austria,Sweden,Spain,and Italy
文摘Vertical GaN power MOSFET is a novel technology that offers great potential for power switching applications.Being still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their development.In this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization approaches.Specifically,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS decrease.Simulations allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.
文摘Newly synthesized functional nanoparticles,3-amino-1,2,4-triazole(ATA)/SiO_(2)—TiO_(2)were introduced to the polyurethane(PU)matrix.Electrochemical techniques were used to investigate the barrier properties of the synthesized PU—ATA/SiO_(2)—TiO_(2)nanocomposite coated steel specimen.In natural seawater,electrochemical impedance spectroscopy experiments indicated outstanding protective behaviour for the PU—ATA/SiO_(2)—TiO_(2)coated steel.The coating resistance(Rcoat)of PU—ATA/SiO_(2)—TiO_(2)was determined to be 2956.90 kΩ·cm^(−2).The Rcoat of the PU—ATA/SiO_(2)—TiO_(2)nanocomposite coating was found to be over 50%higher than the PU coating.The current measured along the scratched surface of the PU—ATA/SiO_(2)—TiO_(2)coating was found to be very low(1.65 nA).The enhanced ATA/SiO_(2)—TiO_(2)nanoparticles inhibited the entry of electrolytes into the coating interface,as revealed by scanning electron microscopy/energy dispersive X-ray spectroscopy and X-ray diffraction analysis of the degradation products.Water contact angle testing validated the hydrophobic nature of the PU—ATA/SiO_(2)—TiO_(2)coating(θ=115.4°).When the concentration of ATA/SiO_(2)—TiO_(2)nanoparticles was 2 wt%,dynamic mechanical analysis revealed better mechanical properties.Therefore,the newly synthesised PU—ATA/SiO_(2)—TiO_(2)nanocomposite provided excellent barrier and mechanical properties due to the addition of ATA/SiO_(2)—TiO_(2)nanoparticles to the polyurethane,which inhibited material degradation and aided in the prolongation of the coated steel’s life.
