Graded doped structure fabricated by vacuum spray method to improve the luminance of polymer light-emitting diodes

An increase in luminance of a polymer light-emitting diode(PLED) was obtained by fabricating a graded doping structure using a vacuum spray method. The small electron transport molecule, Tris(8-hydroxyquinolinato) aluminum(III)(Alq3), was graded dispersed along the film in the direction of growth in the hole transport polymer poly(3-hexylthiophene-2,5-diyl)(P3HT, regiorandom) layer of the PLED, despite being dissolved in the same organic solvent as the polymer. The PLED reported here, which is composed of a graded structure, emitted brighter light than PLEDs composed of pure polymer or of a blend of active layers prepared by spin coating and/or vacuum spray methods.

Solution Processable Material Derived from Aromatic Triazole, Azomethine and Tris: Preparation and Hole-Buffering Application in Polymer Light-Emitting Diodes

This work presents the synthesis of a new hole-buffering material TAZS and its successful application in polymer light-emitting diodes to enhance device performance. The TAZS is composed of aromatic 1,2,4-triazolylcore linked with three trihydroxy tert-butyl terminals via azomethine linkages. The TAZS forms ashomogeneous film deposited by spin-coating process. The HOMO and LUMO levels of TAZS are -5.23 eV and -2.40 eV, respectively, as estimated from cyclic voltammogram. The current density results of hole-only and electron-only devices confirm strong hole-buffering capability of TAZS layer. Multilayer PLEDs with different thickness of TAZS (ITO/PEDOT: PSS/TAZS (x nm)/SY/ETL/LiF/Al) have been successfully fabricated, using spin-coating process to deposit hole-injecting PEDOT: PSS, TAZS, and emissive SY layers. The PLED with 16 nm TAZS reveals the optimal device performance, with maximum luminance and maximum current efficiency of 19,046 cd/m2 and 4.08 cd/A, respectively, surpassing those without TAZS as HBL (8484 cd/m2, 2.13 cd/A). The hole-buffering characteristic of TAZS contributes greatly to improved charges’ recombination ratio and enhanced emission efficiency.

Hole-Buffer Material Derived from Pyrene, Schiff Base and Tris to Enhance Emission Efficiency of Polymer Light-Emitting Diodes

Inserting a hole-buffer layer is an effective way to enhance emission efficiency of electroluminescence devices. We have successfully synthesized a new hole-buffer material PSB composed of pyrene, Schiff base and trihydroxy tert-butyl groups by the Suzuki-coupling reaction. The HOMO and LUMO lev-els were -6.33 eV and -2.55 eV, respectively, as estimated from cyclic volt-ammograms. In addition, homogeneous films (rms roughness ~2 nm) were readily obtained by spin-coating process. Multilayer polymer light-emitting diodes, ITO/PEDOT:PSS/PSB/SY/LiF/Al, have been fabricated using PSB as hole-buffer layer (HBL). Inserting PSB as HBL significantly enhances the per-formance (maximum luminance: 26,439 cd/m2, maximum current efficiency: 7.03 cd/A), compared with the one without PSB (9802 cd/m2, 2.43 cd/A). It is also superior to the device with conventional BCP as hole-blocking layer (ITO/PEDOT:PSS/SY/BCP/LiF/Al: 15,496 cd/m2, 5.56 cd/A). Current results strongly indicate that the PSB is a potential hole-buffer material for electrolu-minescent devices.

Effect of Pixellization on Efficiency and Stability of MEH-PPV Based Polymer Light-Emitting Diodes

Organic light-emitting diodes are generally depicted as sequential deposition of active layers and electrodes onto a substrate, but commercial devices are fabricated using pixellization technique, where an insulator layer is introduced between the indium tin oxide and organic layer to define the area of the active device. Here, we have inserted a layer of photoresist (thickness ~ 200 nm) at the edge of patterned anode (indium tin oxide) and between the anode and hole transport layer (Poly 3, 4-ethylenedioxythiophene poly styrenesulfonate) to examine its effect on the leakage current of organic light-emitting diode and on the electron-hole recombination ratio in the emission area, as a result increasing the luminance efficiency. Current leakage causes the loss of charges, which adversely affects the recombination of electrons and holes in the emitting zone and results in poorer luminance efficiency. In this paper, we report the effect of pixellization on current density-voltage, luminescence-voltage and degradation behavior of single layer Poly[2-methoxy-5-(2’-ethylhexyloxy)-1, phenylene vinylene] based organic light-emitting diodes. Devices with isolation layer have 30% higher external electroluminescence quantum efficiency and reduced device degradation in comparison to without isolation layer.

Fluorene pendant-functionalization of poly(N-vinylcarbazole)as deep-blue fluorescent and host materials for polymer light-emitting diodes

π-Electron coupling of pendant conjugated segment inπ-stacked semiconducting polymers always causes the formation of defect trapped sites and further quenched high-band excitons,which is harmful to the performance and stability of deep-blue polymer light-emitting diodes(PLEDs).Herein,considerate of“defect”carbazole(Cz)electromers in poly(N-vinylcarbazole)(PVK),a series of fluorene units are introduced into pendant segments(PVCz-DMeF,PVCz-FMeNPh and PVCz-DFMeNPh)to suppress the strongπ-electron coupling of pendant Cz units and enhance radiative transition toward fabricating sable PLEDs.Compared to PVCz-FMeNPh and PVCz-DFMeNPh,PVCz-DMeF spin-coated films show a relatively efficient deep-blue emission,completely similar to its single pendant chromophore,confirmed an extremely weak charge-transfer and electron coupling between adjacent pendant segments.Therefore,PLEDs based on PVCz-DMeF present stable and deep-blue emission with a high color purity(0.17,0.08),associated with extremely weak defect emission at 600∼700nm(induced by carbazole electromers).Finally,PLEDs based on PVCz-DMeF/F8BT blended films(1:1)also present the high maximum luminance(Lmax)of 6261 cd/m2 and current efficiency(CE_(max))of 2.03 cd/A,confirmed slightly trapped sites formation.Therefore,precisely control the arrangement and packing model of pendant units inπ-stacked polymer is an essential prerequisite for building efficient and stable emitter for optoelectronic devices.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

A novel crosslinkable electron injection/transporting material for solution processed polymer light-emitting diodes

A novel crosslinkable water/alcohol soluble conjugated polymer PFN-C containing oxetane groups and aminoalkyl groups in the side chains has been developed and used as highly efficient electron injection and transporting material for polymer light-emitting diodes (PLEDs). The unique solubility in polar solvents and crosslinkable ability of PFN-C render it a good can- didate for solution processed multilayer PLEDs. It was found that PFN-C can greatly enhance the electron injection from high work-function metal cathode, due to its pendant amino groups. As a result, PLEDs with PFN-C/Al cathode exhibited compara- ble device performance to the devices with Ba/Al cathode. The resulting green light-emitting device showed promising perfor- mance with a maximum luminance efficiency of 13.53 cd A-1.

Tetraphenylethylene-BODIPY aggregation-induced emission luminogens for near-infrared polymer light-emitting diodes

The aggregation-induced emission(AIE) phenomenon provides a new direction for the development of organic light-emitting devices. Here, we present a new class of emitters based on 4,4-difluoro-4-bora-3 a,4 a-diaza-s-indacene(BODIPY), functionalized at different positions with tetraphenylethylene(TPE), which is one of the most famous AIE luminogens. Thanks to this modification, we were able to tune the photoluminescence of the BODIPY moiety from the green to the near-infrared(NIR)spectral range and achieve PL efficiencies of ~50% in the solid state. Remarkably, we observed an enhancement of the AIE and up to ~100% photoluminescence efficiencies by blending the TPE-substituted BODIPY fluorophores with a poly[(9,9-di-noctylfluorene-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,7-diyl)](F8 BT) matrix. By incorporating these blends in organic lightemitting diodes(OLEDs), we obtained electroluminescence peaked in the range 650–700 nm with up to 1.8% external quantum efficiency and ~2 m W/cm2 radiance, a remarkable result for red/NIR emitting and solution-processed OLEDs.

Alkali metal salts doped pluronic block polymers as electron injection/transport layers for high performance polymer light-emitting diodes

A series of alkali metal salts doped pluronic block copolymer F127 were used as electron injection/transport layers (ETLs) for polymer light-emitting diodes with poly[2-(4-(3′,7′-dimethyloctyloxy)-phenyl)-p-phenylenevinylene] (P-PPV) as the emission layer. It was found that the electron transport capability of F127 can be effectively enhanced by doping with alkali metal salts. By using Li2CO3 (15%) doped F127 as ETL, the resulting device exhibited improved performance with a maximum luminous efficiency (LE) of 13.59 cd/A and a maximum brightness of 5529 cd/m2, while the device with undoped F127 as ETL only showed a maximum LE of 8.78 cd/A and a maximum brightness of 2952 cd/m2. The effects of the doping concentration, cations and anions of the alkali metal salts on the performance of the resulting devices were investigated. It was found that most of the alkali metal salt dopants can dramatically enhance the electron transport capability of F127 ETL and the performance of the resulting devices was greatly improved.

Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer

We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.

White organic light-emitting diodes based on a combined electromer and monomer emission in doubly-doped polymers

We report on white organic light-emitting diodes （WOLEDs） based on polyvinylcarbazole （PVK） doped with 1,1-bis（（di-4-tolylamino）phenyl）cyclohexane （TAPC） and perylene, and investigate the luminescence mechanism of the devices. The chromaticity of light emission can be tuned by adjusting the concentration of the dopants. White light with the Commission Internationale de L＇Eclairage （CIE） coordinates of （0.33, 0.34） is achieved by mixing the yellow electromer emission of TAPC and the blue monomer emission of perylene from the device ITO/PVK： TAPC： perylene （100：9：1 in wt.） （100 nm）/tris-（8-hydroxyquinoline aluminum （Alq3） （10 nm）/A1. The device exhibits a maximal luminance of 3727 cd/m2 and a current efficiency of 2 cd/A.

Stability study of saturated red polymer light-emitting diodes

Saturated red polymer light-emitting diodes have been fabricated with a single emitting polymer blend layer of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene] (MEH-PPV) and poly[9,9-dioc- tylfluorene-co-4,7-di-2-thienyl-2,1,3-benzothiadiazole] (PFO-DBT15). Saturated red emission with the Commission Internationale de l’Eclairage (CIE) coordinates of (0.67, 0.33) was obtained. The device stability was investigated. The results showed that energy transfer occurred from MEH-PPV to PFO-DBT15, and MEH-PPV improved the hole injection and transportation.

Efficient polymer light-emitting diodes with violet blue emission based on blends of PSiF6-PPP and PSiFC6C6

有效聚合物有紫蓝排放的轻射出的二极管(PLEDs ) 用 paraphenylene-co-silafluorene (PSiF6-PPP ) 和聚合物的共聚物的混合被制作 poly (9,9''-alkyl-3,6-silafluorene )(PSiFC6C6 ) 。设备的表演对混合比率敏感。当到 PS1FC6C6 的 PS1F6-PPP 的集体比率是 1 时：3，最高的外部量效率在 105 cd-m~ 的发光性是 1.96%(-2), 它的电镀物品光(EL ) 光谱在 398 nm 达到顶点，在半最大值的完整的宽度是 67 nm。设备表演的改进由于从 PSiFC6C6 的精力转移到 PS1F6-PPP 和电子和洞的平衡注射。

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

Impedance spectroscopy for quantum dot light-emitting diodes

Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.