Design of Down Scalers in Mixed-Signal GHz Frequency Synthesizer

An optimized method is presented to design the down scalers in a GHz frequency synthesizer. The down scalers are comprised of dual modulus prescaler （DMP） and programmable ＆ pulse swallow divider,different methods of high frequency analog circuit and digital logical synthesis are adopted respectively. Using a DMP high speed, lower jitter and lower power dissipation are obtained,and output frequency of 133.0MHz of the DMP working at divide-by-8 shows an RMS jitter less than 2ps. The flexibility and reusability of the progrs, mmable divider is high;its use could be extended to many complicated frequency synthesizers. By comparison,it is a better design on performance of high-frequency circuit and good design flexibility.

A 2.4GHz Quadrature Output Frequency Synthesizer

A design and implementation for a 2.4GHz quadrature output frequency synthesizer intended for bluetooth in 0. 35μm CMOS technology are presented. A differentially controlled quadrature voltage-controlled oscillator （QVCO） is employed to generate quadrature （I/Q） signals. A second-order loop filter, with a unit gain transconductance amplifier having the performance of a third-order loop filter,is exploited for low cost. The measured spot phase noise is -106.15dBc/Hz@ 1MHz. Close-in phase noise is less than -70dBc/Hz. The synthesizer consumes 13.5mA under a 3.3V voltage supply. The core size is 1.3mm×0. 8mm.

A CMOS Fully Integrated Frequency Synthesizer with Stability Compensation

A complete closed-loop third order s-domain model is analyzed for a frequency synthesizer. Based on the model and root-locus technique, the procedure for parameters design is described, and the relationship between the process,voltage,and temperature variation of parameters and the loop stability is quantitatively analyzed. A variation margin is proposed for stability compensation. Furthermore,a simple adjustable current cell in the charge pump is proposed for additional stability compensation and a novel VCO with linear gain is adopted to limit the total variation. A fully integrated frequency synthesizer from 1 to 1.05GHz with 250kHz channel resolution is implemented to verify the methods.

Frequency synthesizer for DRM/DAB/AM/FM RF front-end

This paper describes a wideband low phase noise frequency synthesizer.It operates in the multi-band including digital radio mondiale DRM digital audio broadcasting DAB amplitude modulation AM and frequency modulation FM .In order to cover the signals of the overall frequencies a novel frequency planning and a new structure are proposed. A wide-band low-phase-noise low-power voltage-control oscillator VCO and a high speed wide band high frequency division ratio pulse swallow frequency divider with a low power consumption are presented.The monolithic DRM/DAB/AM/FM frequency synthesizer chip is also fabricated in a SMIC＇s 0.18-μm CMOS process.The die area is 1 425 μm ×795 μm including the test buffer and pads. The measured results show that the VCO operating frequency range is from 2.22 to 3.57 GHz the measured phase noise of the VCO is 120.22 dBc/Hz at 1 MHz offset the pulse swallow frequency divider operation frequency is from 0.9 to 3.4 GHz.The phase noise in the phase-locked loop PLL is-59.52 dBc/Hz at 10 kHz offset and fits for the demand of the DRM/DAB/AM/FM RF front-end. The proposed frequency synthesizer consumes 47 mW including test buffer under a 1.8 V supply.

Key technologies of frequency-hopping frequency synthesizer for Bluetooth RF front-end

A scheme of a frequency-hopping frequency-synthesizer applied to a Bluetooth ratio frequency （RF） front-end is presented,and design of a voltage controlled oscillator （VCO） and dual-modulus prescaler are focused on.It is fabricated in a 0.18 μm mixed-signal CMOS （complementary metal-oxide-semiconductor transistor） process.The power dissipation of VCO is low and a stable performance is gained.The measured phase noise of VCO at 2.4 GHz is less than -114.32 dBc/Hz.The structure of the DMP is optimized and a novel D-latch integrated with ＂OR＂ logic gate is used.The measured results show that the chip can work well under a 1.8 V power supply.The power dissipation of the core part in a dual modulus prescaler is only 5.76 mW.An RMS jitter of 2 ps is measured on the output signal at 118.3 MHz.It is less than 0.02% of the clock period.

Survey of Radiosensitizing Agents (Synthesized Chemicals and Gene Therapeutic Agents) Since 2000

Radiotherapy has played an important role in treatment of tumor patientssince it appeared about 80 years ago, and has been an indispensable part of the management of about50% of tumors (especially 60% - 70% of malignant tumors). Currently, radiotherapy is used in simpleand palliative therapy, adjuvant therapy after or before surgery, simultaneous radio-chemotherapy,combined BRM (biological response modifier) therapy, ets. Radiosensitizing agents enhance theradiation effects on tumor cells so as to have better responses in radiotherapy. Tumor intrinsicradiosensitivity is affected by the hy-poxic level in solid tumor, the ability of the cells torepair the radiation-induced DNA damage, the number of cells which have a clonogenic capability toreestablish uncontrolled cell growth, the amount of dividing cells, and the distribution of cellsthroughout the cell cycle. Consequently , it is necessary and useful to add one or moreradiosensitizing agents in radiotherapy to increase the radio-sensitivity of tumor cells.

A wideband low-phase-noise LC VCO for DRM/DAB frequency synthesizer

The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.

A Novel Method to Compensate the Sigma-Delta Shaped Noise for Wide Band Fractional-N Frequency Synthesizers

A novel method to partially compensate sigma-delta shaped noise is proposed. By injecting the compensation current into the passive loop filter during the delay time of the phase frequency detector（PFD）,a maximum reduction of the phase noise by about 16dB can be achieved. Compared to other compensation methods,the technique proposed here is relatively simple and easy to implement. Key building blocks for realizing the noise cancellation,including the delay variable PFD and compensation current source, are specially designed. Both the behavior level and circuit level simulation results are presented.

A Σ-Δ Fractional-N PLL Frequency Synthesizer with AFC for SRD Applications

A fractional-N frequency synthesizer for 433/868MHz SRD applications is implemented in a 0.3μm CMOS process. A wide-band VCO and an AFC are used to cover the desired bands. A 3bit third order sigma-delta modulator is adopted to reduce the out-band phase noise. The measurements show a VCO tuning range from 1.31 to 1.88GHz with AFC working correctly,an out-band phase noise of -139dBc/Hz at 3MHz offset frequency, and a fractional spur of less than - 60dBc. The chip area is 1.5mm × 1.2mm and the total current dissipation including LO buffers is 19mA from a single 3.0V supply voltage.

Digital Coarse Tuning Loop for Wide-Band Fast-Settling Dual-Loop Frequency Synthesizers

A new coarse tuning loop for a wide-band dual-loop frequency synthesizer is presented. The coarse tuning structure is composed of two digital modules, including a successive approximation register and a frequency comparator with a novel structure. The frequency comparator counts the prescaler cycles within a certain reference time and compares the number with preset data to estimate the VCO frequency. The frequency comparison error is analyzed in detail. Within a given coarse tuning time,our proposed structure shows a comparison error 20 times smaller than that of other reported structures. This structure also reuses the programmable divider as a part of the coarse tuning loop so that the circuit is greatly simplified.

Antibacterial screening of silver nanoparticles synthesized by marine micro algae

Objective:To explore the biosynthesis of silver nanoparticles synthesized by marine microalgae. Methods:Marine microalgae was collected from Central Marine Fisheries Research Institute (CMFRI,tuticorin) and cultured in the lab.Silver nanoparticles synthesis were observed in normal and microwave irradiated microalgae and screened against human pathogens for the presence of antimicrobials.Results:The presence of silver nanoparticle was confirmed by UV-Visible spectroscopy at 420 nm by the presence of plasmon peak.Further confirmation was done by scanning electron microscope(SEM).Conclusions:These results not only provide a base for further research but are useful for drug development in the present and future.

A 1-GHz Charge Pump PLL Frequency Synthesizer for IEEE 1394b PHY

The design procedure of an 1-GHz phase-locked loop （PLL）-based frequency synthesizer used in IEEE 1394b physical （PHY） system is presented in this paper. The PLL＇s loop dynamics are analyzed in depth and theoretical relationships between all loop parameters are clearly described. All the parameters are derived and verified by Verilog-A model, which ensures the accuracy and efficiency of the circuit design and simulation. A 4-stage ring oscillator is employed to generate 1-GHz oscillation frequency and is divided into low frequency clocks by a feedback divider. The architecture is a third-order, type-2 charge pump PLL. The simulated settling time is less than 4μs. The RMS value of period jitter of the PLL＇s output is 2.1 ps. The PLL core occupies an area of 0.12 mm2, one fourth of which is occupied by the MiM loop capacitors. The total current consumption of the chip is 16.5 mA. The chip has been sent for fabrication in 0.13 μm complementary metal oxide semiconductor （CMOS） technology.

TOUGHENING OF IN SITU SYNTHESIZED MoSi_2-SiC COMPOSITE AT ROOM TEMPERATURE

The in situ synthesized MoSi2-SiC composite is proved to be of higher fracture toughness than the monolithic MoSi2. The TEM and HREM study reveals that the interface between MoSi2/SiC is of direct atomic bonding without any amorphous glassy phase, such the SiO2 structure. Based on the fractography and the observation of crack propagation path from indentation, it is concluded that the toughening of such composite at room temperature can be attributed to the high interfacial binding energy, the refinement of the MoSi2 matrix and the deflection and bridging behavior in the crack propagation.

Use of the Newly Synthesized Aqueous Polyurethane Acrylate Binders for Printing Cotton and Polyester Fabrics

The use of the four new synthesized polyurethane acrylate binders in the pigment print paste for screen printing cotton and polyester fabrics and pigment fixation through the polymerization process of the binder by using the thermofixation technique as well as the UV curing technique was studied. The effect of changing time and temperature of thermofixation, and the time of UV curing on the color strength, and prints fastness properties were also studied. The results showed that, the newly synthesized polyurethane acrylate binders could be successfully used for pigment fixation on cotton and polyester using the two fixation techniques and in general their prints possessed better color strength values as compared to those obtained upon using the selected commercial binders.

B-C Bond in Diamond Single Crystal Synthesized with h-BN Additive at High Pressure and High Temperature

The synthesis of diamond single crystal in the Fe64Ni36-C system with h-BN additive is investigated at pressure 6.5 GPa and temperature range of 1300-1400℃. The color of the obtained diamond crystals translates from yellow to dark green with increasing the h-BN addition. Fourier-transform infrared （FTIR） results indicate that sp2 hybridization B-N-B and B-N structures generate when the additive content reaches a certain value in the system. The two peaks are located at 745 and 1425cm-1, respectively. Fhrthermore, the FTIR characteristic peak resulting from nitrogen pairs is noticed and it tends to vanish when the h-BN addition reaches 1.1 wt%. Furthermore, Raman peak of the synthesized diamond shifts down to a lower wavenumber with increasing the h-BN ~ddition content in the synthesis system.

Optimization of Gas Sensing Performance of Nanocrystalline SnO_2 Thin Films Synthesized by Magnetron Sputtering

Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures.

Nano-composite Particles Synthesized by a Hydrogen Arc Plasma

Nano-composite particles can be synthesized by a hydrogen arc plasma method, which possesses the advantages of high productivity, controllable size distribution and low electric energy consumption comparing with conventional gas condensation method. With this method, not only the nanoparticles of metals and alloys, but also the nano-composite particles with shell structure can be synthesized. The microstructures, compositions and the formation mechanism of the nano composite particles were studied

Structure of the Intermetallic Compound Ni_3Al Synthesized under Compression of the Powder Mixture of Pure Elements Part Ⅰ: Phase Composition and Microstructure of Main Phase

It was shown by TEM and X-ray analysis that there are four types of grains of the main Ni3Al phase in the structure of the intermetallic obtained by the self-propagation high temperature method (SHS). Every type of grains has its own domain and dislocation structure. There are mono- and polydomains with and without dislocations. The grains of the main phase of monoand polydomains without dislocations and polydomains with dislocations were formed by diffusion in the solid phase. In these conditions NiAl3 phase is located on the grain boundary of the main phase. The Ni2Al3 phase is located at the triple joints of the main phase.

Structure of the Intermetallic Compound Ni_3Al Synthesized under Compression of the Powder Mixture of Pure Elements Part Ⅱ: Influence of Alloying by Boron on the Phase Composition and the Microstructure of Grains of the Main Phase

The Ni_3B phase was formed when boron (0.5 at. pct B) was added to the intermetallic of sto- ichiometric and off-stoichiometric (Ni-24 at. pct Al) compounds. In the alloy of stoichiometric composition the particles of Ni_3B phase has the size around 0.1μm and is located on the grain boundary of the main phase. The decreasing of concentrations of Al in the ofF-stoichiometric alloy leads to increase in the degree of the long-range order parameter, increasing the concen- trations of boron in the solid solution and decreasing its localization on the grain boundary. Microalloying of boron leads to increasing in the fraction of grain monodomains with disloca- tions up to 0.7 in the alloy of the off-stoichiometric composition and up to 1 in the alloy of the stoichiometric composition. It was established the correlation between the degree of the concentration inhomogeneity, average density of the dislocations and the average long range-order parameter.

Structure and Tribological Property of TiBN Nanocomposite Multilayer Synthesized by Ti-BN Composite Cathode Plasma Immersion Ion Implantation and Deposition

A Ti-BN complex cathode is made from Ti and h-BN powders by the powder metallurgy technology, and TiBN coating is obtained by plasma immersion ion implantation and deposition with this Ti-BN composite cathode. The TiBN coating shows a self-forming multilayered nanocomposite structure while with relative uniform elemental distributions. High resolution transmission electron microscopy images reveal that the multilayered structure is derived from different grain sizes in the nanocomposite. Due to the existence of h-BN phase, the friction coefficient of the coating is about 0.25.