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Peak Power Effect on Skin Rejuvenation Using IPL: Lumecca IPL Evaluation 被引量:1
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作者 E. V. Ross Michael Kreindel 《Advances in Aging Research》 2016年第3期78-82,共5页
A high peak power IPL system (Lumecca) was tested to determine the correlation between a high peak power and the successful treatment of pigmented and vascular lesions. Short pulse duration in the millisecond range an... A high peak power IPL system (Lumecca) was tested to determine the correlation between a high peak power and the successful treatment of pigmented and vascular lesions. Short pulse duration in the millisecond range and high peak power of 3.3 kW/cm<sup>2</sup> enabled selective and effective destruction, not only of pigment, but also of vessels in a comparable manner to a pulsed dye laser. Only one treatment session at a low fluence (8 - 16 J/cm<sup>2</sup>) was sufficient to achieve the desired results. 展开更多
关键词 Intense Pulsed Light Peak power effect Skin Rejuvenation
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Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave 被引量:5
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作者 刘阳 柴常春 +2 位作者 杨银堂 孙静 李志鹏 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第4期461-466,共6页
In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigati... In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model. 展开更多
关键词 low noise amplifier HEMT high power microwave damage effect
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Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves 被引量:4
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作者 Hui Li Chang-Chun Chai +2 位作者 Yu-Qian Liu Han Wu in-Tang Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第8期633-639,共7页
A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of ... A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves (HPM) is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result. 展开更多
关键词 monolithic composite transistor high-power microwaves damage effects pulse-width effects
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Aerodynamic Characteristics,Power Requirements and Camber Effects of the Pitching-Down Flapping Hovering 被引量:4
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作者 Peng Bai,Er-jie Cui,Hui-ling ZhanChina Academy of Aerospace Aerodynamics,Beijing 100074,P.R.China 《Journal of Bionic Engineering》 SCIE EI CSCD 2009年第2期120-134,共15页
The pitching-down flapping is a new type of bionic flapping,which was invented by the author based on previous studies on the aerodynamic mechanisms of fruit fly(pitching-up)flapping.The motivation of this invention i... The pitching-down flapping is a new type of bionic flapping,which was invented by the author based on previous studies on the aerodynamic mechanisms of fruit fly(pitching-up)flapping.The motivation of this invention is to improve the aerodynamic characteristics of flapping Micro Air Vehicles(MAVs).In this paper the pitching-down flapping is briefly introduced.The major works include:(1)Computing the power requirements of pitching-down flapping in three modes(advanced,symmetrical, delayed),which were compared with those of pitching-up flapping;(2)Investigating the effects of translational acceleration time,Δτ_t,and rotational time,Δτ_r,at the end of a stroke,and the angle of attack,α,in the middle of a stroke on the aerodynamic characteristics in symmetrical mode;(3)Investigating the effect of camber on pitching-down flapping.From the above works, conclusions can be drawn that:(1)Compared with the pitching-up flapping,the pitching-down flapping can greatly reduce the time-averaged power requirements;(2)The increase in Δτt and the decrease in Δτ_r can increase both the lift and drag coefficients, but the time-averaged ratio of lift to drag changes a little.And α has significant effect on the aerodynamic characteristics of the pitching-down flapping;(3)The positive camber can effectively increase the lift coefficient and the ratio of lift to drag. 展开更多
关键词 aerodynamic characteristics flapping wing power requirements camber effect pitching-down-flapping MAVS
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Numerical Analysis of Magnetic-Shielding Effectiveness for Magnetic Resonant Wireless Power Transfer System 被引量:1
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作者 卢伟国 李惠荣 +1 位作者 陈伟铭 刘黎辉 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第8期148-151,共4页
Magnetic radiation phenomena appear inevitably in the magnetic-resonance wireless power transfer (MR-WPT) system, and regarding this problem the magnetic-shielding scheme is applied to improve the electromagnetic pe... Magnetic radiation phenomena appear inevitably in the magnetic-resonance wireless power transfer (MR-WPT) system, and regarding this problem the magnetic-shielding scheme is applied to improve the electromagnetic performance in engineering. In this study, the shielding effectiveness of a two-coil MR-WPT system for different material shields is analyzed in theory using Moser's formula and Schelkunoff's formula. On this basis a candidate magnetic-shielding scheme with a double-layer structure is determined, which has better shielding effectiveness and coils coupling coefficient. Finally, some finite element simulation results validate the correctness of the theoretical analysis, and the shielding effectiveness with the double-layer shield in maximum is 30?dB larger than the one with the single-layer case. 展开更多
关键词 MR WPT Numerical Analysis of Magnetic-Shielding effectiveness for Magnetic Resonant Wireless power Transfer System
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Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material 被引量:5
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作者 Hang Dong Huiwen Xue +4 位作者 Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu 《Journal of Semiconductors》 EI CAS CSCD 2019年第1期17-25,共9页
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and l... As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed. 展开更多
关键词 gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET)
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Wavelet network based predistortion method for wideband RF power amplifiers exhibiting memory effects 被引量:1
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作者 JIN Zhe SONG Zhi-huan HE Jia-ming 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2007年第4期625-630,共6页
RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryl... RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth. 展开更多
关键词 power amplifiers. Predistortion. Memory effects. Wavelet networks
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Effects of Low-Power Microwave Fields on Seed Germination and Growth Rate 被引量:1
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作者 Lakshmappa Ragha Seema Mishra +1 位作者 V. Ramachandran Manmohan Singh Bhatia 《Journal of Electromagnetic Analysis and Applications》 2011年第5期165-171,共7页
Experiments were conducted to investigate the effects of low power microwave radiation on germination and growth rate in seeds. In the present paper, the bioeffects of low power (non-thermal intensity) microwave modul... Experiments were conducted to investigate the effects of low power microwave radiation on germination and growth rate in seeds. In the present paper, the bioeffects of low power (non-thermal intensity) microwave modulated with 1 KHz square wave have been studied. Experiments were performed in X-band frequencies using klystron based microwave test bench. Microwave parameters like frequency, power, exposure time and power density were varied while irradiating seed samples to study their influence on germination. The seed samples used for the experiment included wheat (Triticum aestivum), bengal gram (Cicer arietinum), green gram (Vigna radiate) and moth bean (Vigna Aconitifolia). Seed germination %, plant height, root length and dry matter % (biomass %) were recorded and compared with control seeds. The effects of different treatments were found to be stimulating the germination and seedling vigour of plants especially in power and exposure time treatments while increase in frequency and power density has reduced the seed germination and seedling vigour. The effect also varied with the nature of seeds. 展开更多
关键词 Irradiated Seeds Seed GERMINATION % Low power MICROWAVE effectS Exposure Time power power Density X-Band Frequencies MICROWAVE Test BENCH
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Potential Power of the Pyramidal Structure III: Discovery of Pyramid Effects with and without Seasonal Variation 被引量:4
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作者 Osamu Takagi Masamichi Sakamoto +2 位作者 Hideo Yoichi Kimiko Kawano Mikio Yamamoto 《Natural Science》 2020年第12期743-753,共11页
Since October 2007, we have been conducting rigorous scientific research on the unexplained “power” of a pyramidal structure (PS). From our research results so far, we could classify the pyramid effects by the PS in... Since October 2007, we have been conducting rigorous scientific research on the unexplained “power” of a pyramidal structure (PS). From our research results so far, we could classify the pyramid effects by the PS into the following two types. (i) The pyramid effects in which the PS converted the test subject’s unexplained energy to affect biosensors when the test subject entered the PS and meditated. (ii) The pyramid effects in which the potential power of the PS affect</span><span style="font-family:Verdana;">ed</span><span style="font-family:Verdana;"> biosensors if the test subject ha</span><span style="font-family:Verdana;">d</span><span style="font-family:Verdana;"> not been inside the PS for at least 20 days and the test subject’s unexplained energy was excluded. In this paper, we report new results regarding (ii). As a result of dividing a year according to the four seasons of winter, spring, summer, and autumn and analyzing the pyramid effect of each period, the following points were found. 1) There was a pyramid effect without seasonal variation. The pyramid effect on the lower and upper layers was different throughout the year for the biosensors placed at the PS apex in two layers, regardless of the season. 2) There was a pyramid effect with seasonal variation. The value of the psi index, which indicates the magnitude of the pyramid effect, changed as the seasons changed, while different pyramid effects were maintained on the lower and upper layers. Regarding the change in the pyramid effect depending on the season, the psi index in summer was larger than that in winter in both the lower and upper layers. From these results, we found that there are two types of potential power at the PS apex: seasonal potential power and non-seasonal potential power. 展开更多
关键词 PYRAMID Potential power MEDITATION Non-Contact effect Seasonal Variation Biosensor Cucumis sativus Gas Psi Index
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Volterra series based predistortion for broadband RF power amplifiers with memory effects
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作者 Jin Zhe Song Zhihuan He Jiaming 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 2008年第4期666-671,共6页
RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, an... RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. However, in broadband communication systems, such as WCDMA, the PA memory effects are significant, and memoryless predistortion cannot linearize the PAs effectively. After analyzing the PA memory effects, a novel predistortion method based on the simplified Volterra series is proposed to linearize broadband RF PAs with memory effects. The indirect learning architecture is adopted to design the predistortion scheme and the reeursive least squares algorithm with forgetting factor is applied to identify the parameters of the predistorter. Simulation results show that the proposed predistortion method can compensate the nonlinear distortion and memory effects of broadband RF PAs effectively. 展开更多
关键词 power amplifiers PREDISTORTION memory effects Volterra series
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Speed up the Retrofit of Thermal Power Generating Units, Raise the Effectiveness of Power Plant Comprehensively
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作者 Jiang Zhesheng 《Electricity》 2000年第1期13-16,共4页
关键词 Speed up the Retrofit of Thermal power Generating Units Raise the effectiveness of power Plant Comprehensively
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The effects of radiation damage on power VDMOS devices with composite SiO_2-Si_3N_4 films 被引量:1
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作者 高博 刘刚 +5 位作者 王立新 韩郑生 宋李梅 张彦飞 腾瑞 吴海舟 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第3期393-398,共6页
Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor(VDMOS) devices with composite SiO2-Si3N4 film gates are investigated.The relationships amon... Total dose effects and single event effects on radiation-hardened power vertical double-diffusion metal oxide semiconductor(VDMOS) devices with composite SiO2-Si3N4 film gates are investigated.The relationships among the important electrical parameters of the samples with different thickness SiO2-Si3N4 films,such as threshold voltage,breakdown voltage,and on-state resistance in accumulated dose,are discussed.The total dose experiment results show that the breakdown voltage and the on-state resistance barely change with the accumulated dose.However,the relationships between the threshold voltages of the samples and the accumulated dose are more complex,and not only positively drift,but also negatively drift.At the end of the total dose experiment,we select the group of samples which have the smaller threshold voltage shift to carry out the single event effect studies.We find that the samples with appropriate thickness ratio SiO2-Si3N4 films have a good radiation-hardening ability.This method may be useful in solving both the SEGR and the total dose problems with the composite SiO2-Si3N4 films. 展开更多
关键词 power VDMOS device total dose effects single event effects composite SiO2-Si3N4 films
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Pruned Volterra Models with Memory Effects for Nonlinear Power Amplifiers 被引量:1
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作者 Pengpeng Li Qingfang Zhang +2 位作者 Ping Wang Zhongshan Xie Bing Liu 《Communications and Network》 2013年第3期570-572,共3页
In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of ... In this letter, a novel model is proposed for modeling the nonlinearity and memory effects of power amplifiers. The classical Volterra model is modified through a function of the sum of nonlinearity order with sum of memory length. The parameters of this model can be extracted in digital domain since the model is analyzed based on the envelope signals. The model we proposed enables a substantial reduction in the number of coefficients involved, and with excellent accuracy. 展开更多
关键词 VOLTERRA SERIES power AMPLIFIER (PA) BEHAVIORAL Model MEMORY effect
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Error induced by the estimation of the corneal power and the effective lens position with a rotationally asymmetric refractive multifocal intraocular lens 被引量:1
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作者 David P.Piero Vicente J.Camps +2 位作者 María L.Ramón Verónica Mateo Rafael J.Pérez-Cambrodí 《International Journal of Ophthalmology(English edition)》 SCIE CAS 2015年第3期501-507,共7页
AIM : To evaluate the prediction error in intraocular lens(IOL) power calculation for a rotationally asymmetric refractive multifocal IOL and the impact on this error of the optimization of the keratometric estimation... AIM : To evaluate the prediction error in intraocular lens(IOL) power calculation for a rotationally asymmetric refractive multifocal IOL and the impact on this error of the optimization of the keratometric estimation of the corneal power and the prediction of the effective lens position(ELP).METHODS: Retrospective study including a total of 25 eyes of 13 patients(age, 50 to 83y) with previous cataract surgery with implantation of the Lentis Mplus LS-312 IOL(Oculentis Gmb H, Germany). In all cases, an adjusted IOL power(P IOLadj) was calculated based on Gaussian optics using a variable keratometric index value(n kadj) for the estimation of the corneal power(P kadj) and on a new value for ELP(ELP adj) obtained by multiple regression analysis.This P IOLadj was compared with the IOL power implanted(P IOLReal) and the value proposed by three conventional formulas(Haigis, Hoffer Q and Holladay Ⅰ).RESULTS: P IOLReal was not significantly different than P IOLadj and Holladay IOL power(P 】0.05). In the Bland and Altman analysis, P IOLadj showed lower mean difference(-0.07 D) and limits of agreement(of 1.47 and-1.61 D)when compared to P IOLReal than the IOL power value obtained with the Holladay formula. Furthermore, ELP adj was significantly lower than ELP calculated with other conventional formulas(P 【0.01) and was found to be dependent on axial length, anterior chamber depth and P kadj. CONCLUSION: Refractive outcomes after cataract surgery with implantation of the multifocal IOL Lentis Mplus LS-312 can be optimized by minimizing thekeratometric error and by estimating ELP using a mathematical expression dependent on anatomical factors. 展开更多
关键词 Mplus multifocalintraocularlens KERATOMETRY effective lens position intraocular lens power
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Potential Power of the Pyramidal Structure IV: Discovery of Entanglement Due to Pyramid Effects 被引量:4
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作者 Osamu Takagi Masamichi Sakamoto +1 位作者 Kimiko Kawano Mikio Yamamoto 《Natural Science》 2021年第7期258-272,共15页
Since October 2007, we have been conducting rigorous scientific research on the unexplained “power” of a pyramidal structure (PS). From our research results so far, we could classify pyramid effects by the PS into t... Since October 2007, we have been conducting rigorous scientific research on the unexplained “power” of a pyramidal structure (PS). From our research results so far, we could classify pyramid effects by the PS into the following two types: (i) the pyramid effects due to the potential power of the PS and (ii) the pyramid effects due to the influence of the test subject meditating inside the PS. We have been using edible cucumber sections as the biosensors. The pyramid effect existence was clarified by measuring and analyzing the concentration of volatile components released from the biosensors. The biosensors were arranged as a pair: one member of the pair was placed at the PS apex and the other was placed at the calibration control point 8.0 m away from the PS. In this paper, we report a new discovery regarding the type (i) pyramid effects. We discovered a phenomenon considered to be entanglement between the biosensor pairs detecting the pyramid effects. In other words, the biosensors at the PS apex, which were affected by the potential power of the PS, affected the biosensors at the calibration control point. We also confirmed that the effects on the biosensors placed at the calibration control point were not due to the potential power of the PS. Furthermore, we showed that the magnitude of the effect of entanglement changed with the seasons. We expect that our research results will be widely accepted in the future and will become the foundation for a new research field in science, with a wide range of applications. 展开更多
关键词 PYRAMID Potential power ENTANGLEMENT MEDITATION Non-Contact effect Biosensor Cucumis sativus Gas Psi Index
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Degradation of effective carrier-power-to-noise densityratio based on code trackingspectral sensitivitycoefficient for GNSS radio frequencycompatibilityin C band
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作者 刘美红 战兴群 牛满仓 《Journal of Beijing Institute of Technology》 EI CAS 2014年第3期413-419,共7页
The frequency band between 5 010 MHz and 5 030 MHz allocated as C band has been used as a candidate in the global navigation satellite systems (GNSS) along with more and more naviga- tion services in L band. The pot... The frequency band between 5 010 MHz and 5 030 MHz allocated as C band has been used as a candidate in the global navigation satellite systems (GNSS) along with more and more naviga- tion services in L band. The potential benefits and technical requirements of C band for satellite navi- gation have been analyzed before. However the degradation of effective carrier-power-to-noise densi- ty ratio( A (C/No )eu) based on code tracking spectral sensitivity coefficient( CT_SSC ) as a compati- bility assessment methodology for potential GNSS radio frequency compatibility in C-Band has not been discussed clearly. So the compatibility of the signals in the C band between BeiDou (BD) B1 C and GPS L1C, L1C/A, Galileo E1Os as the interoperability or classical signals in L band is analyzed. Simulation results reveal the interference degree between BD III B1C and GPS L1C/A, L1C, Galileo E1OS. The results can also reveal that the multiplexed binary offset carrier (MBOC) and binary phase shift keying (BPSK) modulation is not appropriate for C band. 展开更多
关键词 degradation of effective carrier-power-to-noise density ratio code tracking spectral sen-sitivity coefficient compatibility
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新能源发电系统控制技术研究 被引量:3
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作者 罗宇强 《科技创新与应用》 2024年第1期34-38,共5页
随着经济社会发展,人们用电需求在不断增长,需要将有限的电能资源进行合理利用,找寻新的发电技术和途径,新能源电力技术及控制技术需要得到新的发展。在发电、输电、配电及用电环节中,电力机制发挥着极为重要的作用,能够组建起电能生产... 随着经济社会发展,人们用电需求在不断增长,需要将有限的电能资源进行合理利用,找寻新的发电技术和途径,新能源电力技术及控制技术需要得到新的发展。在发电、输电、配电及用电环节中,电力机制发挥着极为重要的作用,能够组建起电能生产与消费的一体化环节。可以运用发电装置将自然界中的可再生能源转变成为电能,用户可以通过输电系统获得电能,给日常生活提供能量供应。传统发电方式难以大规模存储电能,需要控制电能输出方式。新能源发电与传统发电方式存在较大的差异性,新能源的发电输出功率是可控的。该文主要叙述新能源电力系统运行的基本特点,并说明电力系统的主要控制技术及控制策略,为后续新能源电力工程的顺利发展奠定强有力基础。 展开更多
关键词 新能源发电技术 电力系统 有效策略 新能源 输出方式
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农产品加工企业市场势力与技术创新 被引量:2
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作者 杨丹 曾萤 刘自敏 《统计与信息论坛》 CSSCI 北大核心 2024年第1期87-102,共16页
农产品加工企业创新是乡村产业高质量发展的重要驱动,但鲜有文献从市场势力视角研究农产品加工企业创新激励。为此,基于创新决策模型解释企业市场势力对技术创新的影响及机制,并采用2008—2021年农产品加工业上市公司数据,运用DLW市场... 农产品加工企业创新是乡村产业高质量发展的重要驱动,但鲜有文献从市场势力视角研究农产品加工企业创新激励。为此,基于创新决策模型解释企业市场势力对技术创新的影响及机制,并采用2008—2021年农产品加工业上市公司数据,运用DLW市场势力测度方法,建立动态面板模型进行实证检验。结果显示:第一,市场势力对农产品加工企业技术创新存在显著促进作用,在使用Bartik工具变量和2SLS方法处理内生性后,该促进作用依然显著;第二,市场势力通过溢价效应和成本效应等机制共同推动农产品加工企业技术创新;第三,市场势力对技术创新的促进作用随着城市交通便利度、企业产权属性等不同呈现出异质性特征。需要从培育领军企业、加强交通基础设施建设、发挥国有企业创新引领作用等方面制定相关政策,以促进农产品加工企业创新,从而助推乡村产业高质量发展。 展开更多
关键词 市场势力 技术创新 溢价效应 成本效应 Bartik IV
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Study of the Effect of Using Power Point in an English Class
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作者 沈艺 《海外英语》 2015年第15期233-234,共2页
This action research aims to work out whether the effect of using powerpoint in an English class is positive or not.This research is carried out through the researcher’s lessons to a class of 45 students,experienced ... This action research aims to work out whether the effect of using powerpoint in an English class is positive or not.This research is carried out through the researcher’s lessons to a class of 45 students,experienced teachers and a philosophy teacher after previous meeting with the researcher are invited to observe the lessons with observation forms,questionnaires are completed by the students in the class and after class discussions.The conclusion from this action research is that in the context of the time and place when research is made,the Effect of Using Power Point in an English class is positive. 展开更多
关键词 effect ENGLISH TEACHING ENGLISH CLASS power POINT
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Effect of Hot Carrier on Amplitude Modulation and Demodulation of Gaussian High Power Helicon Wave in Homogeneous Longitudinally Magnetized Strain Dependent Dielectric Material
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作者 Shivani Saxena Sanjay Dixit Sanjay Srivastava 《Open Journal of Acoustics》 2015年第4期139-152,共14页
In the present communication, the hydrodynamic model is used to investigate the amplitude modulation as well as demodulation of an electromagnetic wave of high power helicon pump wave into another helicon wave in stra... In the present communication, the hydrodynamic model is used to investigate the amplitude modulation as well as demodulation of an electromagnetic wave of high power helicon pump wave into another helicon wave in strain dependent dielectric material incorporating carrier heating (CH) effects. The consideration of CH in modulation and demodulation is prime importance for the adding of new dimension in analysis of amplification of acoustic helicon wave. By using the dispersion relation, threshold pump electric filed and growth rate of unstable mode from the modulation and demodulation of the high power helicon wave well above from the threshold value will be discussed in the present analysis. The numerical analysis is applied to a strain dependent dielectric material, BaTiO3 at room temperature and irradiated with high power helicon wave of frequency 1.78 × 1014 Hz. This material is very sensitive to the pump intensities, therefore during studies, Gaussian shape of the helicon pump wave is considered during the propagation in stain dependent dielectric material and opto-acoustic wave in the form of Gaussian profile (ω0,κ0) is induced longitudinally along the crystallographic plane of BaTiO3. Its variation is caused by the available magnetic field (ωc), interaction length (z) and pulsed duration of interaction (τ). From the analysis of numerical results, the incorporation of CH effect can effectively modify the magnitude of modulation or demodulation of the amplitude of high power helicon laser wave through diffusion process. Not only the amplitude modulation and demodulation of the wave, the diffusion of the CH effectively modifies the growth rate of unstable mode of frequency in BaTiO3. The propagation of the threshold electric field shows the sinusoidal or complete Gaussian profile, whereas this profile is found to be completely lost in growth of unstable mode. It has also been seen that the growth rate is observed to be of the order of 108 - 1010 s-1 but from diffusion of carrier heating, and that its order is enhanced from 1010 - 1012 s-1 with the variation of the magnetized frequency from 1 to 2.5 × 1014 Hz. 展开更多
关键词 Amplitude/Frequency Modulation High power Laser WAVE Hot Carrier effect Plasma effect in STRAIN DEPENDENT Dielectric Material
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