期刊文献+
共找到944篇文章
< 1 2 48 >
每页显示 20 50 100
Overview of High Voltage SiC Power Semiconductor Devices: Development and Application 被引量:16
1
作者 Shiqi Ji Zheyu Zhang Fred(Fei)Wang 《CES Transactions on Electrical Machines and Systems》 2017年第3期254-264,共11页
Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC d... Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC devices are presented.The technologies and challenges for HV SiC device application in converter design are discussed.The state-of-the-art applications of HV SiC devices are also reviewed. 展开更多
关键词 High voltage SiC power semiconductor devices SiC-based converter
下载PDF
Physics of Power Semiconductor Streamer Laser
2
作者 Valentin V. Parashchuk 《Journal of Physical Science and Application》 2014年第6期398-402,共5页
It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of th... It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal. 展开更多
关键词 power semiconductor lasers pumping by streamer discharge effect of light auto-channelling (self-trapping) n2 0 and n4〈 0 nonlinearity combined n2 n4 effect symmetry of crystallographic directions system of streamer discharges.
下载PDF
A High Power Semiconductor Switch RSD for Pulsed Power Applications
3
作者 周郁明 余岳辉 +1 位作者 陈海刚 梁琳 《Plasma Science and Technology》 SCIE EI CAS CSCD 2007年第5期622-625,共4页
High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch... High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer. 展开更多
关键词 pulsed power semiconductor switch RSD trigger charge saturable transformer
下载PDF
Analysis and Design Aspects of a Series Power Semiconductor Array with Digital Waveform Control Capability for Single Phase AC Voltage Regulators and Other Applications
4
作者 Nihal Kularatna Chandani Jindasa 《Circuits and Systems》 2011年第3期249-259,共11页
A series connected power semiconductor array, with digital control capability could be used for developing single phase AC regulators or other applications such as AC electronic loads. This technique together with an ... A series connected power semiconductor array, with digital control capability could be used for developing single phase AC regulators or other applications such as AC electronic loads. This technique together with an ordinary gapless transformer could be used to develop a low cost AC voltage regulator (AVR) to provide better or comparable specifications with bulky ferro-resonant AVR types. One primary advantage of the technique is that digital control can be used to minimize harmonics. Commencing with a review of AC voltage regulator techniques for single phase power conditioning systems, an analysis and design aspects of this technique is presented with experimental results for AVRs. Guidelines on how to utilize the technique in a generalized basis is also summarized together with a summary of a technique for achieving harmonic control. 展开更多
关键词 power Conditioners AC Voltage REGULATORS (AVR) power semiconductorS Digital Control Electronic AC Loads
下载PDF
Recent developments in superjunction power devices
5
作者 Chao Ma Weizhong Chen +2 位作者 Teng Liu Wentong Zhang Bo Zhang 《Journal of Semiconductors》 EI CAS CSCD 2024年第11期18-35,共18页
Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks ... Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_(B)in conventional devices.This results in a reduction of the trade-off relationship between specific on-resistance R_(on,sp)and V_(B)from the conventional R_(on,sp)∝V_(B)^(2.5)to R_(on,sp)∝W·V_(B)^(1.32),and even to R_(on,sp)∝W·V_(B)^(1.03).As the exponential term coefficient decreases,R_(on,sp)decreases with the cell width W,exhibiting a development pattern reminiscent of"Moore's Law".This paper provides an overview of the latest research developments in SJ power semiconductor devices.Firstly,it introduces the minimum specific on-resistance R_(on,min)theory of SJ devices,along with its combination with special effects like 3-D depletion and tunneling,discussing the development of R_(on,min)theory in the wide bandgap SJ field.Subsequently,it discusses the latest advancements in silicon-based and wide bandgap SJ power devices.Finally,it introduces the homogenization field(HOF)and high-K voltage-sustaining layers derived from the concept of SJ charge balance.SJ has made significant progress in device performance,reliability,and integration,and in the future,it will continue to evolve through deeper integration with different materials,processes,and packaging technologies,enhancing the overall performance of semiconductor power devices. 展开更多
关键词 super junction silicon limit power semiconductor device design theory
下载PDF
Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material 被引量:5
6
作者 Hang Dong Huiwen Xue +4 位作者 Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu 《Journal of Semiconductors》 EI CAS CSCD 2019年第1期17-25,共9页
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and l... As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed. 展开更多
关键词 gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET)
下载PDF
New Power Semiconductor Devices for Future Generations of Power Supplies
7
作者 Leo Lorenz 《电源世界》 2008年第1期21-27,共7页
Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance di... Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance discussed.Future directions of the major power semiconductor devices like the IGBT,Super Junction technology and SiC device will be explained. 展开更多
关键词 半导体器件 电源 高电压金属氧化物半导体场效应晶体管 碳化硅
原文传递
High wall-plug efficiency 808-nm laser diodes with a power up to 30.1 W 被引量:4
8
作者 Zhanqiang Ren Qingmin Li +1 位作者 Bo Li Kechang Song 《Journal of Semiconductors》 EI CAS CSCD 2020年第3期59-61,共3页
A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivat... A very highly efficient InGaAlAs/AlGaAs quantum-well structure was designed for 808 nm emission,and laser diode chips 390-μm-wide aperture and 2-mm-long cavity length were fabricated.Special pretreatment and passivation for the chip facets were performed to achieve improved reliability performance.The laser chips were p-side-down mounted on the AlN submount,and then tested at continuous wave(CW)operation with the heat-sink temperature setting to 25℃using a thermoelectric cooler(TEC).As high as 60.5%of the wall-plug efficiency(WPE)was achieved at the injection current of 11 A.The maximum output power of 30.1 W was obtained at 29.5 A when the TEC temperature was set to 12°C.Accelerated life-time test showed that the laser diodes had lifetimes of over 62111 h operating at rated power of 10 W. 展开更多
关键词 high power semiconductor lasers high wall-plug efficiency COMD
下载PDF
Research on quantum well intermixing of 680 nm AlGaInP/GaInP semiconductor lasers induced by composited Si-Si_(3)N_(4) dielectric layer 被引量:3
9
作者 Tianjiang He Suping Liu +4 位作者 Wei Li Cong Xiong Nan Lin Li Zhong Xiaoyu Ma 《Journal of Semiconductors》 EI CAS CSCD 2022年第8期46-52,共7页
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the... The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication. 展开更多
关键词 high power semiconductor laser rapid thermal annealing composited dielectric layer quantum well intermixing optical catastrophic damage nonabsorbent window
下载PDF
离子注入在Power MOSFET中的应用
10
作者 郑海东 叶润涛 陈晓明 《微细加工技术》 1991年第3期33-37,共5页
本文结合笔者的科研,论述了离子注入在Power MOS FET制作中的应用,并指出:由于离子注入较之扩散具有一系列优点,因此,离子注入不仅在制作Power MOS FET中作用巨大,而且在其他功率器件中的应用也将越来越广泛。
关键词 离子注入 功率器件 MOSFET
下载PDF
Pressure Tolerant Power Electronics: IGBT Gate Driver for Operation in High Pressure Hydrostatic Environment
11
作者 Riccardo Pittini Magnar Hernes Kjell Ljokelsoy 《Journal of Energy and Power Engineering》 2012年第9期1500-1508,共9页
Abstract: This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic comp... Abstract: This paper presents results from an on-going research project on pressure tolerant power electronics at SINTEF Energy Research, Norway. The driving force for this research is to enable power electronic components to operate in pressurized dielectric environment. The intended application is the converters for operation down to 3,000 meters ocean depth, primarily for subsea oil and gas processing. The paper focuses on the needed modifications to a general purpose gate driver for IGBT (insulated gate bipolar transistors) that will give pressure tolerance. Adaptations and modifications of the individual driver components are presented.The results from preliminary testing are promising, which shows that the considered adaptations give feasible solutions. 展开更多
关键词 Pressure tolerant power electronics IGBT gate driver voltage source converter capacitors power semiconductors.
下载PDF
Simulation with Ideal Switch Models Combined with Measured Loss Data Provides a Good Estimate of Power Loss
12
作者 Stig Munk-Nielsen Lucian N Tutelea Ulrik Jager 《电力电子技术》 CSCD 北大核心 2007年第8期107-110,共4页
Ideally,converter losses should be determined without using an excessive amount of simulation time.State-of-the-art power semiconductor models provide good accuracy,unfortunately they often require a very long simulat... Ideally,converter losses should be determined without using an excessive amount of simulation time.State-of-the-art power semiconductor models provide good accuracy,unfortunately they often require a very long simulation time.This paper describes how to estimate power losses from simulation using ideal switches combined with measured power loss data.The semiconductor behavior is put into a look-up table,which replaces the advanced semiconductor models and shortens the simulation time.To extract switching and conduction losses,a converter is simulated and the semiconductor power losses are estimated.Measurement results on a laboratory converter are compared with the estimated losses and a good agreement is shown.Using the ideal switch simulation and the post processing power estimation program,a ten to twenty fold increase in simulation speed is obtained,compared to simulations using advanced models of semiconductors. 展开更多
关键词 电力损耗 电力半导体器件 模拟 理想开关模型 估测
下载PDF
新一代高韧性直流输电技术(一):从器件、装备到系统 被引量:1
13
作者 曾嵘 赵彪 +6 位作者 余占清 吴锦鹏 魏晓光 白睿航 刘佳鹏 屈鲁 宋强 《中国电机工程学报》 EI CSCD 北大核心 2024年第18期7321-7333,I0018,共14页
构建高比例新能源、高比例电力电子化的新型电力系统迫切需要具有超强构网和主动支撑能力的新型直流输电技术。为此,文中秉承“一代器件、一代装备、一代系统”理念,提出新一代高韧性直流输电概念。增强型集成门极换流晶闸管(enhanced i... 构建高比例新能源、高比例电力电子化的新型电力系统迫切需要具有超强构网和主动支撑能力的新型直流输电技术。为此,文中秉承“一代器件、一代装备、一代系统”理念,提出新一代高韧性直流输电概念。增强型集成门极换流晶闸管(enhanced integrated gate-commutated thyristor,IGCT-Plus)的半导体本征结构拥有超强的浪涌电流能力,将为高暂态耐受的换流器提供坚实的物理基础;新型模块化换向式换流器(modular commutated converter,MCC)拥有优异的软开关特性,将是高倍载直流输电系统的优选方案;IGCT-Plus和MCC作为核心器件和装备将支撑具有电压和频率强支撑能力的新型高韧性直流输电系统构建。文中从新型器件、新型装备到新型系统对高韧性直流输电技术进行全面论述,并对后续发展中存在的关键问题和技术进行分析和展望。提出的高韧性直流输电技术对支撑双高电力系统的安全稳定运行具有重要意义,有望成为未来电力传输中的崭新方式。 展开更多
关键词 直流输电 功率半导体器件 门极换流晶闸管 交直流换流器
下载PDF
压控型脉冲功率半导体器件技术及应用
14
作者 孙瑞泽 陈万军 +3 位作者 刘超 刘红华 姚洪梅 张波 《强激光与粒子束》 CAS CSCD 北大核心 2024年第9期94-102,共9页
近年来,采用新一代半导体开关替代传统气体或真空开关是脉冲功率系统的一种重要发展趋势。为了给脉冲功率半导体器件领域的技术发展提供参考,简要介绍了压控型脉冲功率半导体器件技术的发展历程,总结了MOS栅控晶闸管(MCT)在器件设计、... 近年来,采用新一代半导体开关替代传统气体或真空开关是脉冲功率系统的一种重要发展趋势。为了给脉冲功率半导体器件领域的技术发展提供参考,简要介绍了压控型脉冲功率半导体器件技术的发展历程,总结了MOS栅控晶闸管(MCT)在器件设计、工艺和可靠性等方面的研究进展,同时通过比较MCT与一般商业IGBT器件,阐述了MCT相比于其他功率脉冲半导体器件的优劣情况,并结合典型应用场景展示了MCT器件的优势,对压控型脉冲功率半导体器件的发展趋势进行了简要分析。 展开更多
关键词 脉冲功率技术 脉冲功率半导体开关 MOS栅控晶闸管 电压控制 重复脉冲
下载PDF
Perovskite-Inspired Lead-Free Ag2BiI5 for Self-Powered NIR-Blind Visible Light Photodetection 被引量:2
15
作者 Vincenzo Pecunia Yue Yuan +5 位作者 Jing Zhao Kai Xia Yan Wang Steffen Duhm Luis Portilla Fengzhu Li 《Nano-Micro Letters》 SCIE EI CAS CSCD 2020年第2期199-210,共12页
In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been i... In recent years,solution-processible semiconductors with perovskite or perovskite-inspired structures have been extensively investigated for optoelectronic applications.In particular,silver-bismuth-halides have been identified as especially promising because of their bulk properties and lack of heavily toxic elements.This study investigates the potential of Ag2BiI5 for near-infrared(NIR)-blind visible light photodetection,which is critical to emerging applications(e.g.,wearable optoelectronics and the Internet of Things).Self-powered photodetectors were realized and provided a near-constant≈100 mA W−1 responsivity through the visible,a NIR rejection ratio of>250,a long-wavelength responsivity onset matching standard colorimetric functions,and a linear photoresponse of>5 orders of magnitude.The optoelectronic characterization of Ag2BiI5 photodetectors additionally revealed consistency with one-center models and the role of the carrier collection distance in self-powered mode.This study provides a positive outlook of Ag2BiI5 toward emerging applications on low-cost and low-power NIR-blind visible light photodetector. 展开更多
关键词 Perovskite-inspired semiconductor Silver bismuth iodide Self-powered photodetector NIR-blind photodetector Visible light photodetector
下载PDF
国产功率芯片射频解冻模块设计与应用
16
作者 南敬昌 戴涛 丛密芳 《辽宁工程技术大学学报(自然科学版)》 CAS 北大核心 2024年第5期633-640,共8页
为提高射频解冻领域相关产品的自主可控能力,基于国产自研横向扩散金属氧化物半导体(lateral diffusedmetaloxidesemiconductors,LDMOS)功率芯片,提出一种由全国产晶体管放大电路构成的大功率射频解冻模块设计方案。该方案核心放大电路... 为提高射频解冻领域相关产品的自主可控能力,基于国产自研横向扩散金属氧化物半导体(lateral diffusedmetaloxidesemiconductors,LDMOS)功率芯片,提出一种由全国产晶体管放大电路构成的大功率射频解冻模块设计方案。该方案核心放大电路部分采用三级级联自研功率放大器,分别为前置级DS5089、驱动级DS6S0910P和末级DS300AN,并设计大功率射频解冻模块。对模块进行射频性能测试、功能测试以及可靠性测试。研究结果表明:基于国产晶体管设计的模块具备较好的射频性能,饱和输出功率大于53 dBm,电源转化效率超过60%,并能在特定时间内快速有效地完成食物解冻。研究结论为射频解冻领域国产晶体管放大电路设计提供参考。 展开更多
关键词 国产化 功率放大器 横向扩散金属氧化物半导体 射频解冻 大功率
下载PDF
Applications of Wide Bandgap Semiconductor Materials in High-Power Electronic Devices
17
作者 Yucheng Zhou 《World Journal of Engineering and Technology》 2024年第4期1034-1045,共12页
Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconduc... Wide bandgap semiconductor materials are driving revolutionary improvements in the performance of high-power electronic devices. This study systematically evaluates the application prospects of wide bandgap semiconductor materials in high-power electronic devices. The research first compares the physical properties of major wide bandgap materials (such as silicon carbide SiC and gallium nitride GaN), analyzing their advantages over traditional silicon materials. Through theoretical calculations and experimental data analysis, the study assesses the performance of these materials in terms of high breakdown field, high thermal conductivity, and high electron saturation velocity. The research focuses on the application of SiC and GaN devices in power electronics, including high-voltage DC transmission, electric vehicle drive systems, and renewable energy conversion. The study also discusses the potential of wide bandgap materials in RF and microwave applications. However, the research also points out the challenges faced by wide bandgap semiconductor technology, such as material defect control, device reliability, and cost issues. To address these challenges, the study proposes solutions, including improving epitaxial growth techniques, optimizing device structure design, and developing new packaging methods. Finally, the research looks ahead to the prospects of wide bandgap semiconductors in emerging application areas such as quantum computing and terahertz communications. This study provides a comprehensive theoretical foundation and technology roadmap for the application of wide bandgap semiconductor materials in high-power electronic devices, contributing to the development of next-generation high-efficiency energy conversion and management systems. 展开更多
关键词 Wide Bandgap semiconductors High-power Electronics Silicon Carbide Gallium Nitride power Electronics
下载PDF
大功率射频Si-VDMOS功率晶体管研制
18
作者 刘洪军 王琪 +2 位作者 赵杨杨 王佃利 杨勇 《现代雷达》 CSCD 北大核心 2024年第5期70-74,共5页
介绍了大功率射频硅-垂直双扩散金属氧化物场效应晶体管(Si-VDMOS)的研制结果,采用栅分离降低反馈电容技术、多子胞降低源极电感技术等,从芯片原理着手,比较分析两种芯片结构设计对反馈电容的影响,以及两种布局引线对源极电感的影响,并... 介绍了大功率射频硅-垂直双扩散金属氧化物场效应晶体管(Si-VDMOS)的研制结果,采用栅分离降低反馈电容技术、多子胞降低源极电感技术等,从芯片原理着手,比较分析两种芯片结构设计对反馈电容的影响,以及两种布局引线对源极电感的影响,并研制出了百瓦级以上大功率射频Si-VDMOS功率晶体管系列产品。产品主要性能如下:在工作电压28 V及连续波下,采用8胞合成时,225 MHz输出功率达200 W以上,500 MHz输出功率达150 W以上;进一步增加子胞数量,采用12胞合成时,225 MHz输出功率达300 W以上,同时具备良好的增益及效率特性,与国外大功率射频Si-VDMOS功率晶体管的产品参数相比,达到了同类产品水平。 展开更多
关键词 大功率 硅-垂直双扩散金属氧化物场效应晶体管 射频功率晶体管 反馈电容 源极电感
下载PDF
激光触发多门极半导体开关初步研究
19
作者 刘宏伟 王凌云 +6 位作者 栾崇彪 袁建强 谢卫平 杨杰 何泱 付佳斌 徐乐 《强激光与粒子束》 CAS CSCD 北大核心 2024年第11期25-31,共7页
固态脉冲功率源在脉冲功率技术领域应用广泛,已经成为新的研究热点,其中,高功率固态开关器件是固态脉冲功率源的核心。报道了一种新型光触发多门极半导体开关(LIMS),该开关具备光致线性模式和场致增益模式两种工作模式,解决了传统电控... 固态脉冲功率源在脉冲功率技术领域应用广泛,已经成为新的研究热点,其中,高功率固态开关器件是固态脉冲功率源的核心。报道了一种新型光触发多门极半导体开关(LIMS),该开关具备光致线性模式和场致增益模式两种工作模式,解决了传统电控器件电流上升率低的问题,实现了器件的高电流上升率,光致线性模式下实验测试得到了454 kA/μs的电流上升率,该开关在雷管起爆、电磁脉冲模拟等领域已得到初步应用。 展开更多
关键词 光触发多门极半导体开关 固态脉冲功率源 重复频率
下载PDF
One-dimensional dynamic equations of a piezoelectric semiconductor beam with a rectangular cross section and their application in static and dynamic characteristic analysis 被引量:2
20
作者 Peng LI Feng JIN Jianxun MA 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2018年第5期685-702,共18页
Within the framework of continuum mechanics, the double power series ex- pansion technique is proposed, and a series of reduced one-dimensional (1D) equations for a piezoelectric semiconductor beam are obtained. The... Within the framework of continuum mechanics, the double power series ex- pansion technique is proposed, and a series of reduced one-dimensional (1D) equations for a piezoelectric semiconductor beam are obtained. These derived equations are universal, in which extension, flexure, and shear deformations are all included, and can be degen- erated to a number of special cases, e.g., extensional motion, coupled extensional and flexural motion with shear deformations, and elementary flexural motion without shear deformations. As a typical application, the extensional motion of a ZnO beam is analyzed sequentially. It is revealed that semi-conduction has a great effect on the performance of the piezoelectric semiconductor beam, including static deformations and dynamic be- haviors. A larger initial carrier density will evidently lead to a lower resonant frequency and a smaller displacement response, which is a little similar to the dissipative effect. Both the derived approximate equations and the corresponding qualitative analysis are general and widely applicable, which can clearly interpret the inner physical mechanism of the semiconductor in the piezoelectrics and provide theoretical guidance for further experimental design. 展开更多
关键词 piezoelectric semiconductor beam reduced one-dimensional (1D) equation double power series expansion technique stress relaxation initial carrier density
下载PDF
上一页 1 2 48 下一页 到第
使用帮助 返回顶部