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STRONG LAW OF LARGE NUMBERS AND ASYMPTOTIC EQUIPARTITION PROPERTY FOR NONSYMMETRIC MARKOV CHAIN FIELDS ON CAYLEY TREES 被引量:2
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作者 包振华 叶中行 《Acta Mathematica Scientia》 SCIE CSCD 2007年第4期829-837,共9页
Some strong laws of large numbers for the frequencies of occurrence of states and ordered couples of states for nonsymmetric Markov chain fields (NSMC) on Cayley trees are studied. In the proof, a new technique for ... Some strong laws of large numbers for the frequencies of occurrence of states and ordered couples of states for nonsymmetric Markov chain fields (NSMC) on Cayley trees are studied. In the proof, a new technique for the study of strong limit theorems of Markov chains is extended to the case of Markov chain fields, The asymptotic equipartition properties with almost everywhere (a,e.) convergence for NSMC on Cayley trees are obtained, 展开更多
关键词 Cayley tree nonsymmetric Markov chain fields strong law of large numbers asymptotic equipartition property
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MIMUMUM DEGREE AND BINDING NUMBER FOR k-FACTORS WITH PRESCRIBED PROPERTIES 被引量:1
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作者 陈赐平 《Acta Mathematica Scientia》 SCIE CSCD 1992年第4期374-380,共7页
Let integer k≥1, G be a graph of order n,n≥max {4k - 6, 4} and kn=0 (mod 2). Assume that the binding number of G is more than 2-2/n or the minimum degree of G is more than n/2. We prove that (i) G hasa k-fartor that... Let integer k≥1, G be a graph of order n,n≥max {4k - 6, 4} and kn=0 (mod 2). Assume that the binding number of G is more than 2-2/n or the minimum degree of G is more than n/2. We prove that (i) G hasa k-fartor that contains a given edge; (ii) G has a k-factor that does not contain a given edge. 展开更多
关键词 TH UT MIMUMUM DEGREE AND BINDING number FOR k-FACTORS WITH PRESCRIBED PROPERTIES
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Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes
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作者 Zhi-Hui Wang Xiao-Lan Wang +6 位作者 Jun-Lin Liu Jian-Li Zhang Chun-Lan Mo Chang-Da Zheng Xiao-Ming Wu Guang-Xu Wang Feng-Yi Jiang 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第8期79-82,共4页
In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits ap... In GaN-based green light-emitting diodes(LEDs) with different green quantum well numbers grown on Si(111)substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7. 展开更多
关键词 GAN Effect of Green Quantum Well number on Properties of Green GaN-Based Light-Emitting Diodes
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