Device Characteristics Comparison Between GaAs Single and Double Delta-Doped Pseudomorphic High Electron Mobility Transistors

The Al 0.24Ga 0.76As/In 0.22Ga 0.78As single delta-doped PHEMT (SH-PHEMT) and double delta-doped PHEMT (DH-PHEMT) are fabricated and investigated.Based on the employment of double heterojunction,double delta doped design,the DH-PHEMT can enhance the carrier confinement,increase the electron gas density,and improve the electron gas distribution,which is beneficial to the device performance.A high device linearity,high transconductance over a large gate voltage swing,high current drivability are found in DH-PHEMT.These improvements suggest that DH-PHEMT is more suitable for high linearity applications in microwave power device.

Ice-wedge Pseudomorphs Showing Climatic Change Since the Late Pleistocene in the Source Area of the Yellow River, Northeast Tibet

The source area of the Yellow River is located in the northeastern Tibetan Plateau, and is a high-elevation region with the annual mean temperature of -3.9℃. The ice-wedge pseudomorphs discovered in this region are recognized as two types. One was found in sandy gravel beds of the second terrace of the Yellow River. This ice-wedge pseudomorph is characterized by higher ratio of breadth/depth, and are 1-1.4 m wide and about 1 m deep. The bottom border of the ice-wedge pseudomorph is round arc in section. Another discovered in the pedestal of the second terrace has lower ratio of width/depth, and is o.3-1.0 m wide and 1-2 m deep. Its bottom border is sharp. Based on the TL dating, the former was formed at the middleHolocene （5.69±0.43 ka BP and 5.43±0.41 ka BP）, that is, the Megathermal, and the latter was formed at the late Last Glacial Maximum （13.49±1.43 ka BP）. Additionally, the thawing-freezing folders discovered in the late Late Pleistocene proluvium are 39.83±3.84 ka BP in age. The study on the ice-wedge pseudomorphs showed that the air temperature was lowered by up to 6-7℃ in the source area of the Yellow River when the ice-wedge pseudomorphs and thawing-freezing folds developed.

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this paper.Based on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,etc.By the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the source.The damage power in the injection test is about 40 dBm and in good agreement with the simulation result.This work has a certain reference value for microwave damage assessment of pHEMT.

Preparation of Magnesium Oxide Whisker by MgSO4·5Mg（OH）2·2H2O Whisker ＂Pseudomorph＂ Technique

To promote the scale-up production and industrial application of magnesium oxide （MgO） whiskers, MgO whiskers were prepared by the calcination method of the precursor. The precursor MgSO4·5Mg（OH）2·2H2O （152 MOS） single component was prepared by hydrothermal synthesis reaction in MgSO4 solution and NaOH solution. MgO whisker was prepared by heating treatment of the precursor at low heating speed to keep the structure of the precursor not be destroyed. The composition, the morphology and the structure of these whiskers were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The results indicate that the MgO whisker was about 0.5-1.2 μm in diameter and 20-80 μm in length, with an aspect ratio no less than 100.

一种频率与带宽可调的可重构射频滤波器芯片

本文基于0.25μm砷化镓赝晶高电子迁移率晶体管工艺设计实现了一款频率与带宽皆可调的有源可重构滤波器芯片。该滤波器采用了双通道信道化拓扑结构,每个通道由两级可调谐振器与三级宽带放大器交叉级联构成,通过对通道内各级谐振器频率的同步和异步控制,实现对滤波器的频率与带宽的调谐,通过不同工作频段的通道间切换组合,实现了频率的宽范围调谐。为了验证该设计的有效性,完成了该滤波器的流片,其尺寸为3.1 mm×3.0 mm。经实测,该滤波器通带中心频率可在2.52 GHz~3.92 GHz之间进行调谐,频率调谐比达到了54%,通道内带宽可实现350 MHz~1080 MHz之间的变化,相对带宽可调范围为12%~33%,同时具备了频率和带宽的宽范围调控能力。

Evidence from pseudomorphous β-quartz phenocryst for decompression of rock-forming and ore-forming processes in Shapinggou porphyry Mo deposit

The Shapinggou porphyry molybdenum(Mo) deposit, located in Jinzhai County, Anhui Province, China, is the largest in the Qinling-Dabie Mo Metallogenic Belt. The intrusive rocks in the Shapinggou Mo ore district formed in the Yanshanian can be divided into two stages based on zircon U-Pb dating and geochemical features. This study focuses on the late stage intrusions(quartz syenite and granite porphyry), which are closely genetically related to molybdenum mineralization. Petrographic observations identified two quartz polymorphs in the quartz syenite and granite porphyry, which were derived from the same magmatic sources and similar evolutionary processes. The quartzes were identified as a xenomorphic β-quartz within quartz syenite, while the quartz phenocrysts within the granite porphyry were pseudomorphous b-quartz, characterized by a hexagonal bipyramid crystallography. The pseudomorphous b-quartz phenocrysts within the granite porphyry were altered from b-quartz through phase transformation. These crystals retained b-quartz pseudomorph. Combined with titanium-inzircon thermometry, quartz phase diagrams, and granitic Q-Ab-Or-H_2O phase diagrams, it is suggested that the quartz syenite and granite porphyry were formed under similar magmatic origins, including similar depths and magmatic crystallization temperatures. However, the β-quartz within quartz syenite indicated that the crystallization pressure was greater than 0.7 GPa, while the original b-quartz within the granite porphyry was formed under pressures between 0.4 and 0.7 GPa. The groundmass of the granite porphyry which formed after the phenocryst indicated a crystallizing pressure below 0.05 GPa. This indicates that the granite porphyry was formed under repetitive and rapid decompression. The decompression was significant as it caused the exsolution of the ore-forming fluids, and boiling and material precipitation during the magmatic-fluid process. The volumetric difference during the phase transformation from b-quartz to β-quartz caused extensive fracturing on the granite porphyry body and the wall rocks. As the main ore-transmitting and ore-depositing structures, these fractures benefit the hydrothermal alteration and stockwork-disseminated mineralization of the porphyry deposit. It is considered that the pseudomorphous β-quartz phenocrysts of the porphyritic body are metallogenic indicators within the porphyry deposits. The pseudomorphous β-quartzes therefore provide evidence for the formation of the porphyry deposit within a decompression tectonic setting.

X波段平衡式限幅低噪声放大器MMIC

为满足接收机的小型化需求,基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款用于8~12 GHz的平衡式限幅低噪声放大器(LNA)单片微波集成电路(MMIC)。将Lange电桥、限幅器、LNA集成在同一衬底上,Lange电桥采用异形设计,芯片比传统尺寸降低30%以上;限幅器级间采用电感匹配结构,提升MMIC的工作带宽;LNA采用并联负反馈、源极电感负反馈以及电流复用拓扑结构,实现超低功耗和良好的稳定性。芯片采用整体最优化设计,在片测试结果表明,在工作频带内,限幅LNA MMIC芯片的增益为(25±0.2)dB(去除1 dB斜率),噪声系数小于1.6 dB,总功耗小于100 mW,耐功率大于46 dBm,该芯片尺寸为2.8 mm×2.4 mm,充分体现了集成工艺的性能和尺寸优势。

基于GaAs PHEMT工艺的超宽带多通道开关滤波器组MMIC

基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款超宽带7路开关滤波器组单片微波集成电路(MMIC)芯片。芯片内集成了开关、驱动电路和带通滤波器,实现了开关滤波功能。开关采用反射式串-并联混合结构;译码器和驱动电路控制某一支路开关的导通或关断;带通滤波器由集总电感和电容组成。该开关滤波器组芯片通带频率覆盖0.8~18 GHz。探针测试结果表明,开关滤波器组芯片各个支路的中心插入损耗均小于8.5 dB,通带内回波损耗小于10 dB,典型带外衰减大于40 dB。为后续研发尺寸更小、性能更优的开关滤波器组提供了参考。

2~6GHz高性能开关滤波器组MMIC

基于0.25μm GaAs E/D赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款2~6 GHz开关滤波器组单片微波集成电路(MMIC)芯片。片上集成了8路带通滤波器、输入、输出单刀八掷(SP8T)开关、3-8译码器和驱动器。通过输入、输出SP8T开关进行通道选择,采用三串两并结构,提高了通道间隔离度。带通滤波器组采用多级LC谐振器实现,最小、最大相对带宽分别为18%和100%,可用于宽带及窄带滤波器设计,具有通带插入损耗小,阻带抑制度高等优点。末级级联低通滤波器,实现远端寄生通带抑制大于35 dBc。在片探针测试结果显示,该开关滤波器组芯片在2~6 GHz频率范围内,每个带通滤波器的插入损耗均小于8.5 dB,阻带衰减为40 dB。该芯片具有通道多、功能复杂、集成度高的特点,可应用于宽带雷达系统进行频率预选。

克什克腾世界地质公园达里诺尔园区重要地质遗迹特征及其对湖泊演化的指示

湖岸地貌不仅可以与湖相沉积物共同指示湖泊演化过程,同时还是具有较高观赏价值的地貌景观,因此成为重要的地质遗迹。内蒙古克什克腾世界地质公园达里诺尔园区保存了大量的地质遗迹,对湖泊演化及气候变化具有很好的指示意义。本研究从地貌角度出发,对达里诺尔园区代表古湖面的湖蚀穴、湖蚀凹槽、湖蚀柱和湖蚀崖等湖蚀地貌,湖岸堤和湖成阶地等湖积地貌,以及河流地貌和冰缘地貌进行详细的野外地质调查,通过剖面实测并与湖岸沉积物和湖心钻孔岩心进行对比,判断达里湖全新世以来湖水面的变化,进而重建湖泊的演化过程。湖蚀地貌表明,达里湖曾存在4期明显的高湖面,海拔高度分别为1303 m、1296 m、1288 m和1277 m;而在1280 m以下主要发育湖成阶地和湖岸堤等湖积地貌。被称为世界最窄河流耗来河的不断发育代表了湖水位不断下降的过程,古冰楔及其上覆的硅藻土的发育指示了一次湖退和一次湖进事件。该研究对季风边缘区湖泊演化历史的重建可提供参考。

带数字驱动的DC-18 GHz单刀三掷开关设计

设计了一款带数字驱动的DC-18 GHz单刀三掷开关(Single-Pole Three-Throw,SP3T)芯片。该芯片集成了单刀三掷开关和数字驱动器。单刀三掷开关由2个单刀双掷开关级联组成。单刀双掷开关采用吸收式开关结构,可以实现更好的关态驻波比。驱动电路采用直接耦合场效应晶体管逻辑(Direct Coupled Field Effect Transistor Logic,DCFL)式逻辑电路,具有结构简单、功耗低的优点。版图经过合理布局后,芯片尺寸为1.5 mm×2 mm。测试结果表明:在DC-18 GHz频段内,芯片插入损耗小于3.5 dB,隔离度大于50 dB。芯片采用5 V/0 V逻辑控制,开关速度小于8 ns,1 dB压缩输入功率23 dBm。

2~18 GHz GaAs超宽带低噪声放大器MMIC

基于90 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并制备了一款2~18 GHz的超宽带低噪声放大器(LNA)单片微波集成电路(MMIC)。该款放大器具有两级共源共栅级联结构,通过负反馈实现了超宽带内的增益平坦设计。在共栅晶体管的栅极增加接地电容,提高了放大器的高频输出阻抗,进而拓宽了带宽,提高了高频增益,并降低了噪声。在片测试结果表明,在5 V单电源电压下,在2~18 GHz内该低噪声放大器小信号增益约为26.5 dB,增益平坦度小于±1 dB,1 dB压缩点输出功率大于13.5 dBm,噪声系数小于1.5 dB,输入、输出回波损耗均小于-10 dB,工作电流为100 mA,芯片面积为2 mm×1 mm。该超宽带低噪声放大器可应用于雷达接收机系统中,有利于接收机带宽、噪声系数和体积等的优化。

基于GaAs PHEMT工艺的Ka波段三通道开关滤波器

基于0.15μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款22~42 GHz的宽带三通道开关滤波器芯片。该开关滤波器由单刀三掷开关、带通滤波器、控制电路构成。开关采用场效应晶体管(FET)串并结合结构实现。带通滤波器采用梳状结构,一端加载金属-绝缘体-金属(MIM)电容实现。芯片集成了2∶4线译码器作为控制电路,实现通道的选择和切换。芯片尺寸为3.0 mm×2.4 mm×0.1 mm。测试结果表明,三个通道的插入损耗均小于8.5 dB,带内回波损耗均小于-10 dB,带外衰减均大于40 dB。该开关滤波器芯片具有插入损耗小、隔离度高、集成度高、阻带宽的特点。

E波段GaAs PHEMT工艺有源六倍频器MMIC

基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计了一款输出频率在E波段的有源六倍频器微波单片集成电路(MMIC)。片上集成六倍频器及输出驱动放大器,采用PHEMT管进行倍频,具有较高输出功率及较小的芯片尺寸。在片探针测试结果显示该倍频器芯片在输入功率5dBm时,输出66~88GHz频率范围内,输出功率大于13dBm,谐波抑制20dBc,功耗600 mW,芯片尺寸为3.0 mm×1.4 mm×0.07 mm。

Ka波段高隔离单刀四掷开关芯片

文章基于赝高电子迁移率晶体管(Pseudomorphic High Electron Mobility Transistor,PHEMT)工艺,设计一款Ka波段单刀四掷反射式开关芯片。为降低芯片插入损耗和提高隔离度,电路选取并联型反射式拓扑结构。同时,为提高工作带宽和减小芯片面积,采用高低阻抗变换线替代50Ω传输线方式匹配阻抗。芯片采用0 V和-5 V电压控制支路开关的导通或关断。芯片尺寸为1.85 mm×1.55 mm。实测结果表明,在28~42 GHz工作频带范围内,输入输出回波损耗小于-10 dB,插入损耗小于3.2 dB,隔离度大于38 dB,实现了开关芯片低插损、高隔离度的优异性能。

GaAs毫米波双路数控衰减器MMIC

基于GaAs E/D赝配高电子迁移率晶体管(PHEMT)工艺,设计并实现了一款毫米波双路数控衰减器。芯片上集成了两个4位数控衰减器、一分二功分器和8位数字驱动器。重点介绍了射频电路数控衰减器和功分器的拓扑结构设计。该芯片测试结果显示在26~32 GHz频段内,芯片插入损耗小于6 dB,衰减均方根误差小于0.5 dB,衰减附加相移小于±5°,输入输出电压驻波比小于1.6:1,工作电流小于6 mA。芯片尺寸仅为2.00 mm×2.00 mm×0.07 mm。

Monolithic Integration of InGaP/AlGaAs/InGaAs Enhancement/Depletion-Mode PHEMTs

The monolithic integration of enhancement- and depletion-mode （E/D-mode） InGaP/AIGaAs/InGaAs pseudomorphic high electron mobility transistors （PHEMTs） with a 1.0μm gate length is presented. Epilayers are grown on SI GaAs substrates using MBE. For this structure, a mobility of 5410cm^2/（V · s） and a sheet density of 1.34 × 10^12 cm^-2 are achieved at room temperature. During the gate fabrication of E/D-mode PHEMTs,a novel twostep technology is applied. The devices with a gate dimension of 1μm × 100μm exhibit good DC and RF performances. Threshold voltages of 0. 2 and -0. 4V,maximum drain current densities of 300 and 340mA/mm,and extrinsic transconductances of 350 and 300mS/mm for E- and D-mode PHEMTs are obtained, respectively. The reverse gatedrain breakdown voltage is -14V for both E- and D-mode. Current-gain cutoff frequencies of 10. 3 and 12.4GHz and power-gain cutoff frequencies of 12.8 and 14.7GHz for E- and D-mode are reported, respectively.

新疆西天山超高压变质榴辉岩

在新疆西天山 3类榴辉岩中均发现了超高压变质矿物:在第Ⅰ类与蓝片岩互层的榴辉岩中发现了柯石英假像;在第Ⅱ类枕状榴辉岩的绿辉石中发现了石英出溶叶片;在第Ⅲ类产于大理岩中呈透镜状的方解石/白云石榴辉岩中发现了变质成因的菱镁矿。详细的岩石矿物学研究表明,第Ⅰ类榴辉岩 3个阶段的变质演化温压条件为:UHP前变质阶段(35 6～ 4 33℃,0.8～ 1.0GPa)、峰期UHP榴辉岩相阶段(4 96～ 5 98℃,2.5 72～ 2.6 6 6GPa)和退变绿帘蓝片岩相阶段(5 0 0～ 5 30℃,1.0～ 1.2GPa),并建立了在NCMASCH (Na2 O -CaO -MgO -Al2 O3-SiO2 -CO2 -H2 O)体系中出现蓝闪石、石榴石、绿辉石、菱镁矿、白云石、黝帘石、柯石英、CO2 和H2 O的相平衡关系。经变质反应分析和相平衡理论计算西天山含菱镁矿的蓝闪石榴辉岩的变质峰期温压条件为:2.7～ 2.8GPa和 5 2 5～ 6 0 7℃,XCO2 低于 0.0 0 6。超高压变质矿物的发现表明西天山榴辉岩经历了超高压变质作用,所谓的南天山造山带可能是世界上规模最大的由洋壳俯冲形成的超高压变质带。

一种制备氧化镁纤维的方法

尝试以廉价的MgCl2·6H2O和NH3·H2O为原料,通过"假象"工艺制备氧化镁纤维.制得了结晶良好、具有纤维状外形的Mg2(OH)aCl·3H2O单一物相.借助纤维状中间体,采取分段煅烧工艺,即通过控制低温分解条件使之保持原来的晶体形貌,而通过高温处理使纳米MgO颗粒进一步团聚、长大、烧结得到氧化镁纤维.利用SEM和XRD对产物进行了表征,MgO纤维是由纳米氧化镁颗粒烧结而成的"假象"体,直径在0.3-1.2μm之间,长度>50μm.最佳分解温度为873K,最佳煅烧温度1273K.

铜镜表面“黑漆古”中“痕像”的研究

采用矿相薄片制备方法暴露出“黑漆古”矿化层。矿相显微镜下偏光现察，此矿化层透光、且具有原金属的α与δ痕像及较多圆形颗粒，说明此矿化层是铜镜自身的组成部分而不是附加在镜面上的沉积物或镀锡层腐蚀产物。此矿化层的ＳＥＭ能谱分析显示，ａ与ａ痕像以及圆形颗粒在成分上是十分相近的，是高Ｓｎ、低Ｃｕ并含有一定量的Ｐｂ、Ｓｉ、Ｆｅ。ＸＰＳ及ＸＲＤ分析结果显示铜镜“黑漆古”表面以ＳｎＯ２。细晶为主要组成。以上研究结果对探讨“黑漆古”形成机理提供直接证据。进一步表明矿化层的形成是在铜镜埋葬环境下腐蚀作用的结果，发生了氧化－络合－凝胶析出及脱水等一系列化学变化。