A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature ca...A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature can reach 550℃ even at a low current of 0.1mA.Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.Moreover,since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature,device layout can be varied according to the requirements of applications.展开更多
文摘A silicon temperature sensor with a conventional resistor structure is fabricated on thin-film silicon-on-insulator (SOI) substrate.The sensor has very promising characteristics.The maximum operating temperature can reach 550℃ even at a low current of 0.1mA.Experimental results support that the minority-carrier exclusion effect can be strong in the conventional resistor structure when the silicon film is sufficiently thin,thus significantly raising the maximum operating temperature.Moreover,since the structure of the device on thin-film SOI wafer is not crucial in controlling the maximum operating temperature,device layout can be varied according to the requirements of applications.