This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation...This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10^（-9） W/cm^2 is obtained with a small detector size of 1μm^2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m^2/W·s·μm^2 is obtained without any auxiliary amplifier.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.61076046,61274023)the New Century Excellent Talents Support Program of the Ministry of Educationthe Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201204)
文摘This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10^（-9） W/cm^2 is obtained with a small detector size of 1μm^2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m^2/W·s·μm^2 is obtained without any auxiliary amplifier.
