We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the ...We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots(QDs).To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs,the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken,and the corresponding calculations were performed based on the proposed model.The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device.Then,based on the continuity equation for singlet and triplet excitons,the exciton density profiles of the devices with different QD concentrations were extracted.Subsequently,the corresponding luminance characteristics of the devices were calculated,where the results are in good agreement with the experimental data.展开更多
InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free...InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.展开更多
文摘We present a comprehensive numerical framework for the electrical and optical modeling and simulation of hybrid quantum dot light-emitting diodes(QD-LEDs).We propose a model known as hopping mobility to calculate the carrier mobility in the emissive organic layer doped with quantum dots(QDs).To evaluate the ability of this model to describe the electrical characteristics of QD-LEDs,the measured data of a fabricated QD-LED with different concentrations of QDs in the emissive layer were taken,and the corresponding calculations were performed based on the proposed model.The simulation results indicate that the hopping mobility model can describe the concentration dependence of the electrical behavior of the device.Then,based on the continuity equation for singlet and triplet excitons,the exciton density profiles of the devices with different QD concentrations were extracted.Subsequently,the corresponding luminance characteristics of the devices were calculated,where the results are in good agreement with the experimental data.
基金Acknowledgements This work was supported by the National Basic Research Program of China （Nos. 2013CB632804, 2011CB301900 and 2012CB3155605）, the National Natural Science Foundation of China （Grant Nos. 61176015, 61210014, 51002085, 61321004, 61307024 and 61176059）, and the High Technology Research and Development Program of China （Nos. 2011AA03Al12, 2011AA03A106, 2011AA03A105 and 2012AA050601）.
文摘InGaN quantum dots （QDs） have attracted many research interests in recent years for their potentials to realize long wavelength visible emission from green to red, which can pave a way to fabricate the phosphor-free white light emitting diodes （LEDs）. In this paper, we reported our recent progresses on InGaN QD LEDs, the discussions were dedicated to the basic physics model of the strain relaxation in self-assembled InGaN QDs, the growth of InGaN QDs with a growth interruption method by metal organic vapor phase epitaxy, the optimization of GaN barrier growth in multilayer InGaN QDs, the demonstration of green, yellow-green and red InGaN QD LEDs, and future challenges.
