A composite beam is symmetric if both the material property and support are symmetric with respect to the middle point. In order to study the free vibration performance of the symmetric composite beams with different ...A composite beam is symmetric if both the material property and support are symmetric with respect to the middle point. In order to study the free vibration performance of the symmetric composite beams with different complex nonsmooth/discontinuous interfaces, we develop an R(x)-orthonormal theory, where R(x) is an integrable flexural rigidity function. The R(x)-orthonormal bases in the linear space of boundary functions are constructed, of which the second-order derivatives of the boundary functions are asked to be orthonormal with respect to the weight function R(x). When the vibration modes of the symmetric composite beam are expressed in terms of the R(x)-orthonormal bases we can derive an eigenvalue problem endowed with a special structure of the coefficient matrix A :=[aij ],aij= 0 if i + j is odd. Based on the special structure we can prove two new theorems, which indicate that the characteristic equation of A can be decomposed into the product of the characteristic equations of two sub-matrices with dimensions half lower. Hence, we can sequentially solve the natural frequencies in closed-form owing to the specialty of A. We use this powerful new theory to analyze the free vibration performance and the vibration modes of symmetric composite beams with three different interfaces.展开更多
The motion of intervariant intedeces under the action of applied stress in the internally faulted 18R martensite in a Cu-Zn-Al shape memory alloy has been studied. Transmission electron microscopy in situ observations...The motion of intervariant intedeces under the action of applied stress in the internally faulted 18R martensite in a Cu-Zn-Al shape memory alloy has been studied. Transmission electron microscopy in situ observations show that the interfaces between 24 martensite variants have different reaction to applied stress. The A/C type and A/B type interfaces have good mobil-ity, the A/D type interface has bad mobiIity, and the different-group-intervariant interfaces are basically immobile.展开更多
Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give ...Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.展开更多
Detailed crystallographic analysis has been undertaken on the various combinations Of 24 martensite variants in the 18R martensite of a Cu-Zn-Al shape memory alloy. Based upon the calculated crystallographic data, the...Detailed crystallographic analysis has been undertaken on the various combinations Of 24 martensite variants in the 18R martensite of a Cu-Zn-Al shape memory alloy. Based upon the calculated crystallographic data, the interface energy of different twin interfaces was calculated using a lowangle-grain-interface model. For the variant/variant pairs in a self-accommodating group. the A/C type and A/B type interfaces have low interface energy, and A/D type interface is an intermediate one. In contrast, the intervariant interfaces that belong to different plate groups have high intrface energy. The calculated results are consiStent with the previous observations of the mobility of intervariant interfaces.展开更多
The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method dir...The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.展开更多
文摘A composite beam is symmetric if both the material property and support are symmetric with respect to the middle point. In order to study the free vibration performance of the symmetric composite beams with different complex nonsmooth/discontinuous interfaces, we develop an R(x)-orthonormal theory, where R(x) is an integrable flexural rigidity function. The R(x)-orthonormal bases in the linear space of boundary functions are constructed, of which the second-order derivatives of the boundary functions are asked to be orthonormal with respect to the weight function R(x). When the vibration modes of the symmetric composite beam are expressed in terms of the R(x)-orthonormal bases we can derive an eigenvalue problem endowed with a special structure of the coefficient matrix A :=[aij ],aij= 0 if i + j is odd. Based on the special structure we can prove two new theorems, which indicate that the characteristic equation of A can be decomposed into the product of the characteristic equations of two sub-matrices with dimensions half lower. Hence, we can sequentially solve the natural frequencies in closed-form owing to the specialty of A. We use this powerful new theory to analyze the free vibration performance and the vibration modes of symmetric composite beams with three different interfaces.
文摘The motion of intervariant intedeces under the action of applied stress in the internally faulted 18R martensite in a Cu-Zn-Al shape memory alloy has been studied. Transmission electron microscopy in situ observations show that the interfaces between 24 martensite variants have different reaction to applied stress. The A/C type and A/B type interfaces have good mobil-ity, the A/D type interface has bad mobiIity, and the different-group-intervariant interfaces are basically immobile.
基金Sponsored by Motorola-Peking University Joint Project.Contract No.:MSPSDDLCHINA-0004
文摘Forward gated-diode Recombination-Generation(R-G) current method is applied to an NMOSFET/SOI to measure the stress-induced interface traps in this letter. This easy but accurate experimental method can directly give stress-induced average interface traps for characterizing the device's hot carrier characteristics. For the tested device, an expected power law relationship of ANit ～ t0.787 between pure stress-induced interface traps and accumulated stressing time is obtained.
文摘Detailed crystallographic analysis has been undertaken on the various combinations Of 24 martensite variants in the 18R martensite of a Cu-Zn-Al shape memory alloy. Based upon the calculated crystallographic data, the interface energy of different twin interfaces was calculated using a lowangle-grain-interface model. For the variant/variant pairs in a self-accommodating group. the A/C type and A/B type interfaces have low interface energy, and A/D type interface is an intermediate one. In contrast, the intervariant interfaces that belong to different plate groups have high intrface energy. The calculated results are consiStent with the previous observations of the mobility of intervariant interfaces.
基金special funds of major state basic research projects (G20000365)
文摘The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.
