The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk c...The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.展开更多
This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1014 to 5×1015 cm-2. The Raman spectra measured on th...This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1014 to 5×1015 cm-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al0.25Ga0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.展开更多
文摘The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.
基金the National Natural Science Foundation of China (Grant No. 19975030) .
文摘This paper reported the effect of the weak damage in the Al0.25Ga0.75As/GaAs epitaxial layer induced by 0.8 MeV Si ions implantation with ion dose from 1×1014 to 5×1015 cm-2. The Raman spectra measured on these samples showed that there were two kinds of phonon modes existing in the epitaxial Al0.25Ga0.75As films. The strains induced in the implanted layer and the corresponding lattice parameters were also evaluated as a function of the implanted dose. In addition, the Rutherford backscattering spectrometry/channeling (RBS/C) was also measured on these samples. These two measurement techniques all confirmed that the implantation only induced weak damage in the material.
