Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

High Potential Columnar Nanocrystalline AlN Films Deposited by RF Reactive Magnetron Sputtering

Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.

Influence of boron contents on properties of AlMgB films prepared by RF magnetron sputtering

Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and one boron target. The thickness of the as-deposited thin film was controlled to 500 nm by adjusting deposition time. The influences of sputtering powers on the elemental contents and structural and mechanical properties were investigated by electron probe microanalysis (EPMA), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), and nanoindentation system. At the same time, the ball-on-disk tribometer was used to measure the friction behavior of the films. Experimental results indicate that the as-deposited boron-rich films are primarily amorphous structure and possess a dramatic high hardness up to 39 GPa with 99.03 at.% boron. Obviously, it has exceeded the hardness value of 32 GPa of pure AlMgB 14 bulk material prepared by sintering method. Furthermore, the friction coefficients of the thin films exhibit an average value as low as 0.3, which is considered as the effect of self-lubricating.

Preparation of TiAlN/ZrN and TiCrN/ZrN multilayers by RF magnetron sputtering

Titanium-based nitride coatings on cutting tools,press molds and dies can be used to prolong their life cycle because of their superior corrosion and oxidation resistance.TiAlN/ZrN and TiCrN/ZrN multilayer coatings were prepared by RF magnetron sputtering,and their microstructural evolution and corrosion resistance during heat treatment were investigated.The TiAlN/ZrN and TiCrN/ZrN multilayer coatings are degraded by heating up to 600 ℃ with the formation of oxides particles on the surface.During the heat treatment,the TiCrN/ZrN and TiAlN/ZrN multilayer coatings show the lowest corrosion current density and the highest polarization resistance at temperature range of 400-500 ℃.Consequently,the TiAlN/ZrN and TiCrN/ZrN multilayer coatings show good corrosion resistance at temperature range of 400-500 ℃ during heating.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide (ITO) thin films were prepared using conventional radio frequency (RF) planar magne-tron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1:1 at various IR irradiation temperatures TI (from room temperature to 400°C). The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR TI, the crystalline seeds appear at TI = 300°C, and the films are amorphous at the temperature ranging from 27°C to 400°C. AFM investigation shows that the roughness value of peak-valley of ITO thin film (Rp-v) and the surface microstructure of ITO thin films have a close relation with TI. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film’s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the TI. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rate (fo2), and the mole ratio of Sn/In in the samples reduces with an increase in fo2.

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10-3 Ω·cm was obtained.

RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.

Influence of oxygen gas content on the structural and optical properties of ZnO thin films deposited by RF magnetron sputtering at room temperature

Zinc oxide (ZnO) thin films were deposited on sapphire (0001) substrates at room temperature by radiofrequency (RF) magnetron sputtering at oxygen gas contents of 0%,25%,50% and 75%,respectively.The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system,X-ray diffraction analysis,atomic force microscopy,and UV spectrophotometry.It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content,and the maximum grain size locates at the 25% oxygen gas content.The crystalline quality and average optical transmittance (>90%) in the visible-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents.The obtained results can be attributed to the resputtering by energetic oxygen anions in the growing process.

Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering

This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering,and then aged under circumstance for years.Samples were characterized with several different techniques such as x-ray diffraction,x-ray photoelectron spectroscopy,and Raman,when they were fresh from sputter chamber and aged after years,respectively,in order to determine their structure and composition.It finds that a small amount of sodium occurred on the surface of vanadium dioxide films,which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature.It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films,thus inducing much change in Raman modes.

Influence of Deposition Pressure on Properties of ZnO：Al Films Fabricated by RF Magnetron Sputtering

Transparent conductive aluminum doped zinc oxide(ZnO:Al,AZO) films were prepared on glass substrates by rf(radio frequency) magnetron sputtering from ZnO: 3wt% Al_2O_3 ceramic target. The effect of argon gas pressure(PAr) was investigated with small variations to understand the influence on the electrical, optical and structural properties of the films. Structural examinations using X-ray diffraction(XRD) and scanning electron microscopy(SEM) showed that the ZnO:Al thin films were(002) oriented. The resistivity values were measured by four-point probe with the lowest resistivity of 5.76×10^(-4) Ω?cm(sheet resistance=9.6 Ω/sq. for a thickness=600 nm) obtained at the PAr of 0.3 Pa. The transmittance was achieved from ultravioletvisible(UV-VIS) spectrophotometer, 84% higher than that in the visible region for all AZO thin films. The properties of deposited thin films showed a significant dependence on the PAr.

Preparation of Sn nano-film by direct current magnetron sputtering and its performance as anode of lithium ion battery

Sn thin film on Cu foil substrate as the anode of lithium ion battery was prepared by direct current magnetron sputtering(DCMS). The surface morphology,composition and thickness and the electrochemical behaviors of the prepared Sn thin film were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),inductively coupled plasma atomic emission spectrometry(ICP),cyclic voltammetry(CV) and galvanostatic charge/ discharge(GC) measurements. It is found that the Sn film is consists of pure Sn with an average particle diameter of 100 nm. The thickness of the film is about 320 nm. The initial lithium insertion capacity of the Sn film is 771 mA·h/g. The reversible capacity of the film is 570 mA·h/g and kept at 270 mA·h/g after 20 cycles.

Microstructure, Hardness and Corrosion Resistance of ZrN Films Prepared by Inductively Coupled Plasma Enhanced RF Magnetron Sputtering

ZrN films were deposited on Si(111) and M2 steel by inductively coupled plasma(ICP)-enhanced RF magnetron sputtering.The effect of ICP power on the microstructure,me-chanical properties and corrosion resistance of ZrN films was investigated.When the ICP poweris below 300 W,the ZrN films show a columnar structure.With the increase of ICP power,thetexture coefficient (T_c) of the (111) plane,the nanohardness and elastic modulus of the films in-crease and reach the maximum at a power of 300 W.As the ICP Power exceeds 300 W,the filmsexhibit a ZrN and ZrN_x mixed crystal structure without columnar grain while the nanohardnessand elastic modulus of the films decrease.All the ZrN coated samples show a higher corrosionresistance than that of the bare M2 steel substrate in 3.5% NaCl electrolyte.The nanohardnessand elastic modulus mostly depend on the crystalline structure and T_c of ZrN(111).

Enhanced Photoelectric Property of Mo-C Codoped TiO2 Films Deposited by RF Magnetron Cosputtering

Mo-C codoped TiO_2 films were prepared by RF magnetron cosputtering. Ultraviolet-visible spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, energy dispersive X-ray Analysis and X-Ray Diffraction were used to study the influences of codoping on energy gap, surface morphology, valence states of elements, ions content and crystal structure, respectively. The concentration of photogenerated carriers was measured by studying photocurrent density, while catalytic property was evaluated by observing degradation rate of methylene blue under visible light. A Mo-doped TiO_2 film, whose content of Mo had been optimized in advance, was prepared and later used for subsequent comparisons with codoped samples. The result indicates that Mo-C codoping could curtail the energy gap and shift the absorption edge toward visible range. Under the illumination of visible light, codoped TiO_2 films give rise to stronger photocurrent due to smaller band gaps. It is also found that Mo, C codoping results in a porous surface, whose area declines gradually with increasing carbon content. Carbon and Molybdenum doses were delicately optimized. Under the illumination of visible light, sample doped with 9.78at% carbon and 0.36at% Mo presents the strongest photocurrent which is about 8 times larger than undoped TiO_2 films, and about 6 times larger than samples doped with Mo only.

Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti 底部电极被 magnetrondual-facing-target 劈啪作响系统在 SiO_2/Si 底层上制作。铅锆酸盐泰坦吃了(PZT ) 薄电影是由无线电的扔的 onPt/Ti/ SiO_2/Si 底层频率(RF ) 磁控管劈啪作响系统。为 5 h 被扔的 PZTthin 电影的厚度是大约 800 nm。PZT 薄电影在 700 deg C 为 20 min 在 Ar 环境和 rapid-thermal-annealed 扔了的 XRD 系列表演有好结晶化行为和 perovskite 结构。雏晶的吝啬的直径是 70 nm 和表面的 AFM 显微图表演 PZT 薄电影组织一致、稠密。未加工的平均数，根平均数平方粗糙和 PZT 薄电影的吝啬的粗糙是 34.357 nm， 2.479 nm 并且 1.954 nmrespectively。因为测试频率是 1 kHz， PZT 薄电影经常的电介质是 327.6。Electrichysteresis 循环显示出那强制的地力量，剩余极化力量和 PZT 薄电影的自发的极化力量分别地是 50 kV/cm， 10 muC/cm^2 和 13 muC/cm^2。

Influence of TiO_2 seeding layers on phase composition of lead magnesium niobate-lead titanate thin films prepared by RF magnetron sputtering

The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO_2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.

PREPARATION AND SURFACE CHARACTERIZATION OF TiO_2 THIN FILMS ON GLASS BY MAGNETRON SPUTTERING METHOD

Ti thin films were firstly deposited on glass substrates by magnetron sputtering method, then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thin films on glass substrates were obtained. The structure and surface morphologies of the thin films were characterized by X-ray diffraction and SEM. The growth process of the thin films has been observed. The annealing time and annealing temperatures have an affect on the growth of the films.

Study on SGDC Electrolyte Film Prepared by RF Magnetron Sputtering

Sm and Gd co-doped Ceria (SGDC:Sm_(0.1)Gd_(0.1)Ce_(0.8)O_(1.90)) films as the electrolytes were investigated for the IT-SOFCs (intermediate-temperature solid oxide fuel cells).SGDC sensing films were successfully prepared on the Al_2O_3 substrates by RF-magnetron sputtering.The relationship between sputtering parameters and film microstructure was discussed, and the optimum parameters were gained.The crystal structure analysis and surface morphologic observation of the SGDC films were carried out through X-ray diffraction (XRD) and scanning electron microscopy (SEM).The oxygen ion conductivity of the SGDC film was evaluated by AC impedance spectroscopy at the different temperatures.The XRD analysis shows that the SGDC films grow preferentially along the (111) compact plane.The crystallinity of the SGDC films is enhanced with the increase of the RF sputtering power from 150 W to 250 W.The oxygen ion conductivity of the SGDC was measured at the temperature from 600℃to 800℃in air by AC impedance spectroscopy.The result shows that a high oxygen ion conductivity of 2.44×10^(-2) S.cm^(-1) was achieved at 800℃.

High Ferroelectricities and High Curie Temperature of BiInO3PbTiO3Thin Films Deposited by RF Magnetron Sputtering Method

Properties of ferroelectric xBiInO_3-(1-x)PbTiO_3(xBI-(1-x)PT) thin films deposited on(101) SrRuO_3/(200)Pt/(200) MgO substrates by rf magnetron sputtering method and effects of deposition conditions are investigated.The structures of the xBI-(1-x)PT films are characterized by x-ray diffraction and scanning electron microscopy.The results indicate that the thin films are grown with mainly(001) orientation. The chemical compositions of the films are analyzed by scanning electron probe and the results indicate that the loss phenomena of Pb and Bi elements depend on the pressure and temperature during the sputtering process.The sputtering parameters including target composition, substrate temperature, and gas pressure are adjusted to obtain optimum sputtering conditions. To decrease leakage currents,2 mol% La_2 O_3 is doped in the targets. The P-E hysteresis loops show that the optimized xBI-(1-x)PT(x = 0.24) film has high ferroelectricities with remnant polarization2 P_r = 80μC/cm^2 and coercive electric field 2 E_C = 300 kV/cm. The Curie temperature is about 640℃. The results show that the films have optimum performance and will have wide applications.