Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N...Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.展开更多
基金the National Natural Science Foundation of China (19975 0 3 5 )
文摘Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.
