Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter....Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.展开更多
A significant method in the way the MCU EM78P447A manipulates the RF readerIC MF RC530 ' s functions used in RF IC card application is presented. In this paper, RF reader ICMF RC530's SPI compatible interface ...A significant method in the way the MCU EM78P447A manipulates the RF readerIC MF RC530 ' s functions used in RF IC card application is presented. In this paper, RF reader ICMF RC530's SPI compatible interface is introduced. The kernel technologies including SPI connection,software design, register initiation, request-response between the reader 1C and the MCU,authentication and the proper format of the key are explained. Adopting the serial peripheralinterface is the innovation in the paper. TheSPI communication mode proves feasible and precise.Furthermore, in the way we avoid the abuse of parallel interface.展开更多
In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a V<sub>DD</sub> bus in the popular diode input prot...In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a V<sub>DD</sub> bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To figure out the reason for the excessive lattice heating, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-D device simulator. We analyze the simulation results in detail to show out that a parasitic pnp bipolar transistor action relating nearby p<sup>+</sup>-substrate contacts is responsible for the excessive lattice heating in the diode protection device, which has never been focused before anywhere.展开更多
文摘Analyzing the influence on Q factor, which was caused by the parasitic effect in a CMOS RF on chip integrated inductor, a concise method to increase the Q factor has been obtained when optimizing the layout parameter. Using this method, the Q factor of 7.9 can be achieved in a 5nH inductor (operating frequency is 2GHz) while the errors in inductance are less than 0.5% compared with the aimed values. It is proved by experiments that this method can guarantee the sufficient accuracy but require less computation time. Therefore, it is of great use for the design of the inductor in CMOS RF IC’s.
文摘A significant method in the way the MCU EM78P447A manipulates the RF readerIC MF RC530 ' s functions used in RF IC card application is presented. In this paper, RF reader ICMF RC530's SPI compatible interface is introduced. The kernel technologies including SPI connection,software design, register initiation, request-response between the reader 1C and the MCU,authentication and the proper format of the key are explained. Adopting the serial peripheralinterface is the innovation in the paper. TheSPI communication mode proves feasible and precise.Furthermore, in the way we avoid the abuse of parallel interface.
文摘In this work, we show that an excessive lattice heating problem can occur in the diode electrostatic discharge (ESD) protection device connected to a V<sub>DD</sub> bus in the popular diode input protection scheme, which is favorably used in CMOS RF ICs. To figure out the reason for the excessive lattice heating, we construct an equivalent circuit for input human-body model (HBM) test environment of a CMOS chip equipped with the diode protection circuit, and execute mixed-mode transient simulations utilizing a 2-D device simulator. We analyze the simulation results in detail to show out that a parasitic pnp bipolar transistor action relating nearby p<sup>+</sup>-substrate contacts is responsible for the excessive lattice heating in the diode protection device, which has never been focused before anywhere.
