Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.

RF power design optimization in MRI system

Magnetic resonance image quality and patient safety have been the focus of engineering and research ever since the invention of equipment in the early 1970s.In high field(or ultrahigh field)MRI systems,the emerging techniques induced by B1 field challenges have promoted various potential solutions.This paper describes the relationship between RF power and B1þfield performance,and the overall requirements considered in RF subsystem design.The design of the RF in the MR system is systematically summarized,including the entire transmission chain,sequence algorithm and RF pulse design,and the probabilities for improvement and optimization in the system design are indicated.At the same time,the radio frequency related issues of the human whole-body 7 T MR and animal MR systems are discussed,especially the promising future showed by the technologies such as radio frequency parallel transmission technology in the ultrahigh field.

Compact waveguide CO_2 laser excited by a RF power supply

The design and performance of radio frequency (RF) excited partial Z-fold waveguide CO_2 laser with two channels are exposed. The length of the partial Z-fold channel is 3×460 mm and that of the single channel is 460 mm. The electrodes for the two channels are common and excited by a same RF source. According to our analysis, this kind of structure can greatly improve the laser offset frequency stability. In the experiments, we studied the variation of laser output power with gas pressure for two different channels. The maximum laser output power is about 23 W for the partial Z-fold channel and about 6 W for the single channel.

A prototype RF power source for CSNS/RCS

A prototype RF power source has been built to supply high RF power to a ferrite-loaded cavity, which is a part of R&D of the Rapid Cycling Synchrotron of China Spallation Neutron Source (CSNS/RCS). A direct fast RF feedback amplifier, a 4:1 impedance transformer and auto tuning grid were locally located to compensate the heavy beam loading of CSNS/RCS. Design and commissioning of the RF power source is discussed here, also with some advice on system improvement.

Balmer H_α,H_β and H_γ Spectral Lines Intensities in High-Power RF Hydrogen Plasmas

Hα（Balmer-alpha）, Hβ （Balmer-beta） and Hγ （Balmer-gamma） spectral line inten- sities in atomic hydrogen plasma are investigated by using a high-power RF source. The intensities of the Hα, Hβ and Hγ spectral lines are detected by increasing the input power （0-6 kW） of ICPs （inductively coupled plasmas）. With the increase of net input power, the intensity of Hα im- proves rapidly （0-2 kW）, and then reaches its dynamic equilibrium; the intensities of Hβ can be divided into three processes： obvious increase （0-2 kW）, rapid increase （2-4 kW）, almost constant （4-6 kW）; while the intensities of Hγ increase very slowly. The energy levels of the excited hydro- gen atoms and the splitting energy levels produced by an obvious Stark effect play an important role in the results.

High Power RF Transmitters for ICRF Applications on EAST

An Ion Cyclotron Range of Frequency （ICRF） system with a radio frequency （RF） power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak （EAST）. High RF power transmitters were designed as a part of the research and development （R^D） for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter： the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply （HVPS）. Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.

Discharge Characteristics of Large-Area High-Power RF Ion Source for Positive and Negative Neutral Beam Injectors

A large-area high-power radio-frequency（RF） driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute（KAERI）. The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.

Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.

基于门限判断机会调度的多用户PLC/RF系统性能分析

针对融入译码转发中继技术的混合电力线通信(Power Line Communication, PLC)与射频(Radio-Frequency, RF)传输系统,首先提出了一种基于门限判断的多用户机会调度方案。其次,在PLC和RF链路信道衰落分别服从对数正态分布和相关莱斯分布的条件下,推导出采用所提调度方案的PLC/RF系统中断概率和归一化平均反馈负载的闭合表达式。接着,还通过分析高信噪比条件下系统中断概率的渐进性能,得到系统分集度和阵列增益的简单闭合表达式。最后,计算机仿真不仅验证了理论分析的正确性,而且进一步揭示了所提方案能够在尽量减少反馈负载的同时获得较优的中断性能,从而为实际的系统设计提供参考和依据。

Mathematical modeling of output power in RF-excited CO_2 waveguide lasers

Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.

铜金属表面制备类金刚石薄膜及其力学性能与腐蚀性能的研究

采用厚度0.025 cm纯铜金属箔片为基体,甲烷作为碳源,氢气为工作辅助气体,通过RF-PECVD法,改变射频功率制备类金刚石薄膜(DLC)涂层,研究了射频功率对镀DLC薄膜铜金属微观形貌、硬度、摩擦系数和弹性模量的影响。通过SEM、EDS、拉曼光谱、AFM原子力显微镜进行微观表征。采用弹性模量测试仪、旋转摩擦测试仪、显微硬度计对镀DLC薄膜的铜金属进行研究。结果表明,射频功率为200 W时DLC薄膜存在且均匀分散在纯铜基底的表面。镀DLC薄膜的铜金属弹性模量最大为75 GPa,平均摩擦系数最低为0.11,显微硬度最大达到15.4 GPa。200 W射频功率下镀DLC薄膜铜金属腐蚀电位为-0.178 V,比纯铜金属提高了25.8%,腐蚀电流密度为1.429×10^(-8)A·cm^(-2),相比于纯铜金属降低了近一半。

大功率射频Si-VDMOS功率晶体管研制

介绍了大功率射频硅-垂直双扩散金属氧化物场效应晶体管(Si-VDMOS)的研制结果,采用栅分离降低反馈电容技术、多子胞降低源极电感技术等,从芯片原理着手,比较分析两种芯片结构设计对反馈电容的影响,以及两种布局引线对源极电感的影响,并研制出了百瓦级以上大功率射频Si-VDMOS功率晶体管系列产品。产品主要性能如下:在工作电压28 V及连续波下,采用8胞合成时,225 MHz输出功率达200 W以上,500 MHz输出功率达150 W以上;进一步增加子胞数量,采用12胞合成时,225 MHz输出功率达300 W以上,同时具备良好的增益及效率特性,与国外大功率射频Si-VDMOS功率晶体管的产品参数相比,达到了同类产品水平。

基于RF变量选择与LSTM回归的长期用电量预测模型

由于当前长期用电量预测方法难以解决变量选择问题,造成用电量预测结果不准确,为此将随机森林(RF)算法变量选择与长短期记忆(LSTM)网络回归两者结合,设计基于RF变量选择与LSTM回归的长期用电量预测模型。采用RF方法对单一变量的重要性进行评估,获取各项影响因素与用电量之间的相关系数,然后选取其中取值较高的变量作为用电量预测的依据。结合RF变量选择结果,分析动力系统理论,采用收敛交叉映射方法研究用电量与工业发展水平、温度等因素之间的关系,基于各因素之间的关系结合LSTM回归方法,组建用电量预测模型,实现长期用电量预测。研究结果表明,与传统方法相比,所设计模型的用电量预测精度与预测效率较高,能够快速、准确地完成长期用电量预测,表明该模型的应用价值更高。

一种基于功率合成器和功率分配器的2.45 GHz功率放大器

当前功率放大器在输出效率、输出功率以及线性度等方面不能很好地兼顾,针对这一问题,在三级级联放大方法的基础上,提出了一种基于功率合成器和功率分配器的AB类射频功率放大器。针对线性度和增益的问题,带通匹配和T型网络匹配技术对前置驱动级电路进行了优化设计;利用功率合成技术解决了末级放大器输出功率过大的问题,并且使功率放大器的稳定性和效率得到了保证。为防止功放的温度过高,对功率放大器腔体进行了热特性分析,最高温度为81℃,可以使功放得到良好的降温。在室温测试环境下,当中心频点为2.45 GHz时,射频功率放大器的输出功率为47 dBm,放大增益为42 dB,最大功率附加效率大于45%。测试结果与仿真结果相近,为后续放大器的研究与设计提供了一定的指导。

基于Doherty技术的RF高效率大功率放大电路的设计与分析

基于可以有效提高放大器效率的Doherty技术,本文提出并实现了大功率射频放大电路的设计方法。采用摩托罗拉公司的MRF23140芯片,运用Pspice、Protel、ADS(Advanced Design System)等开发软件,实现了包括直流偏置电路、保护电路、匹配滤波电路、负载牵引电路以及射频放大电路在内的整体设计,并给出了对系统增益、系统效率、系统电流分布、回波损耗等指标的仿真结果。

HIRFL新B1聚束器耦合环的设计与计算

通过将聚束器腔体等效为 RLC并联回路 ,求得了功率馈入耦合环与腔体的互感及自感的公式 ,根据对腔体的计算结果求出了在聚束器的工作频段内达到阻抗匹配所要求的互感变化范围 ,并在该互感变化范围内设计了可移动的耦合电感环 ,计算了它的自感及整个腔体的剩余电感。

RF-MBE生长的高Al势垒层AlGaN/GaN HEMT结构(英文)

采用RFMBE技术,在蓝宝石衬底上生长了高Al组分势垒层AlGaN/GaNHEMT结构.用三晶X射线衍射分析得到AlGaN势垒层的Al组分约为43%,异质结构晶体质量较高,界面比较光滑.变温霍尔测量显示此结构具有良好的电学性能,室温时电子迁移率和电子浓度分别高达1246cm2/(V·s)和1.429×1013cm-2,二者的乘积为1.8×1016V-1·s-1.用此材料研制的器件,直流特性得到了提高,最大漏极输出电流为1.0A/mm,非本征跨导为218mS/mm.结果表明,提高AlGaN势垒层Al的组分有助于提高AlGaN/GaNHEMT结构材料的电学性能和器件性能.

双极RF功率管的深阱结终端

给出了双极 RF功率管新的深阱结终端结构 .模拟分析表明 ,具有优化宽度、优化深度且填充绝缘介质的深阱结终端结构能使雪崩击穿电压提高到理想值的 95 %以上 .实验结果表明 ,深阱结终端结构器件 DCT2 6 0的BVCBO为理想值的 94 % ,比传统终端结构器件高 14 % ;与传统结构相比 ,在不减小散热面积的情况下 ,该结构还减小集电结面积和漏电流 ,器件的截止频率提高 33% ,功率增益提高 1d

跳频数据链干扰对消系统射频前端设计优化

干扰对消是主动方式的干扰管理方法,干扰对消的核心思想是利用干扰源来消除干扰,针对高速跳频系统抗干扰系统采用分离式方法设计干扰对消系统,需要定制化的射频前端设计。针对高速跳频系统抗干扰系统的抗干扰抑制需求,从信号取样、射频接入、对消方式和控制接口4个方面分析跳频数据链干扰对消系统的工作流程,设计主控天线前端电路的直通单元和射频前端,结合模数转换(analog-to-digital conversion,AD)底噪和干扰信号峰均比的影响,计算噪声功率密度和噪声功率,分析射频前端参数影响跳频数据链灵敏度和干扰对消能力上限的约束条件,最后给出射频前端系统增益和信号带宽参数影响跳频数据链干扰对消系统的优化分析。