Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal application...Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.展开更多
Magnetic resonance image quality and patient safety have been the focus of engineering and research ever since the invention of equipment in the early 1970s.In high field(or ultrahigh field)MRI systems,the emerging te...Magnetic resonance image quality and patient safety have been the focus of engineering and research ever since the invention of equipment in the early 1970s.In high field(or ultrahigh field)MRI systems,the emerging techniques induced by B1 field challenges have promoted various potential solutions.This paper describes the relationship between RF power and B1þfield performance,and the overall requirements considered in RF subsystem design.The design of the RF in the MR system is systematically summarized,including the entire transmission chain,sequence algorithm and RF pulse design,and the probabilities for improvement and optimization in the system design are indicated.At the same time,the radio frequency related issues of the human whole-body 7 T MR and animal MR systems are discussed,especially the promising future showed by the technologies such as radio frequency parallel transmission technology in the ultrahigh field.展开更多
The design and performance of radio frequency (RF) excited partial Z-fold waveguide CO_2 laser with two channels are exposed. The length of the partial Z-fold channel is 3×460 mm and that of the single channel is...The design and performance of radio frequency (RF) excited partial Z-fold waveguide CO_2 laser with two channels are exposed. The length of the partial Z-fold channel is 3×460 mm and that of the single channel is 460 mm. The electrodes for the two channels are common and excited by a same RF source. According to our analysis, this kind of structure can greatly improve the laser offset frequency stability. In the experiments, we studied the variation of laser output power with gas pressure for two different channels. The maximum laser output power is about 23 W for the partial Z-fold channel and about 6 W for the single channel.展开更多
A prototype RF power source has been built to supply high RF power to a ferrite-loaded cavity, which is a part of R&D of the Rapid Cycling Synchrotron of China Spallation Neutron Source (CSNS/RCS). A direct fast R...A prototype RF power source has been built to supply high RF power to a ferrite-loaded cavity, which is a part of R&D of the Rapid Cycling Synchrotron of China Spallation Neutron Source (CSNS/RCS). A direct fast RF feedback amplifier, a 4:1 impedance transformer and auto tuning grid were locally located to compensate the heavy beam loading of CSNS/RCS. Design and commissioning of the RF power source is discussed here, also with some advice on system improvement.展开更多
Hα(Balmer-alpha), Hβ (Balmer-beta) and Hγ (Balmer-gamma) spectral line inten- sities in atomic hydrogen plasma are investigated by using a high-power RF source. The intensities of the Hα, Hβ and Hγ spectra...Hα(Balmer-alpha), Hβ (Balmer-beta) and Hγ (Balmer-gamma) spectral line inten- sities in atomic hydrogen plasma are investigated by using a high-power RF source. The intensities of the Hα, Hβ and Hγ spectral lines are detected by increasing the input power (0-6 kW) of ICPs (inductively coupled plasmas). With the increase of net input power, the intensity of Hα im- proves rapidly (0-2 kW), and then reaches its dynamic equilibrium; the intensities of Hβ can be divided into three processes: obvious increase (0-2 kW), rapid increase (2-4 kW), almost constant (4-6 kW); while the intensities of Hγ increase very slowly. The energy levels of the excited hydro- gen atoms and the splitting energy levels produced by an obvious Stark effect play an important role in the results.展开更多
An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were de...An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R^D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.展开更多
A large-area high-power radio-frequency(RF) driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute(KAERI). The RF ion source consists of a dr...A large-area high-power radio-frequency(RF) driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute(KAERI). The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.展开更多
A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current(Ids) simulation of an Al Ga N/Ga N-based(gallium nitride) high electron mobility transistor(A...A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current(Ids) simulation of an Al Ga N/Ga N-based(gallium nitride) high electron mobility transistor(Al Ga N/Ga N-based HEMT) at high power operation. Since an accurate radio frequency(RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor(HEMT)nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency(PAE) at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.展开更多
针对融入译码转发中继技术的混合电力线通信(Power Line Communication, PLC)与射频(Radio-Frequency, RF)传输系统,首先提出了一种基于门限判断的多用户机会调度方案。其次,在PLC和RF链路信道衰落分别服从对数正态分布和相关莱斯分布...针对融入译码转发中继技术的混合电力线通信(Power Line Communication, PLC)与射频(Radio-Frequency, RF)传输系统,首先提出了一种基于门限判断的多用户机会调度方案。其次,在PLC和RF链路信道衰落分别服从对数正态分布和相关莱斯分布的条件下,推导出采用所提调度方案的PLC/RF系统中断概率和归一化平均反馈负载的闭合表达式。接着,还通过分析高信噪比条件下系统中断概率的渐进性能,得到系统分集度和阵列增益的简单闭合表达式。最后,计算机仿真不仅验证了理论分析的正确性,而且进一步揭示了所提方案能够在尽量减少反馈负载的同时获得较优的中断性能,从而为实际的系统设计提供参考和依据。展开更多
Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level a...Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.展开更多
基金Project supported by the National Key Research and Development Project of China (Grant No.2021YFB3602404)part by the National Natural Science Foundation of China (Grant Nos.61904135 and 62234009)+4 种基金the Key R&D Program of Guangzhou (Grant No.202103020002)Wuhu and Xidian University special fund for industry-university-research cooperation (Grant No.XWYCXY-012021014-HT)the Fundamental Research Funds for the Central Universities (Grant No.XJS221110)the Natural Science Foundation of Shaanxi,China (Grant No.2022JM-377)the Innovation Fund of Xidian University (Grant No.YJSJ23019)。
文摘Improved radio-frequency(RF)power performance of InAlN/GaN high electron mobility transistor(HEMT)is achieved by optimizing the rapid thermal annealing(RTA)process for high-performance low-voltage terminal applications.By optimizing the RTA temperature and time,the optimal annealing condition is found to enable low parasitic resistance and thus a high-performance device.Besides,compared with the non-optimized RTA HEMT,the optimized one demonstrates smoother ohmic metal surface morphology and better heterojunction quality including the less degraded heterojunction sheet resistance and clearer heterojunction interfaces as well as negligible material out-diffusion from the barrier to the channel and buffer.Benefiting from the lowered parasitic resistance,improved maximum output current density of 2279 mA·mm^(-1)and higher peak extrinsic transconductance of 526 mS·mm^(-1)are obtained for the optimized RTA HEMT.In addition,due to the superior heterojunction quality,the optimized HEMT shows reduced off-state leakage current of 7×10^(-3)mA·mm^(-1)and suppressed current collapse of only 4%,compared with those of 1×10^(-1)mA·mm^(-1)and 15%for the non-optimized one.At 8 GHz and V_(DS)of 6 V,a significantly improved power-added efficiency of 62%and output power density of 0.71 W·mm^(-1)are achieved for the optimized HEMT,as the result of the improvement in output current,knee voltage,off-state leakage current,and current collapse,which reveals the tremendous advantage of the optimized RTA HEMT in high-performance low-voltage terminal applications.
基金The work is supported by Key-Area Research and Development Program of Guangdong Province(grant no.2018B030333001).
文摘Magnetic resonance image quality and patient safety have been the focus of engineering and research ever since the invention of equipment in the early 1970s.In high field(or ultrahigh field)MRI systems,the emerging techniques induced by B1 field challenges have promoted various potential solutions.This paper describes the relationship between RF power and B1þfield performance,and the overall requirements considered in RF subsystem design.The design of the RF in the MR system is systematically summarized,including the entire transmission chain,sequence algorithm and RF pulse design,and the probabilities for improvement and optimization in the system design are indicated.At the same time,the radio frequency related issues of the human whole-body 7 T MR and animal MR systems are discussed,especially the promising future showed by the technologies such as radio frequency parallel transmission technology in the ultrahigh field.
文摘The design and performance of radio frequency (RF) excited partial Z-fold waveguide CO_2 laser with two channels are exposed. The length of the partial Z-fold channel is 3×460 mm and that of the single channel is 460 mm. The electrodes for the two channels are common and excited by a same RF source. According to our analysis, this kind of structure can greatly improve the laser offset frequency stability. In the experiments, we studied the variation of laser output power with gas pressure for two different channels. The maximum laser output power is about 23 W for the partial Z-fold channel and about 6 W for the single channel.
文摘A prototype RF power source has been built to supply high RF power to a ferrite-loaded cavity, which is a part of R&D of the Rapid Cycling Synchrotron of China Spallation Neutron Source (CSNS/RCS). A direct fast RF feedback amplifier, a 4:1 impedance transformer and auto tuning grid were locally located to compensate the heavy beam loading of CSNS/RCS. Design and commissioning of the RF power source is discussed here, also with some advice on system improvement.
基金supported by the National Magnetic Confinement Fusion Science Program of China(Nos.2011GB108011 and 2010GB103001)the Major International(Regional) Project Cooperation and Exchanges(No.11320101005)
文摘Hα(Balmer-alpha), Hβ (Balmer-beta) and Hγ (Balmer-gamma) spectral line inten- sities in atomic hydrogen plasma are investigated by using a high-power RF source. The intensities of the Hα, Hβ and Hγ spectral lines are detected by increasing the input power (0-6 kW) of ICPs (inductively coupled plasmas). With the increase of net input power, the intensity of Hα im- proves rapidly (0-2 kW), and then reaches its dynamic equilibrium; the intensities of Hβ can be divided into three processes: obvious increase (0-2 kW), rapid increase (2-4 kW), almost constant (4-6 kW); while the intensities of Hγ increase very slowly. The energy levels of the excited hydro- gen atoms and the splitting energy levels produced by an obvious Stark effect play an important role in the results.
基金supported by National Magnetic Confinement Fusion Science Program of China (No.2010GB110000)partly by Knowledge Innovation Program of the Chinese Academy of Sciences (No.Y05FCQ1126)partly supported by the Japan Society for the Promotion of Science-Chinese Academy of Sciences (JSPS-CAS) Core University Program on Plasma Physics and Nuclear Fusion
文摘An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R^D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.
基金supported by the Ministry of Science,ICT and Future Planning of the Republic of Korea under the ITER Technology R&D ProgramNational R&D Program Through the National Research Foundation of Korea(NRF)Funded by the Ministry of Science,ICT&Future Planning(NRF-2014M1A7A1A03045372)
文摘A large-area high-power radio-frequency(RF) driven ion source was developed for positive and negative neutral beam injectors at the Korea Atomic Energy Research Institute(KAERI). The RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of high-power RF discharge. Plasma ignition of the ion source is initiated by the injection of argongas without a starter-filament heating, and the argon-gas is then slowly exchanged by the injection of hydrogen-gas to produce pure hydrogen plasmas. The uniformities of the plasma parameter,such as a plasma density and an electron temperature, are measured at the lowest area of the driver region using two RF-compensated electrostatic probes along the direction of the shortand long-dimensions of the driver region. The plasma parameters will be compared with those obtained at the lowest area of the expansion bucket to analyze the plasma expansion properties from the driver region to the expansion region.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204086)
文摘A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current(Ids) simulation of an Al Ga N/Ga N-based(gallium nitride) high electron mobility transistor(Al Ga N/Ga N-based HEMT) at high power operation. Since an accurate radio frequency(RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor(HEMT)nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency(PAE) at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.
文摘针对融入译码转发中继技术的混合电力线通信(Power Line Communication, PLC)与射频(Radio-Frequency, RF)传输系统,首先提出了一种基于门限判断的多用户机会调度方案。其次,在PLC和RF链路信道衰落分别服从对数正态分布和相关莱斯分布的条件下,推导出采用所提调度方案的PLC/RF系统中断概率和归一化平均反馈负载的闭合表达式。接着,还通过分析高信噪比条件下系统中断概率的渐进性能,得到系统分集度和阵列增益的简单闭合表达式。最后,计算机仿真不仅验证了理论分析的正确性,而且进一步揭示了所提方案能够在尽量减少反馈负载的同时获得较优的中断性能,从而为实际的系统设计提供参考和依据。
文摘Theoretical analysis model has been established for CO 2 laser to describe the process of dynamic emission in the electrooptically Q switched laser .The electron excitation and the energy transfer of vibration level and the rotational relaxation of rotational levels are described. The comparison between this model and a set of coupled rat equations model are discussed.