A 0.5–3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS

A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor(FET)structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-d B compression point of 38.5 d Bm at 1.9 GHz,an insertion loss of 0.27 d B/0.33 d B and an isolation of 35 d B/27 d B at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm^2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.

High-performance RF Switch in 0.13 μm RF SOI process

A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.

ANALYSIS AND MEASUREMENT OF LARGE DYNAMIC RANGE RF SWITCH INTER-MODULATION

Radio Frequency (RF) switch circuit is the basic part of microwave devices and systems. The non-linearity distortion figure is necessary in the field of large dynamic range of signal. This letter analyzes the basic switch circuit and its inter-modulation, and studies in detail the measurement methods and systems of RF switch intercept point. It has provided cascaded simulation testing methods, which can accurately measure the PF switch, of which the second or third order intercept point value is above 75dB and 60dB, respectively. As the testing results are consistent with the theoretical analyses, it proves that the validity of the method satisfies the requirements of large scaled linearity measurement in engineering.

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to –5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch – A Review

With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO systems, it a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured opti-cally. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).

RF Switch中减小信号非线性的方法

讨论了harmonic信号非线性成因和改进方法。介绍了当信号达到20dBm量级,封装好的RF Switch芯片管脚之间产生串扰,串扰信号经过了非线性器件,就会造成harmonic。通过将两个diode串联的方法减少通过diode的电流,以及通过RC滤波器,在确保control电路的响应时间满足要求的前提下,尽量做的低频,以提高control端对非线性的抑制。这两种方案同时加入后,可极大的减小大信号下RF信号的harmonics,从而在RF Switch中减小了信号非线性。

一种L~U波段RF MEMS单刀十掷开关的设计

论文提出了一种适用于1GHz~60GHz频段的RF MEMS单刀十掷开关。该开关采用三角形上电极结构,以减小悬臂梁等效弹性系数和闭合接触面积,达到低驱动电压、高隔离度的目的。通过渐进传输线结构,改善阶跃补偿引起的信号损耗问题。仿真结果显示:该单刀十掷开关的驱动电压为13V,在1GHz~60GHz频段范围内,输入端两侧输出端口的插入损耗<2dB,其余八个端口插入损耗≤0.59dB,所有端口隔离度均>30dB。此开关可适用于无线通信系统、雷达系统和仪器测量系统等对射频性能要求高的领域内。

Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

A novel radio frequency （RF） switch device has been successfully fabricated using InGaAs metal- oxide-semiconductor field-effect transistor （MOSFET） technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/ram, a turn-on resistance of 0.72 mx2.mm2 and a drain current on-off （Ionloll） ratio of 1 x 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application.

15158A SP6T RF switch based on IBM SOI CMOS technology

This paper presents the design of single-pole six-throw （SP6T） RF switch with IBM 0.18 #m SOI CMOS technology, which can be widely used in a wireless communication system with its high performance and low cost. The circuit is designed and simulated by using an idea that the total load is divided into six branches and SOI special structures. The insertion loss is less than 0.6 dB, isolation is more than 30 dB, the input power P0.1dB for 0.1 dB compression point is more than 37.5 dBm, IIP3 is more than 70 dBm, the 2nd and the 3rd harmonic compressions are more than 96 dBc, and the control voltage is （＋2.46 V, 0, -2.46 V） in the frequency from 0.1 to 2.7 GHz.

一种X波段三叉H型低电压RF MEMS开关设计

针对射频电路系统所需要的低电压,高隔离度,低插入损耗的应用需求,通过对开关正对面积对驱动电压产生的影响进行探究,设计了一款应用于X波段三叉H型的RF MEMS开关。开关具有六条悬臂梁作为支撑,通过增大上极板面积来降低开关的开启电压。分别使用HFSS和COMSOL对开关的射频性能和机械性能进行仿真,开关最终优化后,在8-12 GHz内,插入损耗为0.26~0.57 dB,隔离度大于31.30 dB。在10.1 GHz达到最优值,插入损耗为0.40 dB,隔离度为50.25 dB。开关电压在11V时就能够实现状态转换,开关的响应时间为18μs。此开关可与射频可重构器件结合,应用于新一代射频微波领域。

A novel low-loss four-bit bandpass filter using RF MEMS switches

This paper details the design and simulation of a novel low-loss four-bit reconfigurable bandpass filter that integrates microelectromechanical system(MEMS)switches and comb resonators.A T-shaped reconfigurable resonator is reconfigured in a'one resonator,multiple MEMS switches'configuration and used to gate the load capacitances of comb resonators so that a multiple-frequency filtering function is realized within the 7-16 GHz frequency range.In addition,the insertion loss of the filter is less than 1.99 dB,the out-of-band rejection is more than 18.30 dB,and the group delay is less than 0.25 ns.On the other hand,the size of this novel filter is only 4.4 mm×2.5 mm×0.4 mm.Our results indicate that this MEMS reconfigurable filter,which can switch 16 central frequency bands through eight switches,achieves a low insertion loss compared to those of traditional MEMS filters.In addition,the advantages of small size are obtained while achieving high integration.

Sensitivity analysis of pull-in voltage for RF MEMS switch based on modified couple stress theory

An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.

减少静电漂移的高可靠RF MEMS开关研究

RF MEMS开关具有制作工艺简单、易于集成等优点。而目前由电介质膜电荷积累造成的静电漂移及频繁机械碰撞导致严重的可靠性问题阻碍了其嵌入终端射频系统稳定性的提高。因此结构上采用电介质悬空薄膜改善电荷积累问题,并对开关机械结构限位实现开关的动态缓冲,降低高频次的机械碰撞损伤。同时依靠凸台触点结构,减少静电漂移。确立了电介质膜充电、开关寿命的理论模型并预测开关的寿命。结果表明,所设计开关寿命超过12900 h。相比已有RF MEMS开关,在两极板间距及金属梁-电介质膜间距分别相等的情况下,所提出的开关结构,寿命分别提高253倍和166倍,极大地改善静电漂移问题。在52.2 GHz工作频率下,隔离度为-41.31 dB,损耗为-0.25 dB,响应时间为50μs,为高性能、高可靠、长寿命射频开关提供了理论模型。

一种基于光刻胶牺牲层的RF MEMS开关制备方法

论文针对RF MEMS开关上电极传统的牺牲层工艺存在工艺兼容性差、释放时热应力大等问题,提出了一种基于光刻胶牺牲层的MEMS开关制备方法。通过采用在氮气环境下进行固化处理的方法,解决了光刻胶作为牺牲层时容易出现的表面褶皱、破裂等问题,同时提高了牺牲层表面的平整度;通过氧等离子体干法刻蚀释放工艺,获得了具有高平整度和低粗糙度的MEMS开关上电极结构。测试结果表明,基于光刻胶牺牲层工艺制备的RF MEMS开关在DC-20GHz频段内性能良好,隔离度均小于-30.0dB,插入损耗均大于-1.0dB。该RF MEMS开关具有良好的应用前景。

Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.

Performance of Double-Pole Four-Throw Double-Gate RF CMOS Switch in 45-nm Technology

In this paper, we have investigated the design parameters of RF CMOS switch, which will be used for the wireless tele-communication systems. A double-pole four-throw double-gate radio-frequency complementary-metal-oxide-semicon- ductor (DP4T DG RF CMOS) switch for operating at the 1 GHz is implemented with 45-nm CMOS process technology. This proposed RF switch is capable to select the data streams from the two antennas for both the transmitting and receiving processes. For the development of this DP4T DG RF CMOS switch we have explored the basic concept of the proposed switch circuit elements required for the radio frequency systems such as drain current, threshold voltage, resonant frequency, return loss, transmission loss, VSWR, resistances, capacitances, and switching speed.

发展中的RF MEMS开关技术

射频MEMS开关是用MEMS技术形成的新的电路元件,与传统的半导体开关器件相比具有插入损耗低、隔离度大、线性度好等优点,将对现有雷达和通信中RF结构产生重大的影响。介绍了射频MEMS开关的工作原理、优化设计,分析了可靠性问题,举例说明了射频MEMS开关的应用,指出了其发展所面临的问题。

低驱动电压k波段电容耦合式RF MEMS开关的设计

设计了一种低驱动电压的电容耦合式射频微机械(RF MEMS)开关。RF MEMS开关采用共面波导传输线,双电极驱动,悬空金属膜采用弹性折叠梁支撑。使用MEMS CAD软件CoventorWare、微波CAD软件HFSS,分别仿真了开关的力学性能和电磁性能,仿真结果表明:开关的驱动电压为2.5 V,满足低驱动电压的设计目标;开关开态的插入损耗约为0.23 dB@20 GHz,关态的隔离度约为18.1 dB@20 GHz。最后给出了这种RF MEMS开关的微制造工艺。

一种低驱动电压的SP4T RF MEMS开关

设计并制备了一种低电压的静电驱动接触式单刀四掷(SP4T)RFMEMS开关。单元开关采用以低应力氮氧化硅(SiON)作为桥膜的双端固定桥式结构,并利用附着的金层形成接触结构。整个SP4T开关包括与50Ω特征阻抗相匹配的共面波导,1个输入端,4个输出端,4个静电驱动的侧拉桥,以及4个驱动引出区(pad)。测试数据表明,开关驱动电压18.8V;插入损耗S21<0.26dB@DC-3GHz,S31<0.46dB@DC-3GHz;隔离度S21>69.5dB@DC-3GHz,S31>69.2dB@DC-3GHz。结果显示,此开关的隔离度在所有输出端有很好的一致性,插损在DC-3GHz的频段内均较小,非常适合低频使用。

一种K波段双桥电容式RF MEMS开关的设计与制作

介绍了一种K波段双桥结构的电容式RFMEMS开关.该开关的结构特点是,以共面波导上的悬空金属膜为双桥结构,并且膜桥的支撑呈折叠弹簧结构.使用AgilentADS软件对该开关进行了设计和优化,结果表明,相比传统电容式单桥开关,该开关隔离度性能得到了很大提高.利用表面微机械工艺,在高阻硅衬底上制备了开关样品.双桥开关的在片测试结果表明:驱动电压为19.5V,“开”态的插入损耗约1.6dB@19.6GHz,“关”态的隔离度约46.0dB@19.6GHz.