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High Power RF Transmitters for ICRF Applications on EAST
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作者 毛玉周 袁帅 +9 位作者 赵燕平 张新军 陈根 R.KUMAZAWA 程艳 王磊 琚松青 邓旭 秦成明 杨磊 《Plasma Science and Technology》 SCIE EI CAS CSCD 2013年第3期261-265,共5页
An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were de... An Ion Cyclotron Range of Frequency (ICRF) system with a radio frequency (RF) power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak (EAST). High RF power transmitters were designed as a part of the research and development (R^D) for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter: the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply (HVPS). Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved. 展开更多
关键词 power amplifier rf transmitter ICrf system EAST
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A-3 dBm RF transmitter front-end for 802.11g application
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作者 赵锦鑫 颜峻 石寅 《Journal of Semiconductors》 EI CAS CSCD 2013年第4期69-75,共7页
A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 ... A 2.4 GHz, direct-conversion RF transmitter front-end with an up converter and PA driver is fabricated in a 0.13/zm CMOS process for the reliable transmission of 54 Mb/s OFDM signals. The front-end output power is -3 dBm while the corresponding EVM is -27 dB which is necessary for the 802.11g standard of EVM at-25 dB. With the adopted gain control strategy the output power changes from -14.3 to -3.7 dBm with every step 0.8 dB (20%) which covers the gain variation due to working temperature and process. A power detector indicates the output power and delivers a voltage to the baseband to control the output power. 展开更多
关键词 802.11 g rf transmitter front-end up converter rfVGA PA driver EVM
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