A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This...A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.展开更多
A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s ...A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.展开更多
衬底寄生网络建模和参数提取,对RF SOI MOSFET器件输出特性的模拟有着非常重要的影响。考虑BOX层引入的体区和Si衬底隔离,将源、体和衬底短接接地,测试栅、漏二端口S参数的传统测试结构,无法准确区分衬底网络影响。提出一种改进的测试结...衬底寄生网络建模和参数提取,对RF SOI MOSFET器件输出特性的模拟有着非常重要的影响。考虑BOX层引入的体区和Si衬底隔离,将源、体和衬底短接接地,测试栅、漏二端口S参数的传统测试结构,无法准确区分衬底网络影响。提出一种改进的测试结构,通过把SOI MOSFET的漏和源短接为信号输出端、栅为信号输入端,测试栅、漏/源短接二端口S参数的方法,把衬底寄生在二端口S参数中直接体现出来,并开发出一种解析提取衬底网络模型参数的方法,支持SOI MOSFET衬底网络模型的精确建立。采用该方法对一组不同栅指数目的SOI MOSFET进行建模,测量和模型仿真所得S参数在20 GHz频段范围内得到很好吻合。展开更多
在桥式射频电源中接入3次谐波谐振电路,用于改善MOSFET的快速开关状态。通过在桥式逆变器的交流端连接3次谐波谐振电路,将3次类正弦波电流叠加于正弦负载电流上,从而实现对MOSFET输出电容的快速充电或放电,使MOSFET适用于更高的工作频...在桥式射频电源中接入3次谐波谐振电路,用于改善MOSFET的快速开关状态。通过在桥式逆变器的交流端连接3次谐波谐振电路,将3次类正弦波电流叠加于正弦负载电流上,从而实现对MOSFET输出电容的快速充电或放电,使MOSFET适用于更高的工作频率。对2 MHz/2 k W射频电源进行仿真分析,其结果表明:接入3次谐波谐振电路不仅减少了MOSFET的换向时间,而且降低了MOSFET的开关损耗;同时,死区和3次谐波谐振电路品质因数对电路的影响分析,验证了3次谐波谐振电路的可行性和有效性。展开更多
介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器。在工作频段内,功率放大器增益大于23 d B,输入端口的匹配...介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器。在工作频段内,功率放大器增益大于23 d B,输入端口的匹配网络的回波损耗S11优于-19 d B。实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值。展开更多
基金Project supported by the National Natural Science Foundation of China(No.60706002)the Scientific and Technologic Cooperation Foundation of the Yangtze River Delta Area of China(Nos.08515810103,2008C16017)
文摘A novel scalable model for multi-finger RF MOSFETs modeling is presented.All the parasitic components, including gate resistance,substrate resistance and wiring capacitance,are directly determined from the layout.This model is further verified using a standard 0.13μm RF CMOS process with nMOSFETs of different numbers of gate fingers,with the per gate width fixed at 2.5μm and the gate length at 0.13μm.Excellent agreement between measured and simulated S-parameters from 100 MHz to 20 GHz demonstrate the validity of this model.
基金supported by the National Natural Science Foundation of China(No.60706002)the Scientific and Technologic Cooperation Foundation of Yangtze River Delta Area of China(Nos.08515810103,2008C16017).
文摘A novel empirical model for large-signal modeling of an RF-MOSFET is proposed. The proposed model is validated in the DC, AC, small-signal and large-signal characteristics of a 32-finger nMOSFET fabricated in SMIC＇s 0.18 μm RF CMOS technology. The power dissipation caused by self-heating is described. Excellent agreement is achieved between simulation and measurement for DC, S-parameters （50 MHz-40 GHz）, and power characteristics, which shows that our model is accurate and reliable.
文摘在桥式射频电源中接入3次谐波谐振电路,用于改善MOSFET的快速开关状态。通过在桥式逆变器的交流端连接3次谐波谐振电路,将3次类正弦波电流叠加于正弦负载电流上,从而实现对MOSFET输出电容的快速充电或放电,使MOSFET适用于更高的工作频率。对2 MHz/2 k W射频电源进行仿真分析,其结果表明:接入3次谐波谐振电路不仅减少了MOSFET的换向时间,而且降低了MOSFET的开关损耗;同时,死区和3次谐波谐振电路品质因数对电路的影响分析,验证了3次谐波谐振电路的可行性和有效性。
文摘介绍了如何利用场效应管的小信号散射(S)参数设计射频功率放大器,并采用此设计方法,选用场效应管,设计了一种工作在160 MHz频段的金属氧化物半导体场效应管(MOSFET)功率放大器。在工作频段内,功率放大器增益大于23 d B,输入端口的匹配网络的回波损耗S11优于-19 d B。实例证明:该设计方法仿真简单,易于实现,具有重要的工程应用价值。
