Microstructure and properties of indium tin oxide thin films deposited by RF-magnetron sputtering

Tin-doped indium oxide （ITO） thin films were prepared using conventional radio frequency （RF） planar magnetron sputtering equipped with IR irradiation using a ceramic target of In2O3/SnO2 with a mass ratio of 1：1 at various IR irradiation temperatures T1 （from room temperature to 400℃）. The refractive index, deposited ratio, and resistivity are functions of the sputtering Ar gas pressure. The microstructure of ITO thin films is related to IR T1, the crystalline seeds appear at T1= 300℃, and the films are amorphous at the temperature ranging from 27℃ to 400℃. AFM investigation shows that the roughness value of peak-valley of ITO thin film （Rp-v） and the surface microstructure of rio thin films have a close relation with T1. The IR irradiation results in a widening value of band-gap energy due to Burstein-Moss effect and the maximum visible transmittance shifts toward a shorter wavelength along with a decrease in the film＇s refractive index. The plasma wavelength and the refractive index of ITO thin films are relative to the T1. XPS investigation shows that the photoelectrolytic properties can be deteriorated by the sub-oxides. The deterioration can be decreased by increasing the oxygen flow rote （fo2）, and the mole ratio of Sn/In in the samples reduces with an increase info2.

In vitro Cyto and Blood Compatibility of Titanium Containing Diamond-Like Carbon Prepared by Hybrid Sputtering Method

In recent years, diamond-like carbon films （DLC） have been given more attention in research in the biomedical industry due to their potential application as surface coating on biomedical materials such as metals and polymer substrates. There are many ways to prepare metal containing DLC films deposited on polymeric film substrates, such as coatings from car- bonaceous precursors and some means that incorporate other elements. In this study, we in- vestigated both the surface and biocompatible properties of titanium containing DLC （Ti-DLC） films. The Ti-DLC films were prepared on the surface of poly （ethylene terephthalate） （PET） film as a function of the deposition power level using reactive sputtering technique. The films＇ hydrophilicity was studied by contact angle and surface energy tests. Their surface morphology was studied by scanning electron microscopy （SEM） and atomic force microscopy （AFM）. Their elemental chemical composition was analyzed using energy dispersive X-spectra （EDX） and X-ray photoelectron spectroscopy （XPS）. Their blood and cell compatibility was studied by in vitro tests, including tests on platelet adhesion, thrombus formation, whole blood clotting time and osteoblast cell compatibility. Significant changes in the morphological and chemical composition of the Ti-DLC films were observed and found to be a function of the deposition level. These morphological and chemical changes reduced the interfacial tension between Ti-DLC and blood proteins as well as resisted the adhesion and activation of platelets on the surface of the Ti-DLC films. The cell compatibility results exhibited significant growth of osteoblast cells on the surface of Ti incorporated DLC film compared with that of DLC film surface.

Effect of substrate rotation speed on structure and properties of Al-doped ZnO thin films prepared by rf-sputtering

Al-doped ZnO(AZO)thin films were deposited on glass substrates by rf-sputtering at room temperature.The effects of substrate rotation speed(ωS)on the morphological,structural,optical and electrical properties were investigated.SEM transversal images show that the substrate rotation produces dense columnar structures which were found to be better defined under substrate rotation.AFM images show that the surface particles of the samples formed under substrate rotation are smaller and denser than those of a stationary one,leading to smaller grain sizes.XRD results show that all films have hexagonal wurtzite structure and preferred c-axis orientation with a tensile stress along the c-axis.The average optical transmittance was above90%in UV-Vis region.The lowest resistivity value(8.5×10?3Ω·cm)was achieved atωS=0r/min,with a carrier concentration of1.8×1020cm?3,and a Hall mobility of4.19cm2/(V·s).For all other samples,the substrate rotation induced changes in the carrier concentration and Hall mobility which resulted in the increasing of electrical resistivity.These results indicate that the morphology,structure,optical and electrical properties of the AZO thin films are strongly affected by the substrate rotation speed.

Surface Modification of NaCl Particles with Metal Films Using the Polygonal Barrel-Sputtering Method

In this study, the surfaces of NaCl particles were modified with metal films using the polygonal barrel-sputtering method. When Pt was sputtered on NaCl particles, the individual particles changed from white to metallic. Characterization of the treated samples indicated that thin Pt metal films were uniformly deposited on the NaCl particles. Immersion of the treated NaCl particles in water revealed that they floated to the surface of the water with the increase in the immersion time, although their original cubic shapes remained unchanged. The floating phenomenon of the Pt-coated NaCl particles, as mentioned above, suggests that NaCl was dissolved by the permeation of water through invisible defects such as grain boundaries in the Pt films, leading to the formation of hollow particle-like materials. It should be noted that uniform film deposition on the NaCl particles could also be achieved by sputtering with Au or Cu. Based on the obtained results, our sputtering method allows uniform surface modification of water-soluble and water-reactive powders that cannot be treated by conventional wet process using water.

Synthesis and Characterization of Copper Doped Zinc Oxide Thin Films Deposited by RF/DC Sputtering Technique

Undoped and copper(Cu)doped zinc oxide(Zn_(1-x)Cu_(x)O,where x=0-0.065)nano crystal thin films have been deposited on glass substrate via RF/DC reactive co-sputtering technique.The aim of this work is to investigate the crystal structure of ZnO and Cu doped ZnO thin films and also study the effect of Cu doping on optical band gap of ZnO thin films.The identification and confirmation of the crystallinity,film thickness and surface morphology of the nano range thin films are confirmed by using X-ray diffractometer(XRD),scanning electron microscope and atomic force microscope.The XRD peak at a diffractive angle of 34.44°and Miller indices at(002)confirms the ZnO thin films.Crystallite size of undoped ZnO thin films is 27 nm and decreases from 27 nm to 22 nm with increasing the atomic fraction of Cu(x_(Cu))in the ZnO thin films from 0 to 6.5%respectively,which is calculated from XRD(002)peaks.The different bonding information of all deposited films was investigated by Fourier transform infrared spectrometer in the range of wave number between 400 cm^(-1) to 4000 cm^(-1).Optical band gap energy of all deposited thin films was analyzed by ultraviolet visible spectrophotometer,which varies from 3.35 eV to 3.19 eV with the increase of x_(Cu) from 0 to 6.5%respectively.Urbach energy of the deposited thin films increases from 115 meV to 228 meV with the increase of x_(Cu) from 0 to 6.5% respectively.

Electrical and Structural Properties of Radio Frequency （RF） Sputtered ZnO Thin Film at Low Substrate Temperature

Transparent conducting ZnO （zinc oxide） thin films with an average thickness of 130 nm were deposited on glass substrates at substrate temperature of 373 K by RF （radio frequency） sputtering and annealed in nitrogen atmosphere （samples S1, S2 and S3） and in open air （samples S5, S6 and S7） at 423 K, 573 K and 723 K for 60 minutes. S4 is reserved as the reference or the as-deposited sample （sample that has not been annealed）. The electrical and structural properties of the films were investigated using four-point probe, XRD （X-ray diffraction） and SEM （scanning electron microscopy）. The as-deposited sample （S4 or sample that has not been annealed） was found to have a resistivity of 11.0 ×10^-4 Ω·cm, while that of the annealed samples lies between 6.0 × 10^-4 Ω·cm and 3.5 × 10^-4 Ω·cm. The XRD analysis of the annealed films shows that they are crystalline with preferential orientation of （002） plane. Other data analyzed from the samples includes the grain size （1.5059 -1.8898 μm）, strain （1.77%-0.11%）, residual stress （4.13-0.26 GPa） and the dislocation density （0.4409/m2-0.2800/m2）.

基于磁控溅射法生长hBN薄膜的MSM型真空紫外探测器(特邀)

针对目前大面积高质量六方氮化硼(hBN)薄膜的制备与转移存在均匀性、晶粒控制、无损转移等问题,采用射频磁控溅射技术成功在2英寸硅和蓝宝石介电衬底上沉积了hBN薄膜,拉曼光谱、X射线光电子能谱表征证实了薄膜具有明显的hBN特征。制备了hBN基金属-半导体-金属型光电探测器,并探究了电极材料、薄膜厚度以及叉指电极宽度和间距对探测性能的影响。优选出的Ni电极探测器具有极低的暗电流(<3 pA@100 V),对185 nm波长光具有明显光响应,响应度和比探测率分别为2.769 mA/W和2.969×10^(9)Jones。

Effect of grain size on ferroelectric and dielectric properties of Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films prepared by rf-magnetron sputtering

Bi_(3.25)La_(0.75)Ti_(3)O_(12)(BLT)thin films are promising materials used in non-volatile memories.In this work,BLT films were deposited on Pt(111)/Ti/SiO_(2)/Si substrates by rf-magnetron sputtering method followed by annealing treatments.The microstructures of BLT thin films were investigated via X-ray diffraction(XRD),scanning electron microscopy(SEM)and atomic force microscopy(AFM).With the increase in annealing temperature,the grain size increased significantly and the preferred crystalline orientation changed.A well-saturated hysteresis loop with a superior remnant polarization of 15.4μC/cm^(2) was obtained for BLT thin films annealed at 700°C.The results show that the dielectric constant decreased with the increase in grain sizes.

磁控溅射技术新进展及应用

主要简介了磁控溅射技术的基本原理、基本装置、近年来出现的新技术(多靶磁控溅射技术、磁场扫描法、非平衡磁控溅射、脉冲磁控溅射技术、磁控溅射技术与其它成膜技术相结合等),以及国内外利用磁控溅射技术在多层膜和化合物薄膜制备方面取得的一些成果。

二氧化钛纳米微粒膜光电化学行为的研究

利用不同的制备方法制备出二氧化钛纳米微粒膜，对二氧化钛纳米微粒膜的光电化学材为和产生的机理进行了研究．结果表明；二氧化钛纳米微粒膜除了具有传统半导体的光电化学性质外，还具有不同于传统半导体的光电化学性质这主要是出膜的微粒性引起的，可综合传统半导体和胶粒半导体两种模型来加以解释。

射频反应磁控溅射制备氧化铬薄膜技术及性能

研究了采用射频反应溅射方法制备氧化铬耐磨镀层的技术和薄膜的性能.结果表 明,采用金属靶材进行射频反应溅射时,由于靶材与反应气体的反应,会出现两种溅射模式, 即金属态溅射和非金属态溅射,非金属态溅射模式的沉积速率很低.氧化铬薄膜的硬度主要 决定于薄膜中Cr2O3含量,在供氧量不足时会生成低硬度的CrO,制备高硬度氧化铬薄膜需要 采用尽可能高的氧流量进行溅射.采用在基片附近局域供氧,可以实现高溅射速率下制备出 高硬度的氧化铬薄膜.

在Si(111)上磁控溅射碳化硅薄膜的H_2退火效应

用射频磁控溅射法在常温硅衬底上制备了碳化硅薄膜并研究了氢退火对薄膜的影响 .用傅里叶红外透射谱(FTIR)、X射线衍射 (XRD)、X光电子能谱 (XPS)、扫描电镜 (SEM)及原子力显微镜 (AFM)对薄膜样品进行了结构、组分和形貌分析 .结果表明 :高温退火后 Si C膜的晶化程度明显提高 。

溅射法制备InSb薄膜工艺探索——In与Sb的原子比问题

介绍一种基于原子比为 1:1的InSb靶制备原子比为 1:1的InSb薄膜的方法 ,实验结果表明 。

磁控溅射法制备金团簇纳米颗粒及性能表征

采用磁控溅射法制备金团簇纳米颗粒,用透射电镜(TEM)、X射线衍射(XRD)、紫外可见光分光光度计(UV-Vis)和X射线光电子能谱(XPS)等分析手段对其表征,研究了金团簇纳米颗粒的形貌、颗粒度、结构、光吸收性质及物质成份。研究结果表明:制备的金团簇纳米颗粒呈球形,平均粒径在10 nm左右,粒径分布均匀,无团聚、氧化现象,颗粒的结构为面心立方。在519 nm处出现团簇颗粒的表面等离子共振吸收峰,测试得到Au(4f7/2)和Au(4f5/2)电子的结合能分别为83.3 eV和86.9 eV,并且没有出现金的氧化产物。

卫星激光防护薄膜窗口的设计与制备技术研究

当前反卫星激光武器发展迅猛,迫切需要研究和发展卫星的激光防护技术,以增强卫星在空间的生存与防护能力。本文采用可见光-近红外透明和中波吸收的玻璃基底与线性激光防护薄膜相结合的设计方法,在玻璃基板一面设计分光膜,实现1.315μm波长的反射和0.5~0.8μm、1.55μm波段的增透,在玻璃基板另一面设计双波段减反射膜,实现0.5~0.8μm和1.55μm波段的增透。采用离子束溅射沉积技术,实现了激光防护窗口薄膜的制备,在0.5~0.8μm的平均透过率大于96%,1.55μm的透过率大于98%,1.315μm的透过率小于0.1%,在2.7μm的透过率为30%,在3.8μm的透过率为1.1%。实验结果表明,该方法实现了可见光-近红外-中红外波段激光防护窗口的制备,对于卫星平台防护激光武器具有重要作用。

V含量对TaVN复合膜微结构、力学性能和摩擦性能的影响

采用磁控溅射仪制备了一系列不同V含量的TaVN复合膜,利用X射线衍射仪研究复合膜以及磨痕的相组成,利用纳米压痕仪表征复合膜的硬度,采用高温摩擦磨损实验机研究了复合膜的室温和高温摩擦性能。结果表明:TaVN复合膜的微结构为面心立方结构,随着V含量的增加,衍射峰择优取向由(200)转变为(111);TaVN薄膜的显微硬度随着V含量增加,先增加后降低,在V含量为18.25at%时,显微硬度达到最大值,为32.3 GPa;在常温下,TaVN复合膜的摩擦系数随着V含量的增加而降低;当温度从室温升高到800℃,薄膜的摩擦系数先升高后降低。采用晶体化学理论讨论了TaVN复合膜和TaN单层膜在高温下的摩擦机理。

ZnS薄膜的溅射沉积及其XPS研究

用Ａｒ＋束溅射沉积技术在ＨｇＣｄＴｅ表面实现了ＺｎＳ的低温沉积．用Ｘ射线光电子能借（ＸＰＳ）对上述ＺｎＳ薄膜以及热蒸发ＺｎＳ薄膜中的Ｚｎ、Ｓ元素的化学环境进行了对比实验研究．实验表明：离子束溅射沉积ＺｎＳ薄膜具有很好的组份均匀性，未探测到元素Ｚｎ、Ｓ的沉积．

透明电极薄膜的制备及其电阻率测量普通物理实验

介绍了如何把“透明电极薄膜的制备及其电阻率测量”的实验引入到普通物理实验教学中，用简单的直流溅射镀膜仪制备不同厚度的金属氧化物透明电极薄膜（ZnO：Al薄膜），并用四探针测量了它们的电阻率。该实验是对已经在北京科技大学国家工科物理基础课程教学基地开设的大学生普通物理实验内容的新扩充。

溅射后退火反应法制备GaN薄膜的结构与发光性质

报道了用溅射后退火反应法在 Ga As (110 )衬底上制备 Ga N薄膜 .XRD、XPS、TEM测量结果表明该方法制备的 Ga N是沿 c轴方向生长的六角纤锌矿结构的多晶薄膜 .PL测量结果发现了位于 36 8nm处的室温光致发光峰 .

平面磁控溅射薄膜厚度均匀性的研究概述

在平面磁控溅射镀膜系统中,薄膜厚度均匀性作为衡量薄膜质量和成膜系统性能的一项重要指标,得到了国内外学者们的广泛研究。本文以膜厚分布的理论模型为出发点,从工艺条件及模型参数两个方面,对靶与基片的位置关系、基片的运动方式、靶材的形状、溅射功率、工作气压、工作模式等各种影响以及改善薄膜厚度均匀性的因素进行了系统的归纳和陈述。最后对平面磁控溅射镀膜系统膜厚分布的研究进展进行总结并提出了展望。