Zinc sulphide(ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency(RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at75 min....Zinc sulphide(ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency(RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at75 min. The optical, structural, and morphological properties of these thin films have been studied. The optical properties(mainly thickness, refractive index,absorption coefficient, and optical band gap) were investigated by optical transmittance measurements in the wavelength range of ultraviolet-visible-near infrared spectroscopy and spectroscopy infrared with Fourier transform. Fourier(FT-IR) and XRD analysis indicated that all sputtering ZnS films had a single-phase with a preferred orientation along the(111) plane of the zinc sphalerite phase(ZB). The crystallite size ranged from 11.5 to 48.5 nm with RF power getting a maximum of 200 W. UV-visible measurements exhibited that the ZnS film had more than 80% transmission in the visible wavelength region. In addition, it has been observed that the band gap energy of ZnS films is decreased slightly from 3.52 to 3.29 eV, and as the RF power is increased, the film thickness increases with the speed of deposit growth. Scanning electron microscopy observations revealed the types of smooth-surfaced films. The measurements(FT-IR) revealed at wave number1118 and 465.02 cmabsorption bands corresponding to the symmetrical and asymmetric vibration of the Zn-S stretching mode. X-ray reflectometry measurements of ZnS films have shown that the density of the films is(3.9 g/cm~3) close to that of solid ZnS.展开更多
LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks w...LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.展开更多
Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main ...Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2...展开更多
文摘Zinc sulphide(ZnS) thin films have grown on glass and Si substrates by reactive cathodic radio frequency(RF) sputtering. The RF power was varied in the range of 100 to 250 W, while the deposition time is set at75 min. The optical, structural, and morphological properties of these thin films have been studied. The optical properties(mainly thickness, refractive index,absorption coefficient, and optical band gap) were investigated by optical transmittance measurements in the wavelength range of ultraviolet-visible-near infrared spectroscopy and spectroscopy infrared with Fourier transform. Fourier(FT-IR) and XRD analysis indicated that all sputtering ZnS films had a single-phase with a preferred orientation along the(111) plane of the zinc sphalerite phase(ZB). The crystallite size ranged from 11.5 to 48.5 nm with RF power getting a maximum of 200 W. UV-visible measurements exhibited that the ZnS film had more than 80% transmission in the visible wavelength region. In addition, it has been observed that the band gap energy of ZnS films is decreased slightly from 3.52 to 3.29 eV, and as the RF power is increased, the film thickness increases with the speed of deposit growth. Scanning electron microscopy observations revealed the types of smooth-surfaced films. The measurements(FT-IR) revealed at wave number1118 and 465.02 cmabsorption bands corresponding to the symmetrical and asymmetric vibration of the Zn-S stretching mode. X-ray reflectometry measurements of ZnS films have shown that the density of the films is(3.9 g/cm~3) close to that of solid ZnS.
文摘LiMn2O4 thin films are deposited on gold coated polyimide flexible substrates using RF magnetron sputtering technique maintained at a moderate substrate temperature of 300℃. The films exhibited characteristic peaks with predominant (111) orientation representing cubic spinel structure of Fd3m symmetry with an evaluated lattice parameter of 8.199 ?. The surface topography of films exhibited pyramidal shaped grains oriented vertical to the substrate surface with root mean square surface roughness of 90 nm. The Pt/LiMn2O4 electrochemical cell in aqueous region exhibited two step de-insertion and insertion kinetics of Li ion during oxidation and reduction reaction with an initial discharge capacity of 36 μAh?cm_2?μm_1.
基金supported by the National Eleventh Five-year Pre-research Project of China (51302060203)
文摘Europium-doped barium thioaluminate sputtering target was synthesized by powder sintering method and thin film was deposited by radio frequency(RF) sputtering.X-ray diffractometer(XRD) pattern indicated that the main compound of the target was BaAl4S7.Oxygen was the main impurity which led to the formation of BaAl2O4.It was shown that both BaAl4S7 and BaAl2S4 were contained in the as-grown thin films and a 471.7 nm emission peak in the PL spectra appeared due to a combination of BaAl4S7:Eu2+ and BaAl2S4:Eu2...
