Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.

Radiation effects on MOS and bipolar devices by 8 MeV protons,60 MeV Br ions and 1 MeV electrons

The radiation effects of the metal-oxide-semiconductor （MOS） and the bipolar devices are characterised using 8 MeV protons, 60 MeV Br ions and 1 MeV electrons. Key parameters are measured in-situ and compared for the devices. The ionising and nonionising energy losses of incident particles are calculated using the Geant4 and the stopping and range of ions in matter code. The results of the experiment and energy loss calculation for different particles show that different incident particles may give different contributions to MOS and bipolar devices. The irradiation particles, which cause a larger displacement dose within the same chip depth of bipolar devices at a given total dose, would generate more severe damage to the voltage parameters of the bipolar devices. On the contrary, the irradiation particles, which cause larger ionising damage in the gate oxide, would generate more severe damage to MOS devices. In this investigation, we attempt to analyse the sensitivity to radiation damage of the different parameter of the MOS and bipolar devices by comparing the irradiation experimental data and the calculated results using Geant4 and SRIM code.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Radiation Effects on the Immunological Functions and Membranes of Alveolar Macrophages of Rats

Alveolar macrophages (AM) from BCG activated Wistar rat were irradiated with different doses of Gamma rays in vitro. The effects of radiation on their immunological functions and membrane damage were studied. The non-specific cytotoxicity and specific phagocytosis of AM irradiated with dose of 0, 100, 300 and 500 Gy decreased with the increase in dose. The relative fractions of Lactate Dehydrogenase and Beta-glucuronidase (β-glu) activity in supernatant increased with the increase in dose. There was a correlation between the suppression of immunological functions and the degree of damage of cytoplasmic and lysosomal membranes of AM after irradiation. Na2SeO3, a protective agent of cell membranes, alleviated this effect on the suppressive cytotoxicity indices of irradiated AM.

2 GeV Electron Beam Irradiation Effects in Advanced Metallic Glasses

Six amorphous alloys (Alloy 1: Fe56Co24Nb4B13Si2Cu1, Alloy 2: Fe68.5Co5Nb3Cu1Si15.5B7, Alloy 3: Fe75.3Ni0.8Cr0.9Si8.7B14.3, Alloy 4: Fe56Co24Cr10Nb4B3Si1Cu2, Alloy 5: Fe72.9Nb3Cu1Si16.2B6.9, Alloy 6: Fe83.3Si8.6Nb5.5B1.4Cu1.2) were selected in terms of their composition and magnetostriction constants and uniformly irradiated in a high radiation environment in Hall A of the Thomas Jefferson National Accelerator Facility. The 2 GeV electron beam irradiation-induced effects were characterized by Mӧssbauer spectroscopy. The microstructural changes were related to the evolution of the hyperfine magnetic field distributions and isomer shifts. In particular, the occurrence of stress centers in the amorphous materials was evidenced.

Simulation of the Ecosystem Productivity Responses to Aerosol Diffuse Radiation Fertilization Effects over the Pan-Arctic during 2001–19

The pan-Arctic is confronted with air pollution transported from lower latitudes.Observations have shown that aerosols help increase plant photosynthesis through the diffuse radiation fertilization effects(DRFEs).While such DRFEs have been explored at low to middle latitudes,the aerosol impacts on pan-Arctic ecosystems and the contributions by anthropogenic and natural emission sources remain less quantified.Here,we perform regional simulations at 0.2o×0.2ousing a well-validated vegetation model(Yale Interactive terrestrial Biosphere,YIBs)in combination with multi-source of observations to quantify the impacts of aerosol DRFEs on the net primary productivity(NPP)in the pan-Arctic during 2001-19.Results show that aerosol DRFEs increase pan-Arctic NPP by 2.19 Pg C(12.8%)yr^(-1)under clear-sky conditions,in which natural and anthropogenic sources contribute to 8.9% and 3.9%,respectively.Under all-sky conditions,such DRFEs are largely dampened by cloud to only 0.26 Pg C(1.24%)yr^(-1),with contributions of 0.65% by natural and 0.59% by anthropogenic species.Natural aerosols cause a positive NPP trend of 0.022% yr^(-1)following the increased fire activities in the pan-Arctic.In contrast,anthropogenic aerosols induce a negative trend of-0.01% yr^(-1)due to reduced emissions from the middle latitudes.Such trends in aerosol DRFEs show a turning point in the year of 2007 with more positive NPP trends by natural aerosols but negative NPP trends by anthropogenic aerosols thereafter.Though affected by modeling uncertainties,this study suggests a likely increasing impact of aerosols on terrestrial ecosystems in the pan-Arctic under global warming.

Analysis of Heat Transport in a Powell-Eyring Fluid with Radiation and Joule Heating Effects via a Similarity Transformation

Heat transfer in an Eyring-Powell fluid that conducts electricity and flows past an exponentially growing sheet is considered.As the sheet is stretched in the x direction,the flow develops in the region with y>0.The problem is tackled through a set of partial differential equations accounting for Magnetohydrodynamics(MHD),radiation and Joule heating effects,which are converted into a set of equivalent ordinary differential equations through a similarity transformation.The converted problem is solved in MATLAB in the framework a fourth order accurate integration scheme.It is found that the thermal relaxation period is inversely proportional to the thickness of the thermal boundary layer,whereas the Eckert-number displays the opposite trend.As this characteristic number grows,the temperature within the channel increases.

Integration and scaling of UV-B radiation effects on plants: the relative sensitivity of growth forms and interspecies interactions

Aims the relative plant type sensitivity and selected community interac-tions under increased UV-B radiation where examined.Specifically,we investigated:(i)if there are differences among growth forms in regard to their sensitivity to UV-B radiation,(ii)if increased UV-B radiation influences the plant competitive balance in plant com-munities and(iii)the response mechanisms of the UV-B radiation-sensitive species that might increase their fitness.Methods to answer our research questions,we used a mechanistic model that,for the first time,integrated the effects of increased UV-B radia-tion from molecular level processes,whole plant growth and devel-opment,and community interactions.Important Findings In the model simulations,species types exhibited different levels of sensitivity to increased UV-B radiation.Summer C3 and C4 annuals showed similar growth inhibition rates,while biennials and winter C3 annuals were the most sensitive.Perennials exhibited inhibitions in growth only if increased UV-B radiation results in increases in metabolic rates.In communities,species sensitive to UV-B radiation may have a competitive disadvantage compared to resistant plant species.But,sensitive species may have a wide array of responses that can increase their fitness and reproductive success in the com-munity,such as,increased secondary metabolites production,changes in timing of emergence and reproduction,and changes in seed size.While individual plants may exhibit significant inhibi-tions in growth and development,in communities,these inhibitions can be mitigated by small morphological and physiological adap-tations.Infrequent or occasional increased UV-B radiation events should not have any lasting effect on the structure of the commu-nity,unless other environmental factors are perturbing the dynamic equilibrium.

Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials

To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation. The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.

Effects of Electromagnetic Radiation on Autophagy and its Regulation

With the ever increasing application of electronic technology, our exposure to artificial electromagnetic energy is also rapidly increasing. Electromagnetic radiation （EMR） is the fourth largest source of pollution, after air, water, and noise.

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

An experimental system is developed for the transient radiation effects testing of an anti-radiation hardened processor. Based on this system, the transient radiation effects in a microprocessor based on SPARC-V8 architecture was investigated. The dose-rate-soft-error index parameters of the processor were determined according to the test results, as were the influences on the function and timing parameters of the processor. The power supply balance is affected, which caused the system to reset and be the main source of soft errors. The results showed the circuit recovery time is primarily determined by the internal PLL, while the core power and the output-low-IO ports are more sensitive to the transient dose rate effect. The power-integrity-hardened design is proposed to mitigate the transient radiation effect.

Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI NMOS） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10^6 rad（Si）. The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

Radiation dose effects on the morphological development of M_(1) generation pea(Pisum sativum)

We irradiated pea seeds with neutrons from a ^(252)Cf source and studied the radiation dose effects on various morphological development parameters during the growth of M_(1) generation peas.We found that in the dose range of 0.51-9.27 Gy,with the increase in neutron-absorbed dose,the morphological development parameters of M_(1) generation peas at the initial seedling stage showed an obvious trend with three fluctuations.With the development of pea,this trend gradually weakened.Further analysis and verification showed that the main trend in the M_(1) generation of pea seeds was an inhibitory effect induced by neutron irradiation and there was a good linear correlation between the inhibitory effect and neutron absorption dose We successfully demonstrated the background removal of mutant plants and defined morphological developmen parameters for peas that match the overall development of plants.Our results will positively impact neutron mutation breeding and automatic agriculture.

Effects of gamma-ray irradiation on electronic and non-electronic equipment of Large Helical Device

In a deuterium operation on the Large Helical Device, the measurement and control equipment placed in the toms hall must survive under an environment of radiation, To study the effects of gamma-ray irradiation on the equipment, an irradiation experiment is performed at the Cobalt-60 irradiation facility of Nagoya University. Transient and permanent effects on a personal computer, media converters, programmable logic controllers, isolation amplifiers, a web camera, optical flow meters, and water sealing gaskets are experimentally surveyed. Transient noise appears on the web camera. Offset of the signal increases with an increase of the integrated dose on the programmable logic controller. The DeviceNet module on the programmable logic controller is broken at the integrated dose of 72 Gy, which is the expected range of the integrated dose of the toms hall. The other equipment can survive under the gamma-ray field in the toms hall.

Machine learning-based analyses for total ionizing dose effects in bipolar junction transistors

Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery approach.The total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated circuits.Currently,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of information.However,it is difficult to utilize these data effectively.In this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different experiments.The results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the data.The trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.

Incident particle range dependence of radiation damage in a power bipolar junction transistor

The characteristic degradations in silicon NPN bipolar junction transistors（BJTs） of type 3DD155 are examined under the irradiations of 25-MeV carbon（C）,40-MeV silicon（Si）,and 40-MeV chlorine（Cl） ions respectively.Different electrical parameters are measured in-situ during the exposure of heavy ions.The experimental data shows that the changes in the reciprocal of the gain variation（（1/β）） of 3DD155 transistors irradiated respectively by 25-MeV C,40-MeV Si,and 40-MeV Cl ions each present a nonlinear behaviour at a low fluence and a linear response at a high fluence.The（1/β） of 3DD155 BJT irradiated by 25-MeV C ions is greatest at a given fluence,a little smaller when the device is irradiated by 40-MeV Si ions,and smallest in the case of the 40-MeV Cl ions irradiation.The measured and calculated results clearly show that the range of heavy ions in the base region of BJT affects the level of radiation damage.

Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

Strong C-C bonds,nanoscale cross-section and low atomic number make single-walled carbon nanotubes(SWCNTs)a potential candidate material for integrated circuits(ICs)applied in outer space.However,very little work combines the simulation calculations with the electrical measurements of SWCNT field-effect transistors(FETs),which limits further understanding on the mechanisms of radiation effects.Here,SWCNT film-based FETs were fabricated to explore the total ionizing dose(TID)and displacement damage effect on the electrical performance under low-energy proton irradiation with different fluences up to 1×1015 p/cm2.Large negative shift of the threshold voltage and obvious decrease of the on-state current verified the TID effect caused in the oxide layer.The stability of the subthreshold swing and the off-state current reveals that the displacement damage caused in the CNT layer is not serious,which proves that the CNT film is radiation-hardened.Specially,according to the simulation,we found the displacement damage caused by protons is different in the source/drain contact area and channel area,leading to varying degrees of change for the contact resistance and sheet resistance.Having analyzed the simulation results and electrical measurements,we explained the low-energy proton irradiation mechanism of the CNT FETs,which is essential for the construction of radiation-hardened CNT film-based ICs for aircrafts.

Effect of bias condition on heavy ion radiation in bipolar junction transistors

The characteristic degradations in a silicon NPN bipolar junction transistor （BJT） of 3DG142 type are examined under irradiation with 40-MeV chlorine （C1） ions under forward, grounded, and reverse bias conditions, respectively. Different electrical parameters are in-situ measured during the exposure under each bias condition. From the experimental data, a larger variation of base current （IB） is observed after irradiation at a given value of base-emitter voJtage （VBE）, while the collector current is slightly affected by irradiation at a given VBE. The gain degradation is affected mostly by the behaviour of the base current. From the experimental data, the variation of current gain in the case of forward bias is much smaller than that in the other conditions. Moreover, for 3DG142 BJT, the current gain degradation in the case of reverse bias is more severe than that in the grounded case at low fluence, while at high fluence, the gain degradation in the reverse bias case becomes smaller than that in the grounded case.

Bulk and surface damages in complementary bipolar junction transistors produced by high dose irradiation

Two complementary types NPN and PNP of bipolar junction transistors （BJTs） were exposed to higll dose of neutrons and gamma rays. The change in the base and collector currents, minority carriers lifetime, and current gain factor/3 with respect to the dose were analyzed. The contributions of the base current according to the defect types were also reported. It was declared that the radiation effect of neutrons was almost similar between the two transistor types, this effect at high dose may decrease the value of/3 to less than one. The Messenger-Spratt equation was used to describe the experimental results in this case. However, the experimental data demonstrated that the effect of gamma rays was generally higher on NPN than PNP transistors. This is mainly attributed to the difference in the behavior of the trapped positive charges in the SiO2 layers. Meanwhile, this difference tends to be small for high gamma dose.