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Calculation of Photo-Ionisation Cross Sections and Radiative Recombination Rate Coefficients for CO and CO^+ Molecules
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作者 Raja DHOUIOUI Philippe TEULET +4 位作者 Yann CRESSAULT Hassen GHALILA Riadh RIAHI Nejm Eddine JAIDANE Zohra BEN LAKHDAR 《Plasma Science and Technology》 SCIE EI CAS CSCD 2014年第11期1013-1019,共7页
A method based upon the weighted total cross section (WTCS) theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO a... A method based upon the weighted total cross section (WTCS) theory is proposed to calculate the photo-ionisation cross sections and the radiative recombination rate coefficients between the fundamental level of CO and the main electronic states of its corresponding ion. Total photo-ionisation cross sections and radiative recombination rate coefficients are determined from the calculation of elementary vibrational photo-ionisation cross sections. Transitions be- tween CO+(X, A and B) and CO(X) are considered. Total photo-ionisation cross sections and recombination coefficients are computed in the temperature interval 500-15000 K. 展开更多
关键词 CO photo-ionisation cross sections radiative recombination rate coefficients
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Comparative Experimental Study on Heat Transfer Characteristics of Building Exterior Surface at High and Low Altitudes
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作者 JIA Yonghong GUO Shurui +5 位作者 LI Jin GUO Lei CHENG Zhu ZHANG Yin YANG Hanyu LONG Enshen 《Journal of Thermal Science》 SCIE EI CAS CSCD 2024年第3期1119-1131,共13页
The external surface heat transfer coefficient of building envelope is one of the important parameters necessary for building energy saving design,but the basic data in high-altitude area are scarce.Therefore,the auth... The external surface heat transfer coefficient of building envelope is one of the important parameters necessary for building energy saving design,but the basic data in high-altitude area are scarce.Therefore,the authors propose a modified measurement method based on the heat balance of a model building,and use the same model building to measure its external surface heat transfer coefficient under outdoor conditions in Chengdu city,China at an altitude of 520 m and Daocheng city at an altitude of 3750 m respectively.The results show that the total heat transfer coefficient(h_(t))of building surface in high-altitude area is reduced by 34.48%.The influence of outdoor wind speed on the convective heat transfer coefficient(h_(c))in high-altitude area is not as significant as that in low-altitude area.The fitting relation between convection heat transfer coefficient and outdoor wind speed is also obtained.Under the same heating power,the average temperature rise of indoor and outdoor air at highaltitude is 41.9%higher than that at low altitude,and the average temperature rise of inner wall is 25.8%higher than that at low altitude.It shows that high-altitude area can create a more comfortable indoor thermal environment than low-altitude area under the same energy consumption condition.It is not appropriate to use the heat transfer characteristics of the exterior surface of buildings in low-altitude area for building energy saving design and related heating equipment selection and system terminal matching design in high-altitude area. 展开更多
关键词 ALTITUDE heat transfer characteristics convective heat transfer coefficient(h_(c)) radiative heat transfer coefficient(h_(r)) external building envelope
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GaN-based LEDs for light communication 被引量:1
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作者 LiXia Zhao ShiChao Zhu +4 位作者 ChunHui Wu Chao Yang ZhiGuo Yu Hua Yang Lei Liu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2016年第10期1-10,共10页
Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current pr... Rapid improvement in the efficiency of GaN-based LEDs not only speed up its applications for general illumination, but offer the possibilities for data transmission. This review is to provide an overview of current progresses of GaN-based LEDs for light communications. The modulation bandwidth of GaN-based LEDs has been first improved by optimizing the LED epilayer structures and the modulation bandwidth of 73 MHz was achieved at the driving current density of 40 A/cm2 by changing the multi-quantum well structures. After that, in order to increase the current density tolerance, different parallel flip-chip micro-LED arrays were fabricated. With a high injected current density of ~7900 A/cm2, a maximum modulation bandwidth of ~227 MHz was obtained with optical power greater than 30 mW. Besides the increase of carrier concentrations, the radiative recombination coefficient B was also enhanced by modifying the photon surrounding environment based on some novel nanostructures such as resonant cavity, surface plasmon, and photonic crystals. The optical 3 dB modulation bandwidth of GaN-based nanostructure LEDs with Ag nanoparticles was enhanced by 2 times compared with GaN-based nanostructure LEDs without Ag nanoparticles.Our results demonstrate that using the QW-SP coupling can effectively help to enhance the carrier spontaneous emission rate and also increase the modulation bandwidth for LEDs, especially for LEDs with high intrinsic IQE. In addition, we discuss the progress of the faster color conversion stimulated by GaN-based LEDs. 展开更多
关键词 GaN-based LEDs modulation bandwidth carrier concentration radiative recombination coefficient
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