Hexagonal GaN micro-ribbons were synthesized through nitriding Ga2O3 films under flowing ammonia. Ga2O3 films were deposited on the Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. X-ray...Hexagonal GaN micro-ribbons were synthesized through nitriding Ga2O3 films under flowing ammonia. Ga2O3 films were deposited on the Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), selected area electron diffraction (SAED); X-ray photo electronic spectrometer (XPS) and photoluminescence (PL) spectroscopy were used to characterize the structure, surface morphology, composition and optical property of the synthesized samples. SEM images show that GaN micro-ribbons with 100-300rim in diameter are randomly distributed on the uniform films. XRD, XPS and SAED analysis suggest the micro-ribbons are polycrystalline GaN with hexagonal structure and preferentially grow in the [001] direction. The PL spectrum has a remarkable blue shift compared with the reported values of bulk GaN, which might be ascribed to quantum confinement effects.展开更多
Hexagonal GaN films were prepared by nitriding Ga_2O_3 films with flowingammonia. Ga_2O_3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.)magnetron sputtering. This paper have investig...Hexagonal GaN films were prepared by nitriding Ga_2O_3 films with flowingammonia. Ga_2O_3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.)magnetron sputtering. This paper have investigated the change of structural properties of GaN filmsnitrided in NH_3 atmosphere at the temperatures of 850, 900, and 950 deg C for 15 min and nitridedat the temperature of 900 deg C for 10, 15, and 20 min, respectively. X-ray diffraction (XRD),scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectronspectroscopy (XPS) were used to analyze the structure, surface morphology and composition ofsynthesized samples. The results reveal that the as-grown films are polycrystalline GaN withhexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained whennitrided at 900 deg C for 15 min.展开更多
文摘Hexagonal GaN micro-ribbons were synthesized through nitriding Ga2O3 films under flowing ammonia. Ga2O3 films were deposited on the Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), selected area electron diffraction (SAED); X-ray photo electronic spectrometer (XPS) and photoluminescence (PL) spectroscopy were used to characterize the structure, surface morphology, composition and optical property of the synthesized samples. SEM images show that GaN micro-ribbons with 100-300rim in diameter are randomly distributed on the uniform films. XRD, XPS and SAED analysis suggest the micro-ribbons are polycrystalline GaN with hexagonal structure and preferentially grow in the [001] direction. The PL spectrum has a remarkable blue shift compared with the reported values of bulk GaN, which might be ascribed to quantum confinement effects.
基金This work was financially supported by the Science Research Foundation of Shandong Jiaotong University (No. Z200503) and the National Natural Science Foundation of China (No. 90301002).
文摘Hexagonal GaN films were prepared by nitriding Ga_2O_3 films with flowingammonia. Ga_2O_3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.)magnetron sputtering. This paper have investigated the change of structural properties of GaN filmsnitrided in NH_3 atmosphere at the temperatures of 850, 900, and 950 deg C for 15 min and nitridedat the temperature of 900 deg C for 10, 15, and 20 min, respectively. X-ray diffraction (XRD),scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectronspectroscopy (XPS) were used to analyze the structure, surface morphology and composition ofsynthesized samples. The results reveal that the as-grown films are polycrystalline GaN withhexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained whennitrided at 900 deg C for 15 min.
