This paper presents an RF receiver of zero-Intermediate Frequency(IF) architecture for Cognitive Radio(CR) communication systems.Zero-IF architecture reduce the image reject filter and IF filter,so it is excellent in ...This paper presents an RF receiver of zero-Intermediate Frequency(IF) architecture for Cognitive Radio(CR) communication systems.Zero-IF architecture reduce the image reject filter and IF filter,so it is excellent in low cost,compact volume,and low power dissipation.The receiver employs three digital attenuator and a high gain,high linearity low noise amplifier to achieve wide dynamic range of 70 dB and high receiving sensitivity of-81 dBm.A fully balanced I/Q demodulator and a differential Local Oscillator(LO) chips are used to minimize the negative effects caused by second-order distortion and LO leakage.In order to select an 8 MHz-channel from 14 continuous ones located in UHF band(694-806 MHz) accurately,approach of channel selectivity circuits is proposed.The RF receiver has been designed,fabricated,and test.The measured result shows that the noise figure is 3.4 dB,and the error vector magnitude is 7.5% when the input power is-81 dBm.展开更多
The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) de...The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.展开更多
The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band an...The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band and the channel bandwidth is up to 100 MHz. It operates in the time division duplex （TDD） mode and supports the multiple-input multipleoutput （MIMO） technique for the international mobile telecommunications （IMT）-advanced systems. The classical superheterodyne scheme is employed to achieve optimal performance. Design issues of the essential components such as low noise amplifier, power amplifier and local oscillators are described in detail. Measurement results show that the maximum linear output power of the RF transceiver is above 23 dBm, and the gain and noise figure of the low noise amplifier is around 24 dB and below 1 dB, respectively. Furthermore, the error vector magnitude （EVM） measurement shows that the performance of the developed RF transceiver is well beyond the requirements of the long term evolution （LTE）-advanced system. With up to 8 x 8 MIMO configuration, the RF transceiver supports more than a 1 Gbit/s data rate in field tests.展开更多
A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact ...A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.展开更多
在分析服装企业原材料仓库管理业务过程的基础上,指出仓库管理存在盘点工作量巨大、库存数量不准确等问题,结合RFID(radio frequency identification)技术的高速移动物体识别、多目标和非接触识别、环境适应性好等特点,提出在服装企业...在分析服装企业原材料仓库管理业务过程的基础上,指出仓库管理存在盘点工作量巨大、库存数量不准确等问题,结合RFID(radio frequency identification)技术的高速移动物体识别、多目标和非接触识别、环境适应性好等特点,提出在服装企业原材料仓库实施RFID的应用方案。该应用方案由3个部分组成,描述应用系统信息需求的信息方案,说明如何使用标签的方法与过程的标签方案和结合具体业务过程的应用方案。该方案可以给服装企业构建RFID应用系统提供较高的参考价值。展开更多
基金Supported by the National High-Tech Project (No. 2009AA011801)National Natural Science Foundation of China (No. 60621002)
文摘This paper presents an RF receiver of zero-Intermediate Frequency(IF) architecture for Cognitive Radio(CR) communication systems.Zero-IF architecture reduce the image reject filter and IF filter,so it is excellent in low cost,compact volume,and low power dissipation.The receiver employs three digital attenuator and a high gain,high linearity low noise amplifier to achieve wide dynamic range of 70 dB and high receiving sensitivity of-81 dBm.A fully balanced I/Q demodulator and a differential Local Oscillator(LO) chips are used to minimize the negative effects caused by second-order distortion and LO leakage.In order to select an 8 MHz-channel from 14 continuous ones located in UHF band(694-806 MHz) accurately,approach of channel selectivity circuits is proposed.The RF receiver has been designed,fabricated,and test.The measured result shows that the noise figure is 3.4 dB,and the error vector magnitude is 7.5% when the input power is-81 dBm.
文摘The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.
基金The National Natural Science Foundation of China (No.60702027,60921063)the National Basic Research Program of China(973 Program)(No.2010CB327400)the National Science and Technology Major Project of Ministry of Science and Technology of China(No.2010ZX03007-001-01,2011ZX03004-001)
文摘The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band and the channel bandwidth is up to 100 MHz. It operates in the time division duplex （TDD） mode and supports the multiple-input multipleoutput （MIMO） technique for the international mobile telecommunications （IMT）-advanced systems. The classical superheterodyne scheme is employed to achieve optimal performance. Design issues of the essential components such as low noise amplifier, power amplifier and local oscillators are described in detail. Measurement results show that the maximum linear output power of the RF transceiver is above 23 dBm, and the gain and noise figure of the low noise amplifier is around 24 dB and below 1 dB, respectively. Furthermore, the error vector magnitude （EVM） measurement shows that the performance of the developed RF transceiver is well beyond the requirements of the long term evolution （LTE）-advanced system. With up to 8 x 8 MIMO configuration, the RF transceiver supports more than a 1 Gbit/s data rate in field tests.
文摘A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.
文摘在分析服装企业原材料仓库管理业务过程的基础上,指出仓库管理存在盘点工作量巨大、库存数量不准确等问题,结合RFID(radio frequency identification)技术的高速移动物体识别、多目标和非接触识别、环境适应性好等特点,提出在服装企业原材料仓库实施RFID的应用方案。该应用方案由3个部分组成,描述应用系统信息需求的信息方案,说明如何使用标签的方法与过程的标签方案和结合具体业务过程的应用方案。该方案可以给服装企业构建RFID应用系统提供较高的参考价值。
