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PROBABILITY OF RANDOM EVENTS OF INSPECTION AND REPAIR AND MAINTAINING RELIABILITY OF STRUCTURES
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作者 郭书祥 吕震宙 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI 2000年第3期311-320,共10页
Reliability analysis of the inspected and repaired structure requires dealing with a large number of complex random events. Considering many kinds of random factors, a probability of these random events existing possi... Reliability analysis of the inspected and repaired structure requires dealing with a large number of complex random events. Considering many kinds of random factors, a probability of these random events existing possibly in the inspection and repair process and reliability analysis methodologies are proposed. A systematic dynamic reliability model is given for structures in service under the scheduled inspection and repair. 展开更多
关键词 fatigue crack growth random events of inspection and repair maintaining RELIABILITY
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Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
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作者 魏佳男 郭红霞 +5 位作者 张凤祁 罗尹虹 丁李利 潘霄宇 张阳 刘玉辉 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期329-334,共6页
The impact of ionizing radiation effect on single event upset(SEU) sensitivity of ferroelectric random access memory(FRAM) is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and the... The impact of ionizing radiation effect on single event upset(SEU) sensitivity of ferroelectric random access memory(FRAM) is studied in this work. The test specimens were firstly subjected to ^60Co γ-ray and then the SEU evaluation was conducted using ^209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement. 展开更多
关键词 ferroelectric random access memory ionizing radiation effect single event upset
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Coverage Control for Underwater Sensor Networks Based on Residual Energy Probability
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作者 Jinglin Liang Qian Sun +6 位作者 Xiaoyi Wang Jiping Xu Huiyan Zhang Li Wang Jiabin Yu Jing Li Ruichao Wang 《Computers, Materials & Continua》 SCIE EI 2022年第12期5459-5471,共13页
Underwater sensor networks have important application value in the fields of water environment data collection,marine environment monitoring and so on.It has some characteristics such as low available bandwidth,large ... Underwater sensor networks have important application value in the fields of water environment data collection,marine environment monitoring and so on.It has some characteristics such as low available bandwidth,large propagation delays and limited energy,which bring new challenges to the current researches.The research on coverage control of underwater sensor networks is the basis of other related researches.A good sensor node coverage control method can effectively improve the quality of water environment monitoring.Aiming at the problem of high dynamics and uncertainty of monitoring targets,the random events level are divided into serious events and general events.The sensors are set to sense different levels of events and make different responses.Then,an event-driven optimization algorithm for determining sensor target location based on self-organization map is proposed.Aiming at the problem of limited energy of underwater sensor nodes,considering the moving distance,coverage redundancy and residual energy of sensor nodes,an underwater sensor movement control algorithm based on residual energy probability is proposed.The simulation results show that compared with the simple movement algorithm,the proposed algorithm can effectively improve the coverage and life cycle of the sensor networks,and realize real-time monitoring of the water environment. 展开更多
关键词 random event self-organizingmap algorithm REDUNDANCY energy consumption COVERAGE
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Pattern dependence in synergistic effects of total dose on single-event upset hardness 被引量:1
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作者 郭红霞 丁李利 +4 位作者 肖尧 张凤祁 罗尹虹 赵雯 王园明 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期463-467,共5页
The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured re... The pattern dependence in synergistic effects was studied in a 0.18 μm static random access memory(SRAM) circuit.Experiments were performed under two SEU test environments:3 Me V protons and heavy ions.Measured results show different trends.In heavy ion SEU test,the degradation in the peripheral circuitry also existed because the measured SEU cross section decreased regardless of the patterns written to the SRAM array.TCAD simulation was performed.TIDinduced degradation in n MOSFETs mainly induced the imprint effect in the SRAM cell,which is consistent with the measured results under the proton environment,but cannot explain the phenomena observed under heavy ion environment.A possible explanation could be the contribution from the radiation-induced GIDL in pMOSFETs. 展开更多
关键词 pattern dependence total dose single event upset(SEU) static random access memory(SRAM)
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