OFDMA-Based Unsourced Random Access in LEO Satellite Internet of Things

This paper investigates the low earth orbit(LEO)satellite-enabled coded compressed sensing(CCS)unsourced random access(URA)in orthogonal frequency division multiple access(OFDMA)framework,where a massive uniform planar array(UPA)is equipped on the satellite.In LEO satellite communications,unavoidable timing and frequency offsets cause phase shifts in the transmitted signals,substantially diminishing the decoding performance of current terrestrial CCS URA receiver.To cope with this issue,we expand the inner codebook with predefined timing and frequency offsets and formulate the inner decoding as a tractable compressed sensing(CS)problem.Additionally,we leverage the inherent sparsity of the UPA-equipped LEO satellite angular domain channels,thereby enabling the outer decoder to support more active devices.Furthermore,the outputs of the outer decoder are used to reduce the search space of the inner decoder,which cuts down the computational complexity and accelerates the convergence of the inner decoding.Simulation results verify the effectiveness of the proposed scheme.

The study of lithographic variation in resistive random access memory

Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.

Advances of embedded resistive random access memory in industrial manufacturing and its potential applications

Embedded memory,which heavily relies on the manufacturing process,has been widely adopted in various industrial applications.As the field of embedded memory continues to evolve,innovative strategies are emerging to enhance performance.Among them,resistive random access memory(RRAM)has gained significant attention due to its numerousadvantages over traditional memory devices,including high speed(<1 ns),high density(4 F^(2)·n^(-1)),high scalability(~nm),and low power consumption(~pJ).This review focuses on the recent progress of embedded RRAM in industrial manufacturing and its potentialapplications.It provides a brief introduction to the concepts and advantages of RRAM,discusses the key factors that impact its industrial manufacturing,and presents the commercial progress driven by cutting-edge nanotechnology,which has been pursued by manysemiconductor giants.Additionally,it highlights the adoption of embedded RRAM in emerging applications within the realm of the Internet of Things and future intelligent computing,with a particular emphasis on its role in neuromorphic computing.Finally,the review discusses thecurrent challenges and provides insights into the prospects of embedded RRAM in the era of big data and artificial intelligence.

Power-Domain Collision-Tolerant Random Access Method with Auxiliary Beam for Satellite Internet of Things:A New Solution

There are numerous terminals in the satellite Internet of Things(IoT).To save cost and reduce power consumption,the system needs terminals to catch the characteristics of low power consumption and light control.The regular random access(RA)protocols may generate large amounts of collisions,which degrade the system throughout severally.The near-far effect and power control technologies are not applicable in capture effect to obtain power difference,resulting in the collisions that cannot be separated.In fact,the optimal design at the receiving end can also realize the condition of packet power domain separation,but there are few relevant researches.In this paper,an auxiliary beamforming scheme is proposed for power domain signal separation.It adds an auxiliary reception beam based on the conventional beam,utilizing the correlation of packets in time-frequency domain between the main and auxiliary beam to complete signal separation.The roll-off belt of auxiliary beam is used to create the carrier-to-noise ratio(CNR)difference.This paper uses the genetic algorithm to optimize the auxiliary beam direction.Simulation results show that the proposed scheme outperforms slotted ALOHA(SA)in terms of system throughput per-formance and without bringing terminals additional control burden.

Recovery of single event upset in advanced complementary metal-oxide semiconductor static random access memory cells

Using computer-aided design three-dimensional （3D） simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer （LET） threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.

Pilot Domain NOMA for Grant-Free Massive Random Access in Massive MIMO Marine Communication System

We propose a pilot domain non-orthogonal multiple access(NOMA)for uplink massive devices grant-free random access scenarios in massive multiple-input multiple-output(MIMO)maritime communication systems.These scenarios are characterized by numerous devices with sporadic access behavior,and therefore only a subset of them are active.Due to massive potential devices in the network,it is infeasible to assign a unique orthogonal pilot to each device in advance.In such scenarios,pilot decontamination is a crucial problem.In this paper,the devices are randomly assigned non-orthogonal pilots which are constructed by a linear combination of some orthogonal pilots.We show that a bipartite graph can conveniently describe the interference cancellation(IC)processes of pilot decontamination.High spectrum efficiency(SE)and low outage probability can be obtained by selecting the numbers of orthogonal pilots according to the given probability distribution.Numerical evaluatioDs show that the proposed pilot domain NOMA decreases the outage probability from 20%to 2 e-12 at the SE of 4 bits/s/Hz for a single device,compared to the conventional method of slotted ALOHA with 1024 antennas at the BS,or increases the spectrum efficiency from 1.2 bits/s/Hz to 4 bit/s/Hz at the outage probability of2 e-12 in contrast with the Welch bound equality(WBE)non-orthogonal pilots.

Design, analysis and optimization of random access inter-satellite ranging system

In this paper, a random access inter-satellite ranging(RAISR) system is designed. The ranging accuracy is optimized by an algorithm to greatly improve the ranging accuracy. This paper verifies the feasibility of the RAISR system through a series of theoretical analysis, numerical simulation, hardware system design and testing. The research work brings the solution to the design and accuracy optimization problem of the RAISR system,which eliminates the main error caused by the satellite dynamic characteristics and frequency source drift of the RAISR system.The accuracy of the measurement system has been significantly improved.

Random Access and Resource Allocation for the Coexistence of NOMA-Based and OMA-Based M2M Communications

In the future fifth generation(5G) systems,non-orthogonal multiple access(NOMA) is a promising technology that can greatly enhance the network capacity compared to orthogonal multiple access(OMA) .In this paper,we propose a novel random access(RA) and resource allocation scheme for the coexistence of NOMA-based and OMAbased machine-to-machine(M2M) communications,which aims at improving the number of successful data packet transmissions and guaranteeing the quality of service(Qo S) (e.g.,the minimum data rate requirement) for M2 M communications.The algorithm of joint user equipment(UE) paring and power allocation is proposed for the coexisting RA(i.e.,the coexistence of NOMA-based RA and OMA-based RA) .The resource allocation for the coexisting RA is investigated,thus improving the number of successful data packet transmissions by more efficiently using the radio resources.Simulation results demonstrate that the proposed RA and resource allocation scheme outperforms the conventional RA in terms of the number of successful data packet transmissions,thus is a promising technology in future M2 M communications.

An Improved Random Access Scheme for M2M Communications

In this study, an improved random access(RA) scheme for Machine-to-Machine(M2M) communications is proposed. The improved RA scheme is realized by two steps. First, the improved RA scheme achieves a reasonable resource tradeoff between physical random access channel(PRACH) and physical uplink shared channel(PUSCH). To realize a low-complexity resource allocation between PRACH and PUSCH, a boundary of traffic load is derived to divide the number of active M2 M users(UEs) into multiple intervals. The corresponding resource allocation for these intervals is determined by e NB. Then the resource allocation for other number of UEs can be obtained from the allocation of these intervals with less computation. Second, the access barring on arrival rate of new UEs is introduced in the improved RA scheme to reduce the expected delay. Numerical results show that the proposed improved RA scheme can realize a low-complexity resource allocation between PRACH and PUSCH. Meanwhile, the expected delay can be effectively reduced by access barring on arriving rate of new M2 M UEs.

Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

An optimized device structure for reducing the RESET current of phase-change random access memory （PCRAM） with blade-type like （BTL） phase change layer is proposed. The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation. The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller, and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface. The results indicate that the BTL cell has the superiorities of increasing the heating efficiency, decreasing the power consumption and reducing the RESET current from 0.67mA to 0.32mA. Therefore, the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.

Universal memory based on phase-change materials:From phase-change random access memory to optoelectronic hybrid storage

The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods,which constitute an insurmountable challenge for existing data centers.At present,computing devices use the von Neumann architecture with separate computing and memory units,which exposes the shortcomings of“memory bottleneck”.Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck.Phase-change random access memory(PCRAM)is called one of the best solutions for next generation non-volatile memory.Due to its high speed,good data retention,high density,low power consumption,PCRAM has the broad commercial prospects in the in-memory computing application.In this review,the research progress of phase-change materials and device structures for PCRAM,as well as the most critical performances for a universal memory,such as speed,capacity,and power consumption,are reviewed.By comparing the advantages and disadvantages of phase-change optical disk and PCRAM,a new concept of optoelectronic hybrid storage based on phase-change material is proposed.Furthermore,its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

Catalyzing Random Access at Physical Layer for Internet of Things:An Intelligence Enabled User Signature Code Acquisition Approach

Exploiting random access for the underlying connectivity provisioning has great potential to incorporate massive machine-type communication(MTC)devices in an Internet of Things(Io T)network.However,massive access attempts from versatile MTC devices may bring congestion to the IIo T network,thereby hindering service increasing of IIo T applications.In this paper,an intelligence enabled physical(PHY-)layer user signature code acquisition(USCA)algorithm is proposed to overcome the random access congestion problem with reduced signaling and control overhead.In the proposed scheme,the detector aims at approximating the optimal observation on both active user detection and user data reception by iteratively learning and predicting the convergence of the user signature codes that are in active.The crossentropy based low-complexity iterative updating rule is present to guarantee that the proposed USCA algorithm is computational feasible.A closed-form bit error rate(BER)performance analysis is carried out to show the efficiency of the proposed intelligence USCA algorithm.Simulation results confirm that the proposed USCA algorithm provides an inherent tradeoff between performance and complexity and allows the detector achieves an approximate optimal performance with a reasonable computational complexity.

Delay-Optimal Random Access in Large-Scale Energy Harvesting IoT Networks Based on Mean Field Game

With energy harvesting capability, the Internet of things(IoT) devices transmit data depending on their available energy, which leads to a more complicated coupling and brings new technical challenges to delay optimization. In this paper,we study the delay-optimal random access(RA) in large-scale energy harvesting IoT networks. We model a two-dimensional Markov decision process(MDP)to address the coupling between the data and energy queues, and adopt the mean field game(MFG) theory to reveal the coupling among the devices by utilizing the large-scale property. Specifically, to obtain the optimal access strategy for each device, we derive the Hamilton-Jacobi-Bellman(HJB) equation which requires the statistical information of other devices.Moreover, to model the evolution of the states distribution in the system, we derive the Fokker-PlanckKolmogorov(FPK) equation based on the access strategy of devices. By solving the two coupled equations,we obtain the delay-optimal random access solution in an iterative manner with Lax-Friedrichs method. Finally, the simulation results show that the proposed scheme achieves significant performance gain compared with the conventional schemes.

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

In this letter,the Ta/HfO/BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each.The reset current is reduced for the HfO/BN bilayer device compared with that for the Ta/HfO/TiN structure.Furthermore,the reset current decreases with increasing BN thickness.The HfOlayer is a dominating switching layer,while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode.The current conduction mechanism of low resistance state in the HfO/BN bilayer device is space-chargelimited current(SCLC),while it is Ohmic conduction in the HfOdevice.

Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers

As an industry accepted storage scheme, hafnium oxide（HfO_x） based resistive random access memory（RRAM）should further improve its thermal stability and data retention for practical applications. We therefore fabricated RRAMs with HfO_x/ZnO double-layer as the storage medium to study their thermal stability as well as data retention. The HfO_x/ZnO double-layer is capable of reversible bipolar switching under ultralow switching current（〈 3 μA） with a Schottky emission dominant conduction for the high resistance state and a Poole–Frenkel emission governed conduction for the low resistance state. Compared with a drastically increased switching current at 120℃ for the single HfO_x layer RRAM, the HfO_x/ZnO double-layer exhibits excellent thermal stability and maintains neglectful fluctuations in switching current at high temperatures（up to 180℃）, which might be attributed to the increased Schottky barrier height to suppress current at high temperatures. Additionally, the HfO_x/ZnO double-layer exhibits 10-year data retention @85℃ that is helpful for the practical applications in RRAMs.

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Pattem imprinting in deep sub-micron static random access memories （SRAMs） during total dose irradiation is inves- tigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell＇s static noise margin （SNM） and the background data, and study the influence of irradiation on the probability density function of ASNM, which is the difference between two data sides＇ SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation （STI） oxide rather than from the gate oxide of the micron-device.

Improved Method of Contention-Based Random Access in LTE System

Random access is the necessary process to establish the wireless link between the user equipment （UE） and network. The performance of the random access directly affects the performance of the network. In this work, we propose a method on the basis of the existing alternatives. In this method, we estimate the system load in advance to adjust the number of terminals. An access threshold is set to control the number of terminals which want to access the base station at an acceptable level. At the same time, we havean improvement on the existing power climbing strategy. We suppose that the power ramping is not always necessary for the re-access. And the selection ofpower ramping steps is studied in this paper. Simulations based on MATLAB are employed to evaluate the effectiveness of the proposed solution and to make comparisons with existing alternatives.