Random telegraph noise on the threshold voltage of multi-level flash memory

We investigate the impact of random telegraph noise（RTN） on the threshold voltage of multi-level NOR flash memory.It is found that the threshold voltage variation（？Vth） and the distribution due to RTN increase with the programmed level（Vth） of flash cells. The gate voltage dependence of RTN amplitude and the variability of RTN time constants suggest that the large RTN amplitude and distribution at the high program level is attributed to the charge trapping in the tunneling oxide layer induced by the high programming voltages. A three-dimensional TCAD simulation based on a percolation path model further reveals the contribution of those trapped charges to the threshold voltage variation and distribution in flash memory.

Dynamics of entropic uncertainty for three types of three-level atomic systems under the random telegraph noise

We study the dynamics of the entropic uncertainty for three types of three-level atomic systems coupled to an environment modeled by random matrices. The results show that the entropic uncertainty in the Ξ-type atomic system is lower than that in the V-type atomic system which is exactly the same as that in the Λ-type atomic system. In addition, the effect of relative coupling strength on entropic uncertainty is opposite in Markov region and non-Markov region, and the influence of a common environment and independent environments in Markov region and non-Markov region is also opposite. One can reduce the entropic uncertainty by decreasing relative coupling strength or placing the system in two separate environments in the Markov case. In the non-Markov case, the entropic uncertainty can be reduced by increasing the relative coupling strength or by placing the system in a common environment.

Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.

Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode

The correlation model between dark current RTS noise and defects for A1GalnP multiple-quantum-well laser diode is derived. Experimental results show that dark current RTS noise caused carrier number fluctuations at the interface of the heterojunction in the active region. According to this correlation model, the defect types are determined, and the defects＇ energy levels are quantitatively determined. The comer frequency of RTS noise power spectral density is analyzed. The experimental results are in good agreement with the theoretical. This result provided an effective method for estimating the deep-level traps in the active region of A1GaInP multiple quantum well laser diode.