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i-PP/EPR REACTOR ALLOY PREPARED THROUGH ETHYLENE/PROPYLENE SLURRY COPOLYMERIZATION CATALYZED BY METALLOCENE SUPPORTED iPP PARTICLES 被引量:3
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作者 范宏 李伯耿 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2008年第5期597-604,共8页
i-PP/m-EPR reactor alloy were prepared through ethylene/propylene slurry copolymerization catalyzed by metallocene(rac-Et(Ind)_2ZrCl_2)supported on porous iPP particles.Polar monomer(dihydromyrcene alcohol)treated wit... i-PP/m-EPR reactor alloy were prepared through ethylene/propylene slurry copolymerization catalyzed by metallocene(rac-Et(Ind)_2ZrCl_2)supported on porous iPP particles.Polar monomer(dihydromyrcene alcohol)treated with triethyaluminum was added in the preparation of porous iPP particles to introduce hydroxyl groups and thus enhance the ability for chemically supporting the metallocene catalyst.The effects of MAO/Zr ratio and monomer composition in feed on the reaction activity and property of polymer were i... 展开更多
关键词 reactor alloy Ethylene/propylene copolymerization Metallocene.
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High Selective Etching of Aluminum Alloys In High Plasma Density Reactor
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作者 David Liu Ching-Hwa Chen 《真空科学与技术学报》 EI CAS CSCD 1992年第Z1期140-146,共7页
An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configur... An inductively coupled plasma (ICP) discharge and its etching behaviors for aluminum alloys were investigated in this report. A radio frequency power supply was used for plasma generation. The unique hardware configuration enabled one to control ion energy separately from plasma density. Plasma properties were measured with a Langmuir probe. Electron temperature, plasma potential and plasma density were found to be comparable with those reported from Electron Cyclotron Resonance (ECR) and other types of reactors[1].A mixture of HBr and chlorine gases were used for this aluminum etch study. Experimental matrices were designed with Response Surface Methodology (RSM) to analyze the process trends versus etch parameters, such as source power, bias power and gas composition. An etch rate of 8500A to 9000A per minute was obtained at 5 to 15 mTorr pressure ranges. Anisotropic profiles with high photoresist selectivity (5 to 1) and silicon dioxide selectivity greater than 10 were achieved with HBr addition into chlorine plasma.Bromine-containing chemistry for an aluminum etch in a low pressure ICP discharge showed great potential for use in ULSI fabrication. In addition, the hardware used was very simple and the chamber size was much smaller than other high density plasma sources. 展开更多
关键词 CCCC EE High Selective Etching of Aluminum alloys In High Plasma Density reactor DDD
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