The dislocation density tensor computed as the cud of plastic distortion is regarded as a new constitutive variable in crystal plasticity. The dependence of the free energy function on the dislocation density tensor i...The dislocation density tensor computed as the cud of plastic distortion is regarded as a new constitutive variable in crystal plasticity. The dependence of the free energy function on the dislocation density tensor is explored starting from a quadratic ansatz. Rank one and logarithmic dependencies are then envisaged based on considerations from the statistical theory of dislocations. The rele- vance of the presented free energy potentials is evaluated from the corresponding analytical solutions of the periodic two-phase laminate problem under shear where one layer is a single crystal material undergoing single slip and the second one remains purely elastic.展开更多
The transition among multiple charging states of a semiconductor's localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level (TGFEL) is proposed....The transition among multiple charging states of a semiconductor's localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level (TGFEL) is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.展开更多
基金Dr. F.Latourte (EDF Research and Development Division,Les Renardières,Moret-sur-Loing,France) and Dr. J.M.Proix (EDF Research and Development Division,Clamart,France),and the MAI-SN (EDF,Les Renardières,Moret-sur-Loing,France) for stimulating discussions and financial support for part of this study
文摘The dislocation density tensor computed as the cud of plastic distortion is regarded as a new constitutive variable in crystal plasticity. The dependence of the free energy function on the dislocation density tensor is explored starting from a quadratic ansatz. Rank one and logarithmic dependencies are then envisaged based on considerations from the statistical theory of dislocations. The rele- vance of the presented free energy potentials is evaluated from the corresponding analytical solutions of the periodic two-phase laminate problem under shear where one layer is a single crystal material undergoing single slip and the second one remains purely elastic.
基金support from CNBM (China National Building Materials) Group for its partial financial support of the work
文摘The transition among multiple charging states of a semiconductor's localized intrinsic/impurity defects is considered as phase transitions, and the concept of transition Gibbs free energy level (TGFEL) is proposed. Dependence of the cross section of TGFEL on its charge state is discussed. Introduction of TGFEL to replace acti- vation energy has fundamentally important consequences for semiconductor physics and devices. TGFEL involves entropy. What is to be included and not included in the entropy term consistently for all defect levels is an unre- solved open question, related to correct interpretation of various experimental data associated with various defect levels. This work is a first step towards resolving this question.