Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transi...Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.展开更多
We propose a new method for numerical solution of the third-order differential equations.The key idea is to use relaxation approximation to transform the nonlinear third-order differential equation to a semilinear sec...We propose a new method for numerical solution of the third-order differential equations.The key idea is to use relaxation approximation to transform the nonlinear third-order differential equation to a semilinear second-order differential system with a source term and a relaxation parameter.The relaxation system has linear characteristic variables and can be numerically solved without relying on Riemann problem solvers or linear iterations.A non-oscillatory finite volume method for the relaxation system is developed.The method is uniformly accurate for all relaxation rates.Numerical results are shown for some nonlinear problems such as the Korteweg-de Vires equation.Our method demonstrated the capability of accurately capturing soliton wave phenomena.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332)the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028)。
文摘Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.
文摘We propose a new method for numerical solution of the third-order differential equations.The key idea is to use relaxation approximation to transform the nonlinear third-order differential equation to a semilinear second-order differential system with a source term and a relaxation parameter.The relaxation system has linear characteristic variables and can be numerically solved without relying on Riemann problem solvers or linear iterations.A non-oscillatory finite volume method for the relaxation system is developed.The method is uniformly accurate for all relaxation rates.Numerical results are shown for some nonlinear problems such as the Korteweg-de Vires equation.Our method demonstrated the capability of accurately capturing soliton wave phenomena.
