Resistance characteristics of the ball packed-bed regenerator of the new-type swirl flow hot blast stove

A renovation project of miniaturization and high efficiency is provided for the hot blast stove .The experimental data tested feasibility of the new-type swirl flow hot blast stove. The normal and hot state experiments have been done through changing the angle of gas entering into the regenerator. Factors influencing pressure drop have been studied and analyzed. The experimental results can be formulated in the form of the Ergun equation. The regression equation is obtained. And two modified coefficients are offered to the regenerator pressure drop of the new-type swirl flow hot blast stove.

Percolation-induced resistivity drop in lutetium dihydride with controllable electrical conductivity over six orders of magnitude

The recent report of near-ambient superconductivity in the nitrogen-doped lutetium hydride has attracted considerable attention.Subsequent follow-up studies confirmed the pressure-induced color changes in both N-free and N-doped LuH_(2) but failed to reproduce superconductivity. It remains a puzzle why the samples in the original report exhibited pronounced resistance anomaly reminiscent of the superconducting transition. Here, we show that percolation of metallic grains with high conductivity through the insulating surfaces in cold-pressed LuH_(2) samples can occasionally produce sharp resistance drops, which even display magnetic field and/or current dependences but stay far from zero resistance. The insulating surface of LuH2grain should be attributed to the modification of hydrogen stoichiometry or the contamination by oxygen/nitrogen, resulting in an increase of resistance by over six orders of magnitude. Such an effect is more significant than that discovered recently in LaH_(3±x), which may indicate that LuH_(2) can be a potential superionic conductor. Our results call for caution in asserting the resistivity drops as superconductivity and invalidate the background subtraction in analyzing the corresponding resistance data.

Effect of Gum Arabic as Partial Replacement of Cement on the Durability Properties of Compressed Laterite Blocks

Compressed stabilized earth blocks are the innovation of building materials replacing the earth blocks commonly called adobe. Common stabilizers (cement and lime) have been found to be expensive and harmful to the environment. Finding a natural, available, environmentally friendly stabilizer is vital. The objective of this study was therefore to assess the effects of gum Arabic (GA) as binder on the durability properties of laterite blocks. Compressed laterite blocks were stabilized with 2% and 6% respectively as total percentage of binders in the blocks (cement and/or GA). The results showed that GA improved the abrasion and drop resistances of compressed blocks. It has been found that the abrasion resistance of compressed blocks increased with the increase of GA content and the decrease of cement content. For instance, the mass abraded away of blocks stabilized with cement only was reduced up to 95.18% when GA was used to partially replace cement. As for drop test, the higher the content of GA the higher the resistance of blocks to drop.

Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs

A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor（Si-DG TFET） is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed（as in the case of the DG MOSFET）; instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential（e QFP）decreases as the channel potential starts to decrease, and there are hiphops in the channel e QFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I–V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models.