SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu...SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.展开更多
Ni（II） ions were removed from aqueous waste using micellar enhanced ultrafiltration （MEUF） with a mixture of surfactants. The surfactant mixture was the nonionic surfactant Tween 80 （TW80） mixed with the anionic...Ni（II） ions were removed from aqueous waste using micellar enhanced ultrafiltration （MEUF） with a mixture of surfactants. The surfactant mixture was the nonionic surfactant Tween 80 （TW80） mixed with the anionic surfactant sodium dodecyl sulfate （SDS） in different molar ratios ranging from 0.1-1.5. The opera- tional variables of the MEUF process such as pH, applied pressure, surfactant to metal ion ratio and nonionic to ionic surfactant molar ratio （α） were evaluated. Rejection of Ni and TW80 was 99% and 98% respectively whereas that for SDS was 65%. The flux and all resistances （fouling resistance, resistance due to concentration polarization） were measured and calculated for entire range of α respectively. A calculated flux was found to be declined with time, which was mainly attributed to concentration polarization rather than resistance from membrane fouling.展开更多
基金Project supported by the Natural Science Foundation of Zhejiang Province(No.LY17F040001)the Open Project Program of Surface Physics Laboratory(National Key Laboratory)of Fudan University(No.KF2015_02)+2 种基金the Open Project Program of National Laboratory for Infrared Physics,Chinese Academy of Sciences(No.M201503)the Zhejiang Provincial Science and Technology Key Innovation Team(No.2011R50012)the Zhejiang Provincial Key Laboratory(No.2013E10022)
文摘SiOxNy films with different oxygen concentrations were fabricated by reactive magnetron sputtering,and the resistive switching characteristics and conduction mechanism of Cu/SiOxNy/ITO devices were investigated.The Cu/SiOxNy/ITO device with SiOxNy deposited in 0.8-sccm O2 flow shows a reliable resistive switching behavior,including good endurance and retention properties.As the conductivity of SiOxNy increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism.The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament.
文摘Ni（II） ions were removed from aqueous waste using micellar enhanced ultrafiltration （MEUF） with a mixture of surfactants. The surfactant mixture was the nonionic surfactant Tween 80 （TW80） mixed with the anionic surfactant sodium dodecyl sulfate （SDS） in different molar ratios ranging from 0.1-1.5. The opera- tional variables of the MEUF process such as pH, applied pressure, surfactant to metal ion ratio and nonionic to ionic surfactant molar ratio （α） were evaluated. Rejection of Ni and TW80 was 99% and 98% respectively whereas that for SDS was 65%. The flux and all resistances （fouling resistance, resistance due to concentration polarization） were measured and calculated for entire range of α respectively. A calculated flux was found to be declined with time, which was mainly attributed to concentration polarization rather than resistance from membrane fouling.
