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Layer regrouping for water-flooded commingled reservoirs at a high water-cut stage 被引量:2
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作者 Chuan-Zhi Cui Jian-Peng Xu +3 位作者 Duan-Ping Wang Zhi-Hong Liu Ying-song Huang Zheng-Ling Geng 《Petroleum Science》 SCIE CAS CSCD 2016年第2期272-279,共8页
Layer regrouping is to divide all the layers into several sets of production series according to the physical properties and recovery percent of layers at high water-cut stage, which is an important technique to impro... Layer regrouping is to divide all the layers into several sets of production series according to the physical properties and recovery percent of layers at high water-cut stage, which is an important technique to improve oil recovery for high water-cut multilayered reservoirs. Dif- ferent regroup scenarios may lead to different production performances. Based on unstable oil-water flow theory, a multilayer commingled reservoir simulator is established by modifying the production split method. Taking into account the differences of layer properties, including per- meability, oil viscosity, and remaining oil saturation, the pseudo flow resistance contrast is proposed to serve as a characteristic index of layer regrouping for high water-cut multilayered reservoirs. The production indices of multi- layered reservoirs with different pseudo flow resistances are predicted with the established model in which the data are taken from the Shengtuo Oilfield. Simulation results show that the pseudo flow resistance contrast should be less than 4 when the layer regrouping is implemented. The K-means clustering method, which is based on the objec- tive function, is used to automatically carry out the layer regrouping process according to pseudo flow resistances. The research result is applied to the IV-VI sand groups of the second member of the Shahejie Formation in the Shengtuo Oilfield, a favorable development performance is obtained, and the oil recovery is enhanced by 6.08 %. 展开更多
关键词 Water-flooded reservoirs layer regrouping.Flow resistance - High water cut Reservoir simulation
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Enhancement of Active Anticorrosion via Ce-doped Zn-Al Layered Double Hydroxides Embedded in Sol-Gel Coatings on Aluminum Alloy 被引量:3
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作者 张优 刘建华 +3 位作者 LI Yingdong YU Mei YIN Xiaolin LI Songmei 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2017年第5期1199-1204,共6页
Ce-doped Zn-Al layered double hydroxide(LDH) nanocontainer was synthesized by a co-precipitation method. X-ray diffraction(XRD), Fourier transform infrared spectroscopy(FT-IR), scanning electron microscopy(SEM... Ce-doped Zn-Al layered double hydroxide(LDH) nanocontainer was synthesized by a co-precipitation method. X-ray diffraction(XRD), Fourier transform infrared spectroscopy(FT-IR), scanning electron microscopy(SEM) and transmission electron microscopy(TEM) methods were used for the characterization of the LDH nanocontainer. The anticorrosion activity of the LDH powders embedded in a hybrid sol-gel coating on aluminum alloy 2024 was investigated by electrochemical impendence spectroscopy(EIS). The results showed that Ce(III) ions were successfully incorporated into LDHs layers. The sol-gel coating modified with Ce-doped Zn-Al LDHs exhibited higher anticorrosion behavior compared with both unmodified and Ce-undoped LDHs containing coatings, which proved the applicability of Ce-doped LDHs in delaying coating degradation and their potential application as nanocontainers of corrosion inhibitors in self-healing coatings. 展开更多
关键词 layered double hydroxides cerium sol-gel coatings corrosion resistance AA2024
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Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification Layer
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作者 焦博 姚丽娟 +3 位作者 吴春芳 董化 侯洵 吴朝新 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期122-126,共5页
Room-temperature negative differential resistance (NDR) has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce.... Room-temperature negative differential resistance (NDR) has been observed in different types of organic materials. However, detailed study on the influence of the organic material on NDR performance is still scarce. In this work, room-temperature NDR & observed when CdSe quantum dot (QD) modified ITO is used as the electrode. Furthermore, material dependence of the NDR performance is observed by selecting materials with different charge transporting properties as the active layer, respectively. A peak-to-valley current ratio up to 9 is observed. It is demonstrated that the injection barrier between ITO and the organic active layer plays a decisive role for the device NDR performance. The influence of the aggregation state of CdSe QDs on the NDR performance is also studied, which indicates that the NDR is caused by the resonant tunneling process in the ITO/CdSe QD/organic active layer structure. 展开更多
关键词 Room-Temperature Organic Negative Differential Resistance Device Using CdSe Quantum Dots as the ITO Modification layer QDs NDR ITO
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Comparison of membrane fouling during short-term filtration of aerobic granular sludge and activated sludge 被引量:18
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作者 ZHOU Jun YANG Feng-lin MENG Fan-gang AN Peng WANG Di 《Journal of Environmental Sciences》 SCIE EI CAS CSCD 2007年第11期1281-1286,共6页
Aerobic granular sludge was cultivated adopting internal-circulate sequencing batch airlift reactor. The contradistinctive experiment about short-term membrane fouling between aerobic granular sludge system and activa... Aerobic granular sludge was cultivated adopting internal-circulate sequencing batch airlift reactor. The contradistinctive experiment about short-term membrane fouling between aerobic granular sludge system and activated sludge system were investigated. The membrane foulants was also characterized by Fourier transform infrared (FTIR) spectroscopy technique. The results showed that the aerobic granular sludge had excellent denitrification ability; the removal efficiency of TN could reach 90%. The aerobic granular sludge could alleviate membrane fouling effectively. The steady membrane flux of aerobic granular sludge was twice as much as that of activated sludge system. In addition, it was found that the aerobic granular sludge could result in severe membrane pore-blocking, however, the activated sludge could cause severe cake fouling. The major components of the foulants were identified as comprising of proteins and polysaccharide materials. 展开更多
关键词 membrane bioreactor membrane fouling pore-blocking cake layer resistance aerobic granular sludge
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Application of a wedge strip anode in micro-pattern gaseous detectors
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作者 田阳 杨祎罡 +1 位作者 李玉兰 李元景 《Chinese Physics C》 SCIE CAS CSCD 2013年第5期41-44,共4页
The wedge strip anode (WSA) has been widely used in 2-D positiomsensitive detectors. A circular WSA with an effective diameter of 52 mm is successfully coupled to a tripe gas electron multiplier (GEM) detector thr... The wedge strip anode (WSA) has been widely used in 2-D positiomsensitive detectors. A circular WSA with an effective diameter of 52 mm is successfully coupled to a tripe gas electron multiplier (GEM) detector through a simple resistive layer. A spatial resolution of 440 μm (FWHM) is achieved for a 10 kVp X-ray using 1 atm Ar:CO2=70:30 gas. The simple electronics of only three channels makes it very useful in applications strongly requiring simple interface design, e.g. sealed tubes and high pressure detectors. 展开更多
关键词 wedge strip anode micro pattern gaseous detector resistive layer
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A novel structure in reducing the on-resistance of a VDMOS 被引量:1
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作者 杨永晖 唐昭焕 +4 位作者 张正元 刘勇 王志宽 谭开洲 冯志成 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期44-47,共4页
A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown volt... A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing the new structure VDMOS, which is easily fabricated. With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23%, and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area. 展开更多
关键词 VDMOS on-resistance specific on-resistance breakdown voltage epitaxial layer resistance
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