Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

Preparation and Properties of Cu-Containing High-entropy Alloy Nitride Films by Magnetron Sputtering on Titanium Alloy

Magnetron sputtering deposition with regulated Cu target power was used for depositing Cu-containing high-entropy alloy nitride(Cu-(HEA)N)films on TC4 titanium alloy substrates.The microscopic morphologies,surface compositions,and thicknesses of the films were characterized using SEM+EDS;the anti-corrosion,wear resistance and antibacterial properties of the films in simulated seawater were investigated.The experimental results show that all four Cu-(HEA)N films are uniformly dense and contained nanoparticles.The film with Cu doping come into contact with oxygen in the air to form cuprous oxide.The corrosion resistance of the(HEA)N film without Cu doping on titanium alloy is better than the films with Cu doping.The Cu-(HEA)N film with Cu target power of 16 W shows the best wear resistance and antibacterial performance,which is attributed to the fact that Cu can reduce the coefficient of friction and exacerbate corrosion,and the formation of cuprous oxide has antibacterial properties.The findings of this study provide insights for engineering applications of TC4 in the marine field.

Exploring negative ion behaviors and their influence on properties of DC magnetron sputtered ITO films under varied power and pressure conditions

We deposited indium-tin-oxide(ITO)films on silicon and quartz substrates by magnetron sputtering technology in pure argon.Using electrostatic quadrupole plasma diagnostic technology,we investigate the effects of discharge power and discharge pressure on the ion flux and energy distribution function of incidence on the substrate surface,with special attention to the production of high-energy negative oxygen ions,and elucidate the mechanism behind its production.At the same time,the structure and properties of ITO films are systematically characterized to understand the potential effects of high energy oxygen ions on the growth of ITO films.Combining with the kinetic property analysis of sputtering damage mechanism of transparent conductive oxide(TCO)thin films,this study provides valuable physical understanding of optimization of TCO thin film deposition process.

Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)

This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.

Study of bias voltage effect on the performance of ta-C coating prepared by high power impulse magnetron sputtering

The mechanical and frictional properties of ta-C coatings deposited on the substrate surface affect applications in the field of cutting tools and wear-resistant components.In this paper,the effect of bias parameters on the performance of ta-C coatings was investigated based on high power impulse magnetron sputtering(HiPIMS)technology.The results show that bias voltage has a significant effect on the deposition rate,structure,and wear resistance of the coating.In the range of bias voltage−50 V to−200 V,the ta-C coating performance was the best under bias voltage−150 V.The thickness reached 530.4 nm,the hardness value reached 35.996 GPa,and the bonding force in-creased to 14.2 N.The maximum sp3 bond content was 59.53% at this condition.

Effect of substrate temperature and oxygen plasma treatment on the properties of magnetron-sputtered CdS for solar cell applications

Cadmium sulfide(CdS)is an n-type semiconductor with excellent electrical conductivity that is widely used as an electron transport material(ETM)in solar cells.At present,numerous methods for preparing CdS thin films have emerged,among which magnetron sputtering(MS)is one of the most commonly used vacuum techniques.For this type of technique,the substrate temperature is one of the key deposition parameters that affects the interfacial properties between the target film and substrate,determining the specific growth habits of the films.Herein,the effect of substrate temperature on the microstructure and electrical properties of magnetron-sputtered CdS(MS-CdS)films was studied and applied for the first time in hydrothermally deposited antimony selenosulfide(Sb_(2)(S,Se)_(3))solar cells.Adjusting the substrate temperature not only results in the design of the flat and dense film with enhanced crystallinity but also leads to the formation of an energy level arrangement with a Sb_(2)(S,Se)_(3)layer that is more favorable for electron transfer.In addition,we developed an oxygen plasma treatment for CdS,reducing the parasitic absorption of the device and resulting in an increase in the short-circuit current density of the solar cell.This study demonstrates the feasibility of MS-CdS in the fabrication of hydrothermal Sb_(2)(S,Se)_(3)solar cells and provides interface optimization strategies to improve device performance.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

深振荡磁控溅射放电等离子体脉冲特性

深振荡脉冲磁控溅射(deep oscillation magnetron sputtering,DOMS)以一系列微脉冲振荡波形的形式向靶提供能量,提供高密度等离子体的同时能够实现完全消除电弧放电和提高靶材原子离化率,实现高质量薄膜的沉积制备.针对DOMS微脉冲放电形式拓宽放电参数空间,提高工艺灵活性的特点,建立脉冲等离子体整体模型,测量充电电压DCint=300-380 V和微脉冲开启时间τon=2-6μs的Cr靶放电电压电流,将电压电流波形作为模型输入条件,获得DOMS放电等离子体参数随时间变化规律.充电电压300 V,等离子体峰值密度由τon=2μs的1.34×10^(18) m^(-3)增至τon=3μs的2.64×10^(18) m^(-3),τon由3μs增至6μs时,等离子体峰值密度基本不变.靶材离化率随τon变化趋呈现相近趋势,由τon=2μs的12%增至τon=3μs的20%,τon进一步增至6μs,离化率基本保持不变.固定τon=6μs,DCint由300 V升高至380 V,等离子体峰值密度由2.67×10^(18) m^(-3)增至3.90×10^(18) m^(-3),金属离化率由21%增至28%.DOMS放电具有高功率脉冲磁控溅射典型的金属自溅射现象,峰值自溅射参数Πpeak随功率密度线性增大,表明峰值功率密度是调控DOMS放电中金属自溅射的主要参数.Πpeak最高达到0.20,金属自溅射程度远高于常规脉冲直流磁控溅射,等离子体密度和沉积通量中金属离化率提高,原子沉积带来的阴影效应减轻,是DOMS沉积薄膜质量提高的原因.

基于共溅射ZnO/SnO_(2)异质结薄膜的气体传感器研究

采用射频磁控共溅射法在叉指电极上制备了ZnO/SnO_(2)n-n异质结复合薄膜,系统测试了其气敏特性,并分析了其气敏机理。结果表明,与ZnO薄膜和SnO_(2)薄膜气体传感器相比,ZnO/SnO_(2)异质结薄膜气体传感器具有更低的工作温度、更高的灵敏度以及更快的响应和恢复速度。ZnO/SnO_(2)异质结薄膜气体传感器对乙醇具有较好的选择性,最低检测体积分数为1×10^(-6),最佳工作温度为250℃;对1×10^(-4)乙醇气体的灵敏度可达18.4,响应时间和恢复时间分别为10 s和19 s。

磁控溅射玫瑰金靶材的刻蚀行为

[目的]磁控溅射玫瑰金膜层相比于电镀工艺具有突出的环保优势,但很少有关于磁控溅射靶材刻蚀行为的研究报道。[方法]以Au85玫瑰金制作平面溅射靶材,进行真空磁控溅射镀膜。研究了靶电流、功率密度、磁场布置等对靶材表面刻蚀行为的影响。[结果]靶电流和功率密度较低时辉光稳定,溅射过程平稳;靶材粒子会优先沿着某个晶面逐层溅射出来,形成阶梯状直线条纹;靶材表面形成V形刻蚀沟槽,刻蚀区斜坡与靶面法向夹角为75°~76°。随着靶电流和功率密度的增大,溅射过程偶有弧光放电现象发生,刻蚀区表面形成乳突状显微形貌;靶电流过高时,靶材在短时间内就会出现熔穿。靶座的磁场布置存在端部效应,使刻蚀槽的深度和宽度存在不均匀的现象。[结论]为提高贵金属平面靶的利用率,应改善磁场布置,并将功率密度控制在出现弧光放电的阈值内。

磁控溅射玫瑰金膜层的颜色及抗变色性能

[目的]玫瑰金因其优雅浪漫的颜色而被广泛用于装饰镀膜,但现有玫瑰金镀膜基本采用电镀工艺制备,存在严重的环境污染问题,需要寻求绿色环保的镀膜新工艺。[方法]采用磁控溅射镀膜工艺在316L不锈钢表面沉积Au85玫瑰金膜层。研究了溅射时间、靶电流和基体表面状态对膜层颜色的影响。检测了较佳工艺下所得膜层的抗变色性能。[结果]溅射时间在30 min以内变化时膜层颜色基本不受影响。靶电流从0.5 A增大至1.0 A时,膜层晶粒变粗,亮度下降,色度增大。基体表面状态会影响膜层颜色及不同方向的色差。在靶电流1.0 A下对镜面抛光的316L不锈钢磁控溅射15 min可获得较明亮的红色膜层,该膜层在模拟太阳光照射和人工模拟汗液浸泡试验中都表现出较好的抗变色性能。[结论]磁控溅射Au85玫瑰金镀膜工艺满足绿色环保和工艺饰品表面装饰要求,应用前景良好。

磁控溅射法制备掺镁氧化锌薄膜的微观结构及其物理性质

采用磁控溅射工艺制备了纯氧化锌(ZnO)和不同掺杂量的掺镁氧化锌(MgZnO)薄膜,研究了薄膜样品电学、光学、气敏性能和微观结构与掺杂量之间的依赖关系,以及温度和气体浓度对薄膜气敏性能的影响,并对掺杂量为10%(质量分数)的薄膜样品的室温气敏特性进行细致分析.结果显示:所有制备的薄膜样品均为c轴择优取向生长的六角纤锌矿晶体结构,掺杂量为10%的薄膜样品具有最好的晶体质量、微观结构、光学性能,气体响应性优于其他薄膜,对氨的响应性优于其他目标气体.在室温条件下,掺杂量为10%的薄膜样品对50cm^(3)·m^(-3)氨的响应为44.62%,180天后其响应仅轻微下降为42.02%.

C/Sn复合薄膜的磁控溅射制备及其作为锂离子电池负极材料的电化学性能

采用磁控溅射的方法在铜箔上制备了C/Sn复合薄膜并将其作为锂离子电池负极材料,研究了C/Sn复合薄膜中Sn质量分数对其电化学性能的影响。研究发现,随着复合薄膜中Sn质量分数的增加,其首圈放电比容量增加,在一定范围内增加Sn质量分数,首圈库仑效率增加,但当Sn质量分数过多时其库仑效率降低。Sn质量分数分别为89.20%、91.61%、93.85%、95.81%的四种复合薄膜,在电流密度为500 mA/g时的首圈放电比容量分别为1195.4、1372.97、1574.86、1642.30 mA·h/g,首圈库仑效率分别为86.84%、87.88%、94.06%、80.66%。循环200圈后,四种复合薄膜的比容量衰减率分别为0.70%、6.13%、11.32%、18.88%。研究结果表明,当复合薄膜中Sn质量分数为89.20%时,其具有最优的倍率性能和循环稳定性能,随着复合薄膜中Sn质量分数的增加,其倍率性能及循环稳定性变差。

Ku波段全腔提取相对论磁控管仿真设计

为了拓展相对论磁控管工作频段,设计了一个Ku波段高效率全腔提取相对论磁控管。该器件采用20腔阳极结构,冷腔模拟结果表明其π模工作频率约为13.5 GHz。结合全腔轴向提取技术,在电压150 kV、电流0.41 kA、工作磁场0.4 T的条件下,PIC仿真得到38 MW的仿真功率,工作频率13.47 GHz;仿真得到的功率转换效率约61.6%。仿真结果表明该器件转换效率高,结构紧凑,具有实现轻小型永磁包装的潜质。

玻璃表面化学蚀刻增强基板上类金刚石薄膜的结合力与透光率

本研究采用一种新方法来改善类金刚石(DLC)薄膜在玻璃表面结合力弱的问题。首先通过反胶束微乳液刻蚀法在玻璃表面蚀刻出致密连续的微米凹坑,然后采用磁控溅射依次镀制SiO_(2)、SiOC过渡膜及DLC膜。由于薄膜物质嵌在连续的微米凹坑里形成波浪状的3D膜层,不仅可将应用在膜上的作用力分解释放,而且也大大提高了玻璃表面与膜的接触面积,从而显著增强DLC薄膜在玻璃表面的结合。为了改善薄膜在可见光区的透光性能,镀膜前,在玻璃球形凹坑的玻璃表面进行二次化学蚀刻,在凹坑里生成纳米孔结构,减少反射,提高可见光透过率。本研究采用紫外-可见分光光度计、扫描电镜、拉曼光谱仪、纳米力学综合测试系统、显微硬度仪及铅笔硬度测试等手段对样品进行了性能表征。结果表明,SiO_(2)、SiOC过渡层可以使玻璃基板与DLC薄膜之间结合力,从(28.82±0.62)mN提高到(53.32±0.78)mN,提高近1倍。在相同的DLC膜镀制条件下,玻璃表面的微米凹坑可进一步使DLC的膜基结合力再提高1倍,从(53.32±0.78)mN提高到(106.32±0.82)mN。显微硬度从543.7 HV提高到735.5 HV,铅笔硬度从6 H提高到7 H。通过二次化学蚀刻产生的纳米孔可使镀膜玻璃的可见光平均透过率提高约4%。

ITO/AgNWs/ITO薄膜的制备及其性能研究

随着显示面板向超大尺寸、超高清、可触控的方向发展,单一的氧化铟锡(ITO)薄膜难以满足显示器件越来越高的光电性能要求,因此复合导电薄膜得以发展。本文制备了以二维银纳米线(AgNWs)导电网络嵌入ITO薄膜形成的ITO(222)/AgNWs/ITO(400)复合薄膜结构,系统研究了AgNWs添加量和上层ITO薄膜溅射温度对复合薄膜结构与光电性能的影响,AgNWs金属导电网络不仅提升了薄膜的电学性能,还保持了优良的光学性能。结果表明,在旋涂600μL的AgNWs分散液、上层ITO薄膜的溅射温度为175℃时,制备的复合ITO薄膜方阻为7.13Ω/□,在550 nm处透过率为91.52%,且品质因数为57.82×10^(-3)Ω^(-1),实现了超低电阻率和高可见光透过率复合ITO薄膜的制备。

溅射工艺时间对不同靶材溅射速率的影响

为了研究溅射工艺时间对不同靶材溅射速率的影响,以铜、铝、二氧化硅、氧化锌4种靶材为研究对象,获得不同溅射工艺时间下沉积薄膜厚度。根据靶材的导热情况和溅射时腔内的温度变化建立数学模型,采用Matlab软件模拟出靶材表面温度随溅射工艺时间的变化。结果表明,随着溅射工艺时间的延长,铜、铝等金属靶材的溅射速率几乎没有改变,而氧化锌和二氧化硅等靶材出现“溅射失重”现象,原因可能与靶材的导热性能和键能有关。

Ti掺杂类金刚石薄膜的制备及其高温摩擦学性能研究

为探究金属Ti掺杂DLC薄膜在高温环境下的摩擦磨损行为,通过射频磁控溅射和直流磁控溅射混合的沉积系统制备不同Ti含量的Ti-DLC薄膜,利用SEM、XRD、Raman、纳米压痕和摩擦试验机等分析Ti含量对Ti-DLC薄膜的微观结构、力学性能及不同温度下的摩擦学性能的影响。结果表明:Ti掺杂使得Ti-DLC薄膜中sp^(3)键的占比随着Ti含量的增加先升高后下降;Ti掺杂提高了Ti-DLC薄膜的硬度和弹性模量,并一定程度上提升了Ti-DLC薄膜的膜基结合力。摩擦测试表明:在常温下,Ti-DLC薄膜的摩擦因数和磨损率随Ti含量的增加而下降,但薄膜发生明显的磨粒磨损,且磨损率略高于DLC薄膜;Ti掺杂有效地提高了DLC薄膜的热稳定性和高温摩擦学性能,在300℃的高温下,掺杂薄膜仍维持较低的摩擦因数和磨损率。

氮含量对Ti-B-C-N薄膜微观结构和性能的影响

采用反应磁控溅射法在高速钢基体上制备氮原子分数分别为10.8%,15.6%,28.1%,36.4%的Ti-B-C-N薄膜,研究了氮含量对薄膜微观结构、硬度和摩擦磨损性能的影响。结果表明:Ti-B-C-N薄膜均由α-Fe和Ti(C,N)纳米晶组成,具有Ti(C,N)纳米晶镶嵌在非晶基体相中的纳米复合结构;随着氮含量增加,非晶相含量增加,Ti(C,N)纳米晶的含量和晶粒尺寸减小;随着氮含量增加,Ti-B-C-N薄膜的显微硬度增大,摩擦因数和磨损率均减小,表面磨痕变浅,磨损机制由剥落和微观犁削转变为微观抛光。