纳米TiO_(2)对NH_(3)-H_(2)O-LiBr工质降膜吸收性能的影响

为了探讨纳米TiO_(2)对三元NH_(3)-H_(2)O-LiBr工质降膜吸收的影响,本文利用数值分析建立了三元工作流体薄膜吸收的连续方程、能量方程和组分质量平衡方程,采用Matlab软件进行编程和计算纳米流体的降膜吸收性能,将其与实验数据进行对比验证,并进一步分析了纳米TiO_(2)质量分数、初始氨浓度、初始温度、冷却水进口温度、吸收压力和下降薄膜管长度对薄膜吸收性能的影响。研究表明:添加纳米TiO_(2)可以增强降膜吸收的传质速率,主要原因为液膜中氨的扩散系数增加。当纳米TiO_(2)质量分数从0%增加到0.1%、0.3%和0.5%时,扩散系数分别增加了3.44倍、6.42倍和11.76倍。此外,增加初始氨浓度、降低初始温度、提高冷却水进口温度或降低吸收压力都可以提高最终溶液的饱和度。

Investigation of Sprayed Lu2O3 Thin Films Using XPS

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

电化学沉积Cu_(2)O薄膜的制备及性能研究

利用电化学沉积法,以醋酸铜和醋酸钠为电解质溶液,在铟锡氧化物(ITO)导电玻璃表面制备了Cu_(2)O薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见分光光度计(UV-Vis)分别对Cu_(2)O薄膜的物相、微观形貌和光学性质进行了表征。并在光照的条件下,测试了Cu_(2)O的光电流谱,评价了Cu_(2)O薄膜的光电化学性能和光催化降解亚甲基蓝的活性。

退火温度对钽基RuO_2·nH_2O电沉积薄膜电容性能的影响

以RuCl3.xH2O的水溶液为电沉积溶液,通过恒流电沉积法在钽箔上电沉积一层RuO2.nH2O薄膜,研究退火温度对RuO2.nH2O薄膜的电容性能的影响;采用CHI660B电化学测试仪和循环伏安法对薄膜的电容性能进行测试;分别采用扫描电子显微电镜、能谱仪及X射线衍射仪对薄膜的形貌和微孔形态、薄膜元素及薄膜的物相进行分析。结果表明,未经退火处理的RuO2.nH2O薄膜的电容性能不稳定,在循环伏安法测试中电容量随循环次数的增加而降低;将RuO2.nH2O薄膜分别在不同温度(100,150,200,250和300℃)下进行的2 h的退火处理,经退火处理后的RuO2.nH2O薄膜的电容性能经过60次的循环后趋于稳定,其中,经过100℃退火处理的RuO2.nH2O薄膜的比电容最大,其比电容为0.083 8 F/cm2。

超级电容器高比容(RuO_2/SnO_2)·nH_2O复合薄膜电极的研究

采用电沉积工艺制备超级电容器用钽基(RuO2/SnO2).nH2O复合薄膜,研究了初始沉积液中Sn2+与Ru3+浓度比以及热处理对制备(RuO2/SnO2).nH2O复合薄膜性能的影响。借助扫描电镜、X射线衍射仪、红外光谱对薄膜的形貌和物相进行分析,用循环伏安法(CV)对该复合薄膜电容特性进行了测量。结果表明,以沉积液中Sn2+与Ru3+浓度比为2∶1时电沉积出的样品,在温度为300℃、热处理2.5h后所制备出的复合电极薄膜材料的比电容达到385F/g。

电流密度对电沉积制备钽基RuO_2·nH_2O薄膜形貌的影响

采用直流电沉积的方法研究了阴极电流密度的变化(1mA/cm2、3mA/cm2、5mA/cm2、10mA/cm2)对RuO2·nH2O薄膜附着力和形貌的影响,并探讨了RuO2·nH2O电沉积的机理。采用SEM、能谱仪、XRD对薄膜的形貌、元素、物相分别进行了分析,并用粒度分析仪(DELSA440SXAnalyzerControl)对电沉积液的Zeta电位进行了测试。通过实验可以得出:RuO2·nH2O薄膜厚度随着阴极电流密度的增加而增加,薄膜自然干燥失水后,开裂脱落的倾向随电流密度的增加而增大;当阴极电流密度达到10mA/cm2时,自然干燥后薄膜疏松,附着力差。

Enhancing superconductivity of ultrathin YBa2Cu3O7-δ films by capping non-superconducting oxides

In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.

Strongly enhanced flux pinning in the YBa_2Cu_3O_(7-X) films with the co-doping of Ba TiO_3 nanorod and Y_2O_3 nanoparticles at 65 K

YBa2Cu3O7-x（YBCO） films with co-doping BaTiO3（BTO） and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates（TFA-MOD）. The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction（XRD）, Raman spectra, and scanning electron microscope（SEM）. The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2（self-field, 65 K） by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density（JC） not only at the self-magnetic field, but also in the applied magnetic field.

灌溉和种植方式对双季稻田NH3挥发和N2O排放的影响

【目的】探究种植和灌溉方式对双季稻全生育期水分利用效率以及氮素气态损失的影响。【方法】以双季稻田为研究对象,在江西省灌溉试验中心站研究基地开展大田试验,设置手工栽插(HT)、机械插秧(MT)、抛秧(ST)、直播(DS)四种种植方式,淹水灌溉(FI)和间歇灌溉(II)两种灌溉方式,分析不同种植和灌溉方式对双季稻全生育期水分利用效率以及秧田期、本田期NH3挥发及N2O排放的影响,提出NH3挥发和N2O排放的主要时期。【结果】结果表明:(1)与传统淹水灌溉相比,间歇灌溉下水稻产量略有增加,不同种植方式间产量差异显著,HT最高,DS最低。(2)同一种植方式下,间歇灌溉下N2O排放量较淹水灌溉增加约7.9%~16.4%,同一灌溉方式下,早稻N2O损失量大小为DS>MT>HT>ST,晚稻为DS>HT>MT>ST,早、晚稻N2O排放主要发生在分蘖期、拔节孕穗期、成熟期,3个生育阶段N2O损失量占比超过70%,而育秧期MT、ST占比不到1.5%,HT为6.4%。(3)同一种植方式下,早、晚稻NH3挥发损失量淹水灌溉比间歇灌溉增加了3.0%~30.8%,同一灌溉方式下,DS相比移栽稻显著增加NH3挥发(P<0.05),HT、MT、ST之间无显著差异,NH3挥发峰值均在施肥后3 d内出现,且主要发生在苗期、分蘖期、拔节孕穗期3个时期,其NH3挥发损失量之和占整个生育期NH3挥发损失量80%以上,育秧期MT、ST占比不到2%,HT达4.2%。【结论】在不同种植方式下,间歇灌溉方式会提高双季稻产量和N2O排放,但会降低NH3挥发,从早、晚稻生育阶段来看,N2O损失主要发生在生育前期和后期,NH3挥发损失主要发生在生育前中期,且育秧期NH3挥发和N2O排放占比较低,DS在显著降低产量的同时带来了更高的N2O排放和NH3挥发。

RuO_2·nH_2O对质子交换膜燃料电池动态响应的影响

为了改善质子交换膜燃料电池在作为移动动力源时的动态响应,提出一种在质子交换膜燃料电池中引入RuO2·nH2O的方法,使质子交换膜燃料电池具备了超级电容器功能。首先以溶胶-凝胶法合成了RuO2·nH2O水溶胶,以提拉法将Nafion膜表面附上一层RuO2·nH2O;将此膜制成膜电极,通过对电极的循环伏安测试和对电池的稳态性能测试的结果证明了RuO2·nH2O的加入没有影响Pt的活性,对电池的稳态性能没有负面影响;通过对电极作多电位电势阶跃计时电流测试和脉冲电流下的电压响应测试,结果显示了RuO2·nH2O作为电容材料加入到质子交换膜燃料电池的膜电极中,在电池瞬间加载时可以缓冲电池电压大幅度衰减的现象,起到了改善电池动态响应的作用。

Upconversion properties of Y_2O_3:Er films prepared by sol-gel method

Y2O3：Er^3＋ films were prepared by a simple sol-gel process. The structural properties of Y2O3：Er^3＋ films were characterized with X-ray diffraction, Fourier transform infrared spectroscopy and field emission scanning electron microscopy. The results indicated that the Y2O3：Er^3＋ films might have high upconversion efficiency because of their low vibrational energy. Under 785 and 980 nm laser excitation, the samples showed green （^2H11/2→^4I15/2, ^4S3/2→^4I15/2） and red （^4F9/2→^4I15/2） upconversion emissions. The upconversion mechanisms were studied in detail through laser power dependence. Excited state absorption and energy transfer process were discussed as possible upconversion mechanisms. The cross relaxation process in Er^3＋ was also investigated.

Effects of dopant content on optical and electrical properties of In_2O_3: W transparent conductive films

The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.

Properties of oxide films grown on 25Cr20Ni alloy in air-H_2O and H_2-H_2O atmospheres

The oxidation kinetics,surface morphology and phase structure of oxide films grown on 25Cr20Ni alloy in air-H2O and H2-H2O atmospheres at 900 ℃ for 20 h were investigated.The anti-coking performance and resistance to carburization of the two oxide films were compared using 25Cr20Ni alloy tubes with an inner diameter of 10 mm and a length of 850 mm in a bench scale naphtha steam pyrolysis unit.The oxidation kinetics followed a parabolic law in an air-H2O atmosphere and a logarithm law in a H2-H2O atmosphere in the steady-state stage.The oxide film grown in the air-H2O atmosphere had cracks where the elements Fe and Ni were enriched and the un-cracked area was covered with octahedral-shaped MnCr2O4 spinels and Cr1.3Fe0.7O3 oxide clusters,while the oxide film grown in the H2-H2O atmosphere was intact and completely covered with dense standing blade MnCr2O4 spinels.In the pyrolysis tests,the anti-coking performance and resistance to carburization of the oxide film grown in the H2-H2O atmosphere were far better than that in the air-H2O atmosphere.The mass of coke formed in the oxide film grown in the H2-H2O atmosphere was less than 10％ of that in the air-H2O atmosphere.The Cr1.3Fe0.7O3 oxide clusters converted into Cr23C6 carbides and the cracks were filled with carbon in the oxide film grown in the air-H2O atmosphere after repeated coking and decoking tests,while the dense standing blade MnCr2O4 spinels remained unchanged in the oxide film grown in the H2-H2O atmosphere.The ethylene,propylene and butadiene yields in the pyrolysis tests were almost the same for the two oxide films.

Preparation and Characterization of Sol-Gel Derived Au Nanoparticle Dispersed Y_2O_3∶Eu Films

Gold nanoparticles dispersed Y2O3 films were prepared through a sol-gel method by using yttrium acetate and Au nanoparticles colloid as precursors. The films were characterized by X-ray diffraction （XRD）, transmission electron microscopy （TEM） and UV-VIS absorption spectra. XRD patterns and TEM images of Y2O3 ＋ Au films give the same resuits on structure and particle size as that of pure Y2O3 films. The surface plasma resonance （SPR） of Au nanoparticles in Y2O3 ＋ Au film was observed around 550 nm in the absorption spectrum and its position shifts to red with increasing annealing temperature is caused by the increase of dielectric constant of Y2O3 matrix and the size of Au nanoparticles. The second and third order nonlinear optical effects of Y2O3 ＋ Au films were also observed. The photoluminescent properties of Y2O3 ： Eu ＋ Au films were investigated and results indicate that there exist an energy transfer from Eu^3 ＋ to Au nanoparticles and this energy transfer decreases the emission of Eu^3 ＋ in Y2O3 ： Eu ＋ Au film.

Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy

Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.

LiMn_2O_4 thin films derived by rapid thermal annealing and their performance as cathode materials for Li ion battery

The LiMn2O4 thin film as a cathode material was prepared through solution deposition followed by rapid thermal annealing （RTA）. The phase identification and the study of surface morphology were carried out by X-my diffraction and scanning electron microscopy. Electrochemical properties were examined by cyclic voltammetry, galvanostatic charge-discharge experiments, and electrochemical impedance spectroscopy. The results show that the film prepared by this method is homogeneous, dense, and crack-free. The thin film has a capacity of 38 μtAh/（cm^2·μm） with the capacity loss of 0.037% per cycle after being cycled for 100 times. The average diffusion coefficient for lithium ions in the RTA-derived LiMn2O4 thin film is 1×10 ^-10 cm^2·s^-1.

Enhancing the thermal conductivity of polymer-assisted deposited Al_2O_3 film by nitrogen doping

Polymer-assisted deposition technique has been used to deposit Al2O3 and N-doped Al2O3 （AION） thin films on Si（100） substrates. The chemical compositions, crystallinity, and thermal conductivity of the as-grown films have been characterized by X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD）, and 3-omega method, respectively. Amorphous and polycrystalline Al2O3 and AlON thin films have been formed at 700 ℃ and 1000 ℃. The thermal conductivity results indicated that the effect of nitrogen doping on the thermal conductivity is determined by the competition of the increase of Al-N bonding and the suppression of crystallinity. A 67% enhancement in thermal conductivity has been achieved for the samples grown at 700 ℃, demonstrating that the nitrogen doping is an effective way to improve the thermal performance of polymer-assisted-deposited Al2O3 thin films at a relatively low growth temperature.

Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers

Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices.

Photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor nano thin films prepared by low damage magnetron sputtering method

We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.