TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under d...TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp^ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp^ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp^2C–C and sp^3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.展开更多
The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis ...The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.展开更多
Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High ...Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11375135 and 11275141)International Cooperation Program of the Ministry of Science and Technology of China(No.2015DFR00720)Fundamental Research Funds for the Central Universities
文摘TiBCN films were deposited on Si(100) and cemented carbide substrates by using multi-cathodic arc ion plating in C_2H_2 and N_2atmosp^here. Their structure and mechanical properties were studied systematically under different N_2 flow rates. The results showed that the Ti BCN films were adhered well to the substrates. Rutherford backscattering sp^ectroscopy was employed to determine the relative concentration of Ti, B, C and N in the films.The chemical bonding states of the films were explored by X-ray photoelectron sp^ectroscopy, revealing the presence of bonds of Ti N, Ti(C,N), BN, pure B, sp^2C–C and sp^3C–C, which changed with the N_2 flow rate. Ti BCN films contain nanocrystals of Ti N/Ti CN and Ti B_2/Ti(B,C)embedded in an amorphous matrix consisting of amorphous BN and carbon at N_2 flow rate of up to 250 sccm.
基金the Third World Academy of Science (TWAS, Grant #93-058 R6/PHYS/AF/AC)Obafemi Awolowo University(University Research Committee URC) for supporting this project
文摘The single solid source precursor, cobalt （Ⅱ） acetylacetonate was prepared and characterized by infrared spectroscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis （metal organic chemical vapour deposition （MOCVD）） of single solid source precursor, cobalt acetylacetonate, Co[C5H7O2]2 at a temperature of 420℃. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction （XRD）, showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2,15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron microscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than i micron for the deposited thin films of cobalt oxide.
基金the National High Technology and Research Development Program(863 Program)of China(No.2002AA321230)partially supported by the National Natural Sciences Foundation of China(No.10075072)
文摘Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.
