An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined b...An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.展开更多
A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering an...A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AIInGaN （χmin = 1.5%） with GaN buffer layer. The channeling angular scan around an off-normal {1213} axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AIInGaN. The resulting AlInGaN is subjected to an elastic strain at interracial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （^eT = 0）.展开更多
采用 MOCVD技术以 Al2 O3为衬底在 Ga N膜上生长了 In Ga N薄膜 .以卢瑟福背散射 /沟道 (RBS/Channeling)技术和光致发光 (PL )技术对 Inx Ga1 - x N / Ga N / Al2 O3样品进行了测试 ,获得了合金层的组分、厚度、元素随深度分布、结晶...采用 MOCVD技术以 Al2 O3为衬底在 Ga N膜上生长了 In Ga N薄膜 .以卢瑟福背散射 /沟道 (RBS/Channeling)技术和光致发光 (PL )技术对 Inx Ga1 - x N / Ga N / Al2 O3样品进行了测试 ,获得了合金层的组分、厚度、元素随深度分布、结晶品质及发光性能等信息 .研究表明生长温度和 TMIn/ TEGa比对 In Ga N薄膜的 In组分和生长速率影响很大 .在一定范围内 ,降低 TMIn/ TEGa比 ,In Ga N膜的生长速率增大 ,合金的 In组分反而提高 .降低生长温度 ,In Ga N膜的 In组分提高 ,但生长速率基本不变 . In Ga N薄膜的结晶品质随 In组分的增大而显著下降 ,In Ga N薄膜的 In组分由 0 .0 4增大到 0 .2 6 ,其最低沟道产额比由 4.1%增至 5 1.2 % . In Ga N薄膜中 In原子易处于替位位置 ,在所测试的 In组分范围 ,In原子的替位率均在 98%以上 .得到的质量良好的 In0 .0 4Ga0 .96 N薄膜的最低产额为 4.1% .研究结果还表明用 RBS技术和光致发光技术测定 In Ga N中 In组分的结果相差很大 ,In Ga N的PL谱要受较多因素影响 ,很难准确测定 In组分 ,而以 RBS技术得到的结果是可靠的 .展开更多
基金supported by the National Natural Science Foundation of China(Grant No.91226202)
文摘An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.
基金Project supported by the National Natural Science Foundation of China(Grant No.10875004)the National Basic Research Program of China(Grant No.2010CB832904)
文摘A 240-nm thick Al0.4In0.02Ga0.58N layer is grown by metal organic chemical vapour deposition, with an over 1-μm thick GaN layer used as a buffer layer on a substrate of sapphire （0001）. Rutherford backscattering and channeling are used to characterize the microstructure of AlInGaN. The results show a good crystalline quality of AIInGaN （χmin = 1.5%） with GaN buffer layer. The channeling angular scan around an off-normal {1213} axis in the {1010} plane of the AlInGaN layer is used to determine tetragonal distortion eT, which is caused by the elastic strain in the AIInGaN. The resulting AlInGaN is subjected to an elastic strain at interracial layer, and the strain decreases gradually towards the near-surface layer. It is expected that an epitaxial AlInGaN thin film with a thickness of 850 nm will be fully relaxed （^eT = 0）.
