Effects of Sb content on structure and laser reflection performance of ATO nanomaterials

Antimony tin oxide （ATO） nano-particles doped with different Sb contents were prepared by co-precipitation method, using SnCl4·5H2O and SbCl3 as main raw materials. Microstructure, morphology and reflectivity curves were characterized by XRD, FESEM, UV-visible spectroscopy and laser, and the effects of Sb content on crystalline microstructure, crystal size and reflectivity curves of the ATO nano-particles were investigated systematically. The results show that the ATO nano-particles prepared by co-precipitation method have tetragonal rutile structure, with particle size distribution range of several decade nanometer. With the increase of Sb content, the grain size of ATO decreases, and the unit cell volume increases. Compared with the SnO2 particles without Sb, the 1.06 μm laser reflection of ATO nano-particles doped with Sb is obviously lower. With the increase of Sb content, the reflection increases first, then decreases;when the Sb content is 20%, 1.06μm laser reflection of ATO nano-particles is below 0.02%, and the laser reflection performance is the best.

Comprehensive Optimization of Electrical and Optical Properties for ATO Films Prepared by Pulsed Laser Deposition

Antimony doped tin oxide（ATO） thin films have been prepared by pulsed laser deposition（PLD） method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb（3＋） and Sb（5＋） and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb（3＋） towards Sb（5＋）（Sb（5＋）/Sb（3＋） ratio） is determined by Sb content.When the Sb content is increased to 12 at%,the Sb（5＋）/Sb（3＋） ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10（-3） Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest ＂figure of merit＂ of 3.85×10（-3） Ω（-1）.Finally,an antimony selenide（Sb_2Se_3） heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.