Although metal oxide compounds are considered as desirable anode materials for potassium-ion batteries(PIBs)due to their high theoretical capacity,the large volume variation remains a key issue in realizing metal oxid...Although metal oxide compounds are considered as desirable anode materials for potassium-ion batteries(PIBs)due to their high theoretical capacity,the large volume variation remains a key issue in realizing metal oxide anodes with long cycle life and excellent rate property.In this study,polypyrroleencapsulated Sb_(2)WO_(6)(denoted Sb_(2)WO_(6)@PPy)microflowers are synthesized by a one-step hydrothermal method followed by in-situ polymerization and coating by pyrrole.Leveraging the nanosheet-stacked Sb_(2)WO_(6)microflower structure,the improved electronic conductivity,and the architectural protection offered by the PPy coating,Sb_(2)WO_(6)@PPy exhibits boosted potassium storage properties,thereby demonstrating an outstanding rate property of 110.3 m A h g^(-1)at 5 A g^(-1)and delivering a long-period cycling stability with a reversible capacity of 197.2 m A h g^(-1)after 500 cycles at 1 A g^(-1).In addition,the conversion and alloying processes of Sb_(2)WO_(6)@PPy in PIBs with the generation of intermediates,K_(2)WO_(4)and K_(3)Sb,is determined by X-ray photoelectron spectroscopy,transmission electron microscopy,and exsitu X-ray diffraction during potassiation/depotassiation.Density functional theory calculations demonstrate that the robust coupling between PPy and Sb_(2)WO_(6)endues it with a much stronger total density of states and a built-in electric field,thereby increasing the electronic conductivity,and thus effectively reduces the K^(+)diffusion barrier.展开更多
钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量...钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量高被认为是较好的钠离子电池负极材料。本文使用简单水热法将Sb_(2)S_(3)与石墨烯复合,制备Sb_(2)S_(3)/石墨烯复合材料(Sb_(2)S_(3)/Gr)。结果表明:Sb_(2)S_(3)/Gr作为钠离子电池负极时,不仅表现出良好的电导率(3.5×10~(-3)S/cm)和钠离子扩散速率(4.853×10~(-13)cm~2/s),而且在0.5 A/g的电流密度下,首圈库伦效率为76.27%,经150次循环后的比容量稳定在488 m A·h/g,表现出较高的比容量。Sb_(2)S_(3)/Gr复合材料表现出了极大的应用潜力,为高性能钠离子电池负极材料的研发提供了一定的参考价值。展开更多
To avoid the high purity reagents and high energy consumption involved in the manufacturing of lithium-ion battery anode materials,Sb_(2)S_(3) nanorods/porous-carbon anode was prepared by remodeling natural stibnite o...To avoid the high purity reagents and high energy consumption involved in the manufacturing of lithium-ion battery anode materials,Sb_(2)S_(3) nanorods/porous-carbon anode was prepared by remodeling natural stibnite ore with porous carbon matrix via a simple melting method.Due to the nanostructure of Sb_(2)S_(3) nanorods and synergistic effect of porous carbon,the Sb_(2)S_(3) nanorods/porous-carbon anode achieved high cyclic performance of 530.3 mA·h/g at a current density of 100 mA/g after 150 cycles,and exhibited a reversible capacity of 130.6 mA·h/g at a high current density of 5000 mA/g for 320 cycles.This shows a great possibility of utilizing Sb_(2)S_(3) ore as raw material to fabricate promising anodes for advanced lithium-ion batteries.展开更多
V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density...V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density wave.Except for the 2a_(0)×2a_(0)CDW(charge density wave with in-plane 2×2 superlattice modulation)in AV_(3)Sb_(5),an additional 1×4(4a_(0))unidirectional stripe order has been observed at the Sb surface of Rb V3 Sb5 and CsV_(3)Sb_(5).However,the stability and electronic nature of the 4a_(0) stripe order remain controversial and unclear.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we systematically study the 4a_(0) stripe order on the Sb-terminated surface of CsV_(3)Sb_(5).We find that the 4a_(0) stripe order is visible in a large energy range.The STM images with positive and negative bias show contrast inversion,which is the hallmark for the Peierls-type CDW.In addition,below the critical temperature about 60 K,the 4a_(0)stripe order keeps unaffected against the topmost Cs atoms,point defects,step edges and magnetic field up to 8 T.Our results provide experimental evidences on the existence of unidirectional CDW in CsV_(3)Sb_(5).展开更多
We present the superconducting(SC) property and high-robustness of structural stability of kagome CsV_3Sb_5 under in situ high pressures.For the initial SC-I phase,its T_c is quickly enhanced from 3.5 K to 7.6 K and t...We present the superconducting(SC) property and high-robustness of structural stability of kagome CsV_3Sb_5 under in situ high pressures.For the initial SC-I phase,its T_c is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P-10 GPa.With further increasing pressure,an SC-Ⅱ phase emerges at P-15 GPa and persists up to 100 GPa.The T_c rapidly increases to the maximal value of 5.2 K at P=53.6 GPa and slowly decreases to 4.7 K at P=100 GPa.A two-dome-like variation of T_c in CsV_3Sb_5 is concluded here.The Raman measurements demonstrate that weakening of E_(2g) mode and strengthening of E_(1g) mode occur without phase transition in the SC-II phase,which is supported by the results of phonon spectra calculations.Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near E_F,i.e.,disappearance of Z2 invariant.Meanwhile,the Fermi surface enlarges significantly,consistent with the increased carrier density.The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC.展开更多
Antimony sulfide(Sb_(2)S_(3))is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(~1.7 e V)and abundance of constituent elements.However,power con...Antimony sulfide(Sb_(2)S_(3))is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(~1.7 e V)and abundance of constituent elements.However,power conversion efficiency(PCE)of Sb_(2)S_(3)-based solar cells still lags much behind the theoretically predicted due to the imperfect energy level alignment at the charge transporting layer/Sb_(2)S_(3)interfaces and hence severe charge recombination.Herein,we insert a high-temperature sintered magnesium(Mg)-doped tin oxide(SnO_(2))layer between cadmium sulfide(Cd S)and fuorine doped tin oxide to form a cascaded energy level alignment and thus mitigate interfacial charge recombination.Simultaneously,the inserted Mg-doped Sn O_(2)buffer layer facilitates the growth of the neibouring Cd S film with orientation followed by Sb_(2)S_(3)film with larger grains and fewer pinholes.Consequently,the resultant Sb_(2)S_(3)solar cells with Mg-doped SnO_(2)deliver a champion PCE of 6.31%,22.8%higher than those without a buffer layer.Our work demonstrates that deliberate absorber growth as well as efficient hole blocking upon an appropriate buffer layer is viable in obtaining solution-processed Sb_(2)S_(3)solar cells with high performance.展开更多
Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode ...Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.展开更多
Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of f...Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.展开更多
Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources.A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantu...Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources.A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots.Here,we report the growth of embedded GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy.It is found that the size of the GaAs_(1−x)Sb_(x) quantum dot can be well-defined by the GaAs nanowire.Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature.All GaAs_(1−x)Sb_(x) quantum dots exhibit a pure zinc-blende phase.In addition,we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs_(1−x)Sb_(x) quantum dots.Different from the traditional growth process of the passivation layer,GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs_(1−x)Sb_(x) quantum dots.The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer.The successful fabrication of embedded high-quality GaAs_(1−x)Sb_(x) quantum dots lays the foundation for the realization of GaAs_(1−x)Sb_(x)-based single photon sources.展开更多
Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy togeth...Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.展开更多
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle...Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.展开更多
基金supported by the National Natural Science Foundation of China(22075147 and 22179063)。
文摘Although metal oxide compounds are considered as desirable anode materials for potassium-ion batteries(PIBs)due to their high theoretical capacity,the large volume variation remains a key issue in realizing metal oxide anodes with long cycle life and excellent rate property.In this study,polypyrroleencapsulated Sb_(2)WO_(6)(denoted Sb_(2)WO_(6)@PPy)microflowers are synthesized by a one-step hydrothermal method followed by in-situ polymerization and coating by pyrrole.Leveraging the nanosheet-stacked Sb_(2)WO_(6)microflower structure,the improved electronic conductivity,and the architectural protection offered by the PPy coating,Sb_(2)WO_(6)@PPy exhibits boosted potassium storage properties,thereby demonstrating an outstanding rate property of 110.3 m A h g^(-1)at 5 A g^(-1)and delivering a long-period cycling stability with a reversible capacity of 197.2 m A h g^(-1)after 500 cycles at 1 A g^(-1).In addition,the conversion and alloying processes of Sb_(2)WO_(6)@PPy in PIBs with the generation of intermediates,K_(2)WO_(4)and K_(3)Sb,is determined by X-ray photoelectron spectroscopy,transmission electron microscopy,and exsitu X-ray diffraction during potassiation/depotassiation.Density functional theory calculations demonstrate that the robust coupling between PPy and Sb_(2)WO_(6)endues it with a much stronger total density of states and a built-in electric field,thereby increasing the electronic conductivity,and thus effectively reduces the K^(+)diffusion barrier.
文摘钠离子电池(sodium-ion batteries,SIBs)具有成本低的潜在优势,有望成为替代锂离子电池(lithium ion batteries,LIBs)的储能设备。为提升钠离子电池的性能,开发出适应钠离子脱嵌的负极材料尤为重要。硫化锑(Sb_(2)S_(3))因其理论比容量高被认为是较好的钠离子电池负极材料。本文使用简单水热法将Sb_(2)S_(3)与石墨烯复合,制备Sb_(2)S_(3)/石墨烯复合材料(Sb_(2)S_(3)/Gr)。结果表明:Sb_(2)S_(3)/Gr作为钠离子电池负极时,不仅表现出良好的电导率(3.5×10~(-3)S/cm)和钠离子扩散速率(4.853×10~(-13)cm~2/s),而且在0.5 A/g的电流密度下,首圈库伦效率为76.27%,经150次循环后的比容量稳定在488 m A·h/g,表现出较高的比容量。Sb_(2)S_(3)/Gr复合材料表现出了极大的应用潜力,为高性能钠离子电池负极材料的研发提供了一定的参考价值。
基金the financial supports from the National Natural Science Foundation of China(No.51774343).
文摘To avoid the high purity reagents and high energy consumption involved in the manufacturing of lithium-ion battery anode materials,Sb_(2)S_(3) nanorods/porous-carbon anode was prepared by remodeling natural stibnite ore with porous carbon matrix via a simple melting method.Due to the nanostructure of Sb_(2)S_(3) nanorods and synergistic effect of porous carbon,the Sb_(2)S_(3) nanorods/porous-carbon anode achieved high cyclic performance of 530.3 mA·h/g at a current density of 100 mA/g after 150 cycles,and exhibited a reversible capacity of 130.6 mA·h/g at a high current density of 5000 mA/g for 320 cycles.This shows a great possibility of utilizing Sb_(2)S_(3) ore as raw material to fabricate promising anodes for advanced lithium-ion batteries.
基金financially supported by the National Key Research and Development Project of China(Grant Nos.2018YFA0305800 and 2019YFA0308500)the National Natural Science Foundation of China(Grant Nos.61888102and 52022105)+2 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the University of Chinese Academy of Sciences。
文摘V-based kagome materials AV_(3)Sb_(5)(A=K,Rb,Cs)have attracted much attention due to their novel properties such as unconventional superconductivity,giant anomalous Hall effect,charge density wave(CDW)and pair density wave.Except for the 2a_(0)×2a_(0)CDW(charge density wave with in-plane 2×2 superlattice modulation)in AV_(3)Sb_(5),an additional 1×4(4a_(0))unidirectional stripe order has been observed at the Sb surface of Rb V3 Sb5 and CsV_(3)Sb_(5).However,the stability and electronic nature of the 4a_(0) stripe order remain controversial and unclear.Here,by using low-temperature scanning tunneling microscopy/spectroscopy(STM/S),we systematically study the 4a_(0) stripe order on the Sb-terminated surface of CsV_(3)Sb_(5).We find that the 4a_(0) stripe order is visible in a large energy range.The STM images with positive and negative bias show contrast inversion,which is the hallmark for the Peierls-type CDW.In addition,below the critical temperature about 60 K,the 4a_(0)stripe order keeps unaffected against the topmost Cs atoms,point defects,step edges and magnetic field up to 8 T.Our results provide experimental evidences on the existence of unidirectional CDW in CsV_(3)Sb_(5).
基金Supported by the National Key Research and Development Program of China (Grant Nos.2017YFA0304700,2018YFE0202601,and2016YFA0300600)the National Natural Science Foundation of China (Grant Nos.51922105,11804184,11974208,and 51772322)+2 种基金the Chinese Academy of Sciences (Grant No.QYZDJ-SSW-SLH013)the Beijing Natural Science Foundation (Grant No.Z200005)the Shandong Provincial Natural Science Foundation (Grant Nos.ZR2020YQ05,ZR2019MA054,and 2019KJJ020)。
文摘We present the superconducting(SC) property and high-robustness of structural stability of kagome CsV_3Sb_5 under in situ high pressures.For the initial SC-I phase,its T_c is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P-10 GPa.With further increasing pressure,an SC-Ⅱ phase emerges at P-15 GPa and persists up to 100 GPa.The T_c rapidly increases to the maximal value of 5.2 K at P=53.6 GPa and slowly decreases to 4.7 K at P=100 GPa.A two-dome-like variation of T_c in CsV_3Sb_5 is concluded here.The Raman measurements demonstrate that weakening of E_(2g) mode and strengthening of E_(1g) mode occur without phase transition in the SC-II phase,which is supported by the results of phonon spectra calculations.Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near E_F,i.e.,disappearance of Z2 invariant.Meanwhile,the Fermi surface enlarges significantly,consistent with the increased carrier density.The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC.
基金supported by the National Natural Science Foundation of China(Grant Nos.62074117,61904126)the Natural Science Foundation of Hubei Province,China(Grant Nos.2019AAA020,2019CFB122)+2 种基金the Natural Science Foundation of Guangdong Province(2021A1515012594)Guangdong Province Office of Education(2020ZDZX2028)the Special Funds for the Development of Strategic Emerging Industries in Shenzhen(JCYJ20190808152609307)。
文摘Antimony sulfide(Sb_(2)S_(3))is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(~1.7 e V)and abundance of constituent elements.However,power conversion efficiency(PCE)of Sb_(2)S_(3)-based solar cells still lags much behind the theoretically predicted due to the imperfect energy level alignment at the charge transporting layer/Sb_(2)S_(3)interfaces and hence severe charge recombination.Herein,we insert a high-temperature sintered magnesium(Mg)-doped tin oxide(SnO_(2))layer between cadmium sulfide(Cd S)and fuorine doped tin oxide to form a cascaded energy level alignment and thus mitigate interfacial charge recombination.Simultaneously,the inserted Mg-doped Sn O_(2)buffer layer facilitates the growth of the neibouring Cd S film with orientation followed by Sb_(2)S_(3)film with larger grains and fewer pinholes.Consequently,the resultant Sb_(2)S_(3)solar cells with Mg-doped SnO_(2)deliver a champion PCE of 6.31%,22.8%higher than those without a buffer layer.Our work demonstrates that deliberate absorber growth as well as efficient hole blocking upon an appropriate buffer layer is viable in obtaining solution-processed Sb_(2)S_(3)solar cells with high performance.
基金This work was supported by the High Level Talents Project Fund of Hainan Basic and Applied Research Program(NATURAL SCIENCE)(Grant No.2019RC118).
文摘Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.
基金supported by the National Natural Science Foundation of China(Grant Nos.62104156,62074102)the Guangdong Basic and Applied Basic Research Foundation(Grant Nos.2023A1515011256,2022A1515010979)China+1 种基金Science and Technology plan project of Shenzhen(Grant Nos.20220808165025003,20200812000347001)Chinasupported by the open foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials,State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite Structures,Guangxi University(Grant No.2022GXYSOF13)。
文摘Sb_(2)Se_(3) with unique one-dimensional(1D) crystal structure exhibits exceptional deformation tolerance,demonstrating great application potential in flexible devices.However,the power conversion efficiency(PCE) of flexible Sb_(2)Se_(3) photovoltaic devices is temporarily limited by the complicated intrinsic defects and the undesirable contact interfaces.Herein,a high-quality Sb_(2)Se_(3) absorber layer with large crystal grains and benign [hkl] growth orientation can be first prepared on a Mo foil substrate.Then NaF intermediate layer is introduced between Mo and Sb_(2)Se_(3),which can further optimize the growth of Sb_(2)Se_(3)thin film.Moreover,positive Na ion diffusion enables it to dramatically lower barrier height at the back contact interface and passivate harmful defects at both bulk and heterojunction.As a result,the champion substrate structured Mo-foil/Mo/NaF/Sb_(2)Se_(3)/CdS/ITO/Ag flexible thin-film solar cell delivers an obviously higher efficiency of 8.03% and a record open-circuit voltage(V_(OC)) of 0.492 V.This flexible Sb_(2)Se_(3) device also exhibits excellent stability and flexibility to stand large bending radius and multiple bending times,as well as superior weak light photo-response with derived efficiency of 12.60%.This work presents an effective strategy to enhance the flexible Sb_(2)Se_(3) device performance and expand its potential photovoltaic applications.
基金supported by the National Natural Science Foundation of China(Grant No.12374459)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB0460000)support from Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant Nos.2017156 and Y2021043).
文摘Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources.A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots.Here,we report the growth of embedded GaAs_(1−x)Sb_(x) quantum dots in GaAs nanowires by molecular-beam epitaxy.It is found that the size of the GaAs_(1−x)Sb_(x) quantum dot can be well-defined by the GaAs nanowire.Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature.All GaAs_(1−x)Sb_(x) quantum dots exhibit a pure zinc-blende phase.In addition,we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs_(1−x)Sb_(x) quantum dots.Different from the traditional growth process of the passivation layer,GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs_(1−x)Sb_(x) quantum dots.The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer.The successful fabrication of embedded high-quality GaAs_(1−x)Sb_(x) quantum dots lays the foundation for the realization of GaAs_(1−x)Sb_(x)-based single photon sources.
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2023YFF0719200 and 2022YFA1404004)the National Natural Science Foundation of China(Grant Nos.62322115,61988102,61975110,62335012,and 12074248)+3 种基金111 Project(Grant No.D18014)the Key Project supported by Science and Technology Commission Shanghai Municipality(Grant No.YDZX20193100004960)Science and Technology Commission of Shanghai Municipality(Grant Nos.22JC1400200 and 21S31907400)General Administration of Customs People’s Republic of China(Grant No.2019HK006)。
文摘Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。
文摘Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.
