The effect of annealing temperature on the formation of the PtSi phase. distribution of silicides and the surface morphologies of silicides films is investigated by XPS. AFM. It is shown that the phase sequences of th...The effect of annealing temperature on the formation of the PtSi phase. distribution of silicides and the surface morphologies of silicides films is investigated by XPS. AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-st with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.展开更多
The forming process of silicide coatings on pure Mo and Mo-base alloys, obtained by the gas- phase deposition method. has been studied by examining the microstructure of coatings and the relationship between coating t...The forming process of silicide coatings on pure Mo and Mo-base alloys, obtained by the gas- phase deposition method. has been studied by examining the microstructure of coatings and the relationship between coating thickness and process parameters. It was shown that the growth of coatings was diffusion-controlled, the diffusion of silicon to be coated into Mo or Mo-base alloys was mainly responsible for the formation of silicide. The relationship between initial silicide thickness and oxidation resistance was also investigated, and the equation of service life of the coatings at high temperature in air is presented.展开更多
By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si （100） substrates in a radio-frequency magnetron sputtering system. A...By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si （100） substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.展开更多
文摘The effect of annealing temperature on the formation of the PtSi phase. distribution of silicides and the surface morphologies of silicides films is investigated by XPS. AFM. It is shown that the phase sequences of the films change from Pt-Pt2Si-PtSi-Si to Pt+Pt2Si+PtSi-PtSi-Si or Pt+Pt2Si+PtSi-PtSi-st with an increase of annealing temperature and the reason for the formation of mixed layers is discussed.
文摘The forming process of silicide coatings on pure Mo and Mo-base alloys, obtained by the gas- phase deposition method. has been studied by examining the microstructure of coatings and the relationship between coating thickness and process parameters. It was shown that the growth of coatings was diffusion-controlled, the diffusion of silicon to be coated into Mo or Mo-base alloys was mainly responsible for the formation of silicide. The relationship between initial silicide thickness and oxidation resistance was also investigated, and the equation of service life of the coatings at high temperature in air is presented.
基金Supported by the National Natural Science Foundation of China under Grant Nos 50472073 and 90406024-1, and the National Center for Nanoscience and Technology of China.
文摘By repeatedly pre-cleaning the sputtering chamber with Ar gas and in-situ isochronal annealing samples, NiSi films are successfully prepared on Si （100） substrates in a radio-frequency magnetron sputtering system. A comparison between the obtained NiSi and excess oxygen-contaminated Ni/Si films has been performed by EDX analysis of oxygen atomic content in both the films. Focused ion beam milling technology is employed to make the cross-sections of the samples for characterizing the NiSi film thickness and NiSi/Si interface roughness. The influences of nickel film thickness on the NiSi-film morphology and on the NiSi/Si interface roughness are studied.
