The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk c...The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.展开更多
文摘The thermal annealing temperature dependence of solid phase epitaxial recrystallization, migration and incorporation of Er in Er+-implanted Si(100) have been investigated. It is shown in our experiment that the bulk crystalline Si acts as a seed for the initial solid phase epitaxial recrystallization. When Er segregates at the crystalline/amorphous interface to some extent, the epitaxial recrystallization is disrupted and the remaining damaged region is polycrystalline. For the irradiation at 350 keV, the maximum incorporation concentration in the recrystallized region decreases with increasing annealing temperature. However, the maximum incorporation concentration is anomalously enhanced for the sample irradiated with 150 keV Er+ and annealed at 850 degrees C.
