In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programm...In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.展开更多
采用0.6μm SOI SONOS工艺技术平台研制了0.6μm SOI SONOS EEPROM管,分析其擦写特性。辐射前,SONOS EEPROM管的阈值窗口电压为5.04 V。利用Co-60γ源研究存储管的电离总剂量辐射特性,给出了SONOS EEPROM管擦除态、编程态的Id-Vg曲线及...采用0.6μm SOI SONOS工艺技术平台研制了0.6μm SOI SONOS EEPROM管,分析其擦写特性。辐射前,SONOS EEPROM管的阈值窗口电压为5.04 V。利用Co-60γ源研究存储管的电离总剂量辐射特性,给出了SONOS EEPROM管擦除态、编程态的Id-Vg曲线及阈值窗口随辐射总剂量的变化关系,在辐射总剂量达到500 Krad(Si)时,EEPROM管仍有0.7 V的阈值窗口,可以实现存储电路的设计,并对总剂量辐射引起存储管阈值漂移的机理进行了探讨。展开更多
文摘In silicon-oxide-nitride-oxide-silicon （SONOS） memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic＇s characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.
