A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memris...Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.展开更多
With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor...With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor＇s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell （MCL） tech- nology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis （SPICE） modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.展开更多
A subcircuit based model for the insulated gate bipolar transistor(IGBT) is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. ...A subcircuit based model for the insulated gate bipolar transistor(IGBT) is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without device destruction. Employing the MOS level 8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with measured results.展开更多
A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built bas...A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.展开更多
Atomic switches can be used in future nanodevices and to realize conceptually novel electronics in new types of computer architecture because of their simple structure, ease of operation, stability, and reliability. T...Atomic switches can be used in future nanodevices and to realize conceptually novel electronics in new types of computer architecture because of their simple structure, ease of operation, stability, and reliability. The atomic switch is a single solid-state switch with inherent learning abilities that exhibits various nonlinear behaviors with network devices. However, previous studies focused on experiments and nonvolatile memory applications, and studies on the application of the physical properties of the atomic switch in computing were nonexistent. Therefore, we present a simple behavioral model of a molecular gap-type atomic switch that can be included in a simulator. The model was described by three simple equations that reproduced the bistability using a double-well potential and was able to easily be transferred to a simulator using arbitrary numerical values and be integrated into HSPICE. Simulations using the experimental parameters of the proposed atomic switch agreed with the experimental results. This model will allow circuit designers to explore new architectures, contributing to the development of new computing methods.展开更多
A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introduc...A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.展开更多
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
基金the National Natural Science Foundation of China(Grant Nos.60921062,61003082,and 61272146)
文摘Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, and compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that the proposed model caters to the real device data very well, thus demonstrating that the model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.
基金Project supported by the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (GrantNo. 60921062)the National Natural Science Foundation of China (Grant No. 61003075)
文摘With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor＇s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell （MCL） tech- nology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis （SPICE） modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.
文摘A subcircuit based model for the insulated gate bipolar transistor(IGBT) is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without device destruction. Employing the MOS level 8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with measured results.
基金supported by the Major State Basic Research Development Program of China(No.2010CB327701)
文摘A new equivalent circuit model of organic-light-emitting-diode （OLED） is proposed. As the single- diode model is able to approximate OLED behavior as well as the multiple-diode model, the new model will be built based on it. In order to make sure that the experimental and simulated data are in good agreement, the constant resistor is exchanged for an exponential resistor in the new model. Compared with the measured data and the results of the other two OLED SPICE models, the simulated I-V characteristics of the new model match the measured data much better. This new model can be directly incorporated into an SPICE circuit simulator and presents good accuracy over the whole operating voltage.
文摘Atomic switches can be used in future nanodevices and to realize conceptually novel electronics in new types of computer architecture because of their simple structure, ease of operation, stability, and reliability. The atomic switch is a single solid-state switch with inherent learning abilities that exhibits various nonlinear behaviors with network devices. However, previous studies focused on experiments and nonvolatile memory applications, and studies on the application of the physical properties of the atomic switch in computing were nonexistent. Therefore, we present a simple behavioral model of a molecular gap-type atomic switch that can be included in a simulator. The model was described by three simple equations that reproduced the bistability using a double-well potential and was able to easily be transferred to a simulator using arbitrary numerical values and be integrated into HSPICE. Simulations using the experimental parameters of the proposed atomic switch agreed with the experimental results. This model will allow circuit designers to explore new architectures, contributing to the development of new computing methods.
文摘A modified drain source current suitable for simulation program with integrated circuit emphasis （SPICE） simulations of SiC MESFETS is presented in this paper. Accurate modeling of SiC MESFET is achieved by introducing three parameters in Triquint＇s own model （TOM）. The model, which is single piece and continuously differentiable, is verified by measured direct current （DC） I-V curves and scattering parameters （up to 20 GHz）.
