Surface Metallization of Glass Fiber(GF)/Polyetheretherketone(PEEK) Composite with Cu Coatings Deposited by Magnetron Sputtering and Electroplating

Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.

Structural and magnetic properties of micropolycrystalline cobalt thin films fabricated by direct current magnetron sputtering

Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.

High Permeability in Broadband of Co-sputtered [Fe-Fe_(20)Ni_(80)/Cr]_(n) Multilayer Films

To achieve high microwave permeability in wide-band for the micron-thick magnetic films,[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer structure was proposed by co-sputtering Fe and FeNi to form the magnetic layers and Cr to form the interlayers.The multilayer structure contributes to the high permeability by reducing the coercivity and diminishing out-of-plane magnetization.The maximum imaginary permeability of[Fe-Fe_(20)Ni_(80)/Cr]_(n) multilayer film reaches a large value of 800 at 0.52 GHz even though its overall thickness exceeds 1μm.Besides,the magnetic resonance frequency of the multilayer film can be modulated from 0.52 to 1.35 GHz by adjusting the sputtering power of Fe from 0 to 86 W,and its bandwidth for μ’’>200(Δf) is as large as 2.0 GHz.The desirable broad Δf of magnetic permeability,which can be well fitted by the Landau-Lifshitz-Gilbert equations,is due to dual magnetic resonances originated from double magnetic phases of Fe and FeNi that are of different saturation magnetization.The micron-thick multilayer films with high permeability in extended waveband are promising candidate for electromagnetic noise suppression application.

Effects of power on ion behaviors in radio-frequency magnetron sputtering of indium tin oxide(ITO)

This study delves into ion behavior at the substrate position within RF magnetron discharges utilizing an indium tin oxide(ITO)target.The positive ion energies exhibit an upward trajectory with increasing RF power,attributed to heightened plasma potential and initial emergent energy.Simultaneously,the positive ion flux escalates owing to amplified sputtering rates and electron density.Conversely,negative ions exhibit broad ion energy distribution functions(IEDFs)characterized by multiple peaks.These patterns are clarified by a combination of radiofrequency oscillation of cathode voltage and plasma potential,alongside ion transport time.This elucidation finds validation in a one-dimensional model encompassing the initial ion energy.At higher RF power,negative ions surpassing 100 e V escalate in both flux and energy,posing a potential risk of sputtering damages to ITO layers.

Study of bias voltage effect on the performance of ta-C coating prepared by high power impulse magnetron sputtering

The mechanical and frictional properties of ta-C coatings deposited on the substrate surface affect applications in the field of cutting tools and wear-resistant components.In this paper,the effect of bias parameters on the performance of ta-C coatings was investigated based on high power impulse magnetron sputtering(HiPIMS)technology.The results show that bias voltage has a significant effect on the deposition rate,structure,and wear resistance of the coating.In the range of bias voltage−50 V to−200 V,the ta-C coating performance was the best under bias voltage−150 V.The thickness reached 530.4 nm,the hardness value reached 35.996 GPa,and the bonding force in-creased to 14.2 N.The maximum sp3 bond content was 59.53% at this condition.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

Influence and determinative factors of ion-to-atom arrival ratio in unbalanced magnetron sputtering systems

Low pressure sputtering with a controlled ratio of ion flux to deposited atom flux at the condensing surface is one of the main directions of development of magnetron sputtering methods. Unbalanced magnetron sputtering, by producing dense secondary plasma around the substrate, provides a high ion current density. The closed-field unbalanced magnetron sputtering system （CFUBMS） has been established as a versatile technique for high-rate deposition high-quality metal, alloy, and ceramic thin films. The＇key factor in the CFUBMS system is the ability to transport high ion currents to the substrate, which can enhance the formation of full dense coatings at relatively low value homologous temperature. The investigation shows that the energy of ions incidenced at the substrate and the ratio of the flux of these ions to the flux of condensing atoms are the fundamental parameters in determining the structure and properties of films produced by ion-assisted deposition processes. Increasing ion bombardment during deposition combined with increasing mobility of the condensing atoms favors the formation of a dense microstructure and a smooth surface.

Recent Developments in Magnetron Sputtering

The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.

Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering

In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-in Cell/Monte Carlo Collision （PIC/MCC） method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.

Microstructure and Oxidation Resistance of V Thin Films Deposited by Magnetron Sputtering at Room Temperature

Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.

THE EFFECTS OF SPUTTERING POWER ON STRUCTURE AND ELECTRICAL PROPERTIES OF Cu FILMS

Cu films with thickness of about 500nm were deposited on glass substrateswithout heating by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers weremaintained at 390V X 0.27A, 430V X 0.70A and 450V X l.04A, and the corresponding deposition rates ofCu film reached 35nm/min, l04nm/min and 167nm/min. X-ray diffraction, scanning electron microscopyand atomic force microscopy were used to observe the structural characteristics of the films. Theresistance of the films was measured using four-point probe technique. The amount of larger grainsincreases and the resistivity of the films decreases evidently with an increase in sputtering power.It is considered that the increase in deposition rate with sputtering power mainly weakens theinfluence of residual gas atoms on the growing film, and increases substrate and gas temperatures,resulting in the increase in grain size and the decrease in resistivity of the Cu film.

CORRELATION BETWEEN CONSTITUENT AND SPUTTERING RATE OF BINARY ALLOYS IN GLOW DISCHARGE LAMP

Investigation was made of the sputtering rate in glow discharge lamp with relaion to constituent of 25 different specimens of 6 binary systems.namely,Cr-Fe,Bi-Sb,Cu-Zn, Ag-Cu,Al-Zn and Cd-Sn.by measuring mass loss sfter each sputtering under constant Ar pressure and voltage applicd.The correlation.in general,between sputtering rate and concentration of constituent of these non-intermetallic binary alloys obeys the hyperbolic law under steady state,that may be approximately regarded as linear correlation only on certain special condition if the two components of the alloys with similar sputte ringrates.

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.

Synthesis and properties of Cr-Al-Si-N films deposited by hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and DC pulse sputtering

The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.

Influences of working pressure on properties for TiO_2 films deposited by DC pulse magnetron sputtering

TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.

Cu_2ZnSnS_4 thin films prepared by sulfurization of ion beam sputtered precursor and their electrical and optical properties

Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.

Lithium intercalation/de-intercalation behavior of a composite Sn/C thin film fabricated by magnetron sputtering

A tin film of 320 nm in thickness on Cu foil and its composite film with graphite of-50 nm in thickness on it were fabricated by magnetron sputtering. The surface morphology, composition, surface distributions of alloy elements, and lithium intercalation/de-intercalation behaviors of the fabricated films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, electron probe microanalyzer （EPMA）, X-ray photoelectron spectroscopy （XPS）, inductively coupled plasma atomic emission spectrometry （ICP）, cyclic voltammetry （CV）, and galvanostatic charge/discharge （GC） measurements. It is found that the lithium intercalation/de-intercalation behavior of the Sn film can be significantly improved by its composite with graphite. With cycling, the discharge capacity of the Sn film without composite changes from 570 mAh/g of the 2nd cycle to 270 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 90% and 95%. Nevertheless, the discharge capacity of the composite Sn/C film changes from 575 mAh/g of the 2nd cycle to 515 mAh/g of the 20th cycle, and its efficiency for the discharge and charge is between 95% and 100%. The performance improvement of tin by its composite with graphite is ascribed to the retardation of the bulk tin cracking from volume change during lithium intercalation and de-intercalation, which leads to the pulverization of tin.

Influence of temperature on the microstructure of V_2O_5 film prepared by DC magnetron sputtering

V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.

Influence of oxygen gas content on the structural and optical properties of ZnO thin films deposited by RF magnetron sputtering at room temperature

Zinc oxide （ZnO） thin films were deposited on sapphire （0001） substrates at room temperature by radiofrequency （RF） magnetron sputtering at oxygen gas contents of 0%, 25%, 50% and 75%, respectively. The influence of oxygen gas content on the structural and optical properties of ZnO thin films was studied by a surface profile measuring system, X-ray diffraction analysis, atomic force microscopy, and UV spectro- photometry. It is found that the size of ZnO crystalline grains increases first and then decreases with the increase of oxygen gas content, and the maximum grain size locates at the 25% oxygen gas content. The crystalline quality and average optical transmittance （〉90%） in the visi- ble-light region of the ZnO film prepared at an oxygen gas content of 25% are better than those of ZnO films at the other contents. The obtained results can be attributed to the resputtefing by energetic oxygen anions in the growing process.