Energy Stabilities, Magnetic Properties, and Electronic Structures of Diluted Magnetic Semiconductor Zn1-xMnxS（001） Thin Films

We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.

转光棚膜对‘翠碧1号’烟苗生长及养分积累的影响

为探究转光膜在南平烟区烟草育苗中的应用效果,以‘翠碧1号’为试验材料,设普通聚乙烯棚膜和转光棚膜2个试验处理,研究转光膜对育苗棚内光照、温度和烟苗生长、养分积累的影响。结果表明,转光膜可调节育苗棚内光照和温度,转光膜处理育苗棚内13:00和14:00的光合有效辐射强度和透光率低于普通膜,而15:00和16:00的光合有效辐射强度和透光率高于普通膜。通过分析育苗棚内温度日变化发现,转光膜处理育苗棚内白天(8:00—16:00)的温度低于普通膜处理,其他时间高于普通膜处理。转光膜促进烟株的生长,与普通膜相比,转光膜处理的根系总根长、根表面积、根系体积、分支数等指标和根系干重、总干重显著高于普通膜处理。转光膜显著影响了养分的吸收和积累,转光膜处理烟苗地上部氮含量、地下部钙含量、整株磷含量和铜含量显著高于普通膜处理,而地上部钙含量和镁含量低于普通膜处理;转光膜处理促进了烟苗氮磷钾的累积。转光膜通过调节育苗棚内的光强和温度,促进烟苗生长和养分吸收,提高烟苗干物质和养分积累量。

电容器用双向拉伸聚4-甲基-1-戊烯(BOPMP)薄膜开发与应用

聚4-甲基-1-戊烯(PMP)是一种具有等规结构的新型热塑性塑料,PMP为结晶性树脂,熔点在235℃~240℃之间,耐热性好,可在高温下使用,并具有卓越的电气绝缘和介电性能。与聚丙烯树脂相比,熔点高60℃,介电常数、介电损耗相近。随着我国电子工业的发展,PMP的用量在近年来有大幅的增长。目前世界上只有日本三井化学株式会社生产,由于产量有限、售价较高,限制了PMP在国内的应用。为此本文尝试采用双向拉伸的方法,试制聚4-甲基-1-戊烯(BOPMP)薄膜,并加工成金属化膜,试制电容器,最后对电容器的性能进行相应测试评价。采用不同牌号原料生产BOPMP薄膜,其电压击穿强度差别较大,不同频率下的BOPMP薄膜电容器损耗角正切值、介电常数均与BOPP薄膜电容器接近,但其高温下的性能有待进一步验证。如何提升BOPMP薄膜电压击穿强度及其耐热性,开发出适宜于双向拉伸的PMP粒子原料,生产出高质量的BOPMP电容薄膜,将是未来重点研究的方向。

Metal Precursor Influence on Performance of CuIn1-xGaxSe2 Films

CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga） and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 ℃ for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa （20%Ga） and bottom CuGa （20%Ga） alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross- sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa：In：CuGa thickness ratio of 7：20：3 （sample-2-se） was of chalcopyrite structure with the preferred （112） orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current- voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency （3.59%） and good spectrum response.

Formation of epitaxial Tl_2Ba_2Ca_2Cu_3O_(10) superconducting films by dc-magnetron sputtering and triple post-annealing method

For obtaining pure phase T12Ba2Ca2Cu3O10 （T1-2223） films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, T12Ba2CaCu2O8 （T1-2212） is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared T1-2212 inter-phase is converted into T1-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of T1-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction （XRD） θ-2θ scans, 09 scans and rotational φ scans show that each of the T1-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy （SEM）. The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.

Effect of concentration of cadmium sulfate solution on structural,optical and electric properties of Cd_(1-x)Zn_(x)S thin films

Cd_(1-x)Zn_(x)S thin films were deposited by chemical bath deposition(CBD)on the glass substrate to study the influence of cadmium sulfate concentration on the structural characteristics of the thin film.The SEM results show that the thin film surfaces under the cadmium sulfate concentration of 0.005 M exhibit better compactness and uniformity.The distribution diagrams of thin film elements illustrate the film growth rate changes on the trend of the increase,decrease,and increase with the increase of cadmium sulfate concentration.XRD studies exhibit the crystal structure of the film is the hexagonal phase,and there are obvious diffraction peaks and better crystallinity when the concentration is 0.005 M.Spectrophotometer test results demonstrate that the relationship between zinc content x and optical band gap value E_(g) can be expressed by the equation E_(g)(x)=0.59x^(2)+0.69x+2.43.Increasing the zinc content can increase the optical band gap,and the absorbance of the thin film can be improved by decreasing the cadmium sulfate concentration,however,all of them have good transmittance.At a concentration of 0.005 M,the thin film has good absorbance in the 300-800 nm range,80%transmittance,and band gap value of 3.24 eV,which is suitable for use as a buffer layer for solar cells.

Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111)

Germanium-tin films with rather high Sn content （28.04% and 29.61%） are deposited directly on Si （100） and Si （111） substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge1-xSnx films is investigated by x-ray photoelectron spectroscopy （XPS） and atomic force microscopy （AFM）. The x-ray diffraction （XRD） is also performed to determine the crystallinities of the Ge1-xSnx films. The experimental results indicate that root mean square （RMS） values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400℃. The diameter of the Sn three-dimensional （3D） island becomes larger than that of an as-grown sample when the annealing temperature is 700℃. In addition, the Sn surface composition decreases when annealing temperature ranges from 400℃ to 700℃. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600℃. The present investigation demonstrates that the crystallinity of Ge1-xSnx/Si （111） has no obvious advantage over that of Ge1-xSnx/Si （100） and the selection of Si （111） substrate is an effective method to improve the surface morphologies of Ge1-xSnx films. We also find that more severe Sn surface segregation occurs in the Ge1-xSnx/Si （111） sample during annealing than in the Ge1-xSnx/Si （100） sample.

Synthesis of TS-1 Films on Porous Supports for Epoxidation ofAllyl Chloride by Hydrogen Peroxide

Titanium silicalite-1(TS-1)films were synthesized on stainless steel plate,glass slide and monolith supports via an in-situ hydrothermal method.Characterization data showed that the formation of TS-1 films was easier on the porous flat support with rough surface such as monolith than on the smooth non-porous supports like glass slide and stainless steel plate.The film on the monolith had the highest uniformity and smallest size of crystals.The catalytic property of monolithsupported film was tested for epoxidation of allyl chloride(ACH)by H2O2in a fixed bed reactor.Under the condition of a methanol(solvent)/ACH(90% )/H2O2(30% )ratio of 12:1:1,a LHSV of 1.35 h-1and a temperature of 318 K,the conversion of allyl chloride and the selectivity to epichlorohydrin reached 79% and 51% ,respectively.

Lattice Effect on Magnetic and Electrical Properties of Ln_(2/3)Pb_(1/3)MnO_3(Ln=La,Pr,Nd)Films

Lattice effect on magnetic and electrical transport properties of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） films prepared by RF magnetron sputtering technique were investigated. With the decrease of the average ions radius 〈rA〉, the structure of Ln2/3Pb1/3MnO3 （Ln=La, Pr, Nd） targets transit from the rhombohedral phase to the orthorhombic phase, and the Curie temperature reduces rapidly with the decrease of 〈rA〉. The electrical properties show that films are the metallic state which can be fitted to the formula： ρ（T）=ρ0 ＋ ρ1T^2 ＋ ρ2T^4.5 at low temperatures. The temperature range of the ferromagnetic metallic state becomes narrow with the decrease of 〈rA〉. The phenomenon can be explained by the lattice effect.

Composition-induced structural modifications in the quaternary CuIn1-xGaxSe2 thin films： bond properties versus Ga content

In this paper the dependence of structural properties of the quaternary CuIn1-xGaxSe2 films with tetragonal structure on the Ga content has been systematically investigated by Raman scattering and x-ray diffraction spectra. The shift of the dominant A1 mode, unlike the lattice constants, does not follow the linear Vegard law with increasing Ga content x, whereas exhibits approximately polynomial change from 174 cm^-1 for CuInSe2 to 185 cm^-1 for CuGaSe2. Such behaviour should be indicative of presence of the asymmetric distribution of Ga and In on a microscopic scale in the films, due to Ga addition. The changes in the tetragonal distortion η lead to a significant variation in the anion displacement parameter U, which should be responsible for the evolution of bond parameters and resultant Raman bands with x.

X-ray Photoelectron Spectroscopy Studies of Ti_(x)Al_(1-x)N Thin Films Prepared by RF Reactive Magnetron Sputtering

TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the Nls core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p3/2 line between TiN and TixAl1-xN th77pj in film was 0.7 eV.

Structure and oxidation resistance of W_(1-x)Al_xN composite films

A series of W1?xAlxN films(0<x<38.6%,mole fraction)were deposited by reactive magnetron sputtering.The composition,microstructure,mechanical properties and oxidation resistance of the films were characterized by EPMA,XRD,XPS,nano-indentation,SEM and HRTEM.The effect of Al content on the microstructure and oxidation resistance of W1?xAlxN films was investigated.The results show that WN film has a face-centered cubic structure.The preferred orientation changes from(111)to(200).The W1?xAlxN films consist of a mixture of face-centered cubic W(Al)N and hexagonal wurtzite structure AlN phases.The hardness of the W1?xAlxN films first increases and then decreases with the Al content increasing.The maximum hardness is36GPa,which is obtained at32.4%Al(mole fraction).Compared with WN film,the W1-xAlxN composite films show much better oxidation resistance because of the formation of dense Al2O3oxide layer on the surface.

Preparation and Effect of Oxygen Annealing on the Electrical and Magnetic Properties of Epitaxial (0001) Zn_(1-x)Co_xO Thin Films

Epitaxial （0001）-oriented Zn1-xCoxO （x= 0.01, 0.05 and 0.1） thin films were grown on c-sapphire substrates by pulsed laser deposition. The XRD analysis, optical transmittance and XPS measurements revealed that the Co2＋ substituted Zn2＋ ions were incorporated into the lattice of ZnO in Zn1-xCoxO thin films. The electrical properties measurements revealed that the Co concentration had a non- monotonic influence on the electrical properties of the Zn1-xCoxO thin films due to the defects resulted from imperfections induced by Co substitution. The resistivity remarkably increased and the carrier concentration remarkably decreased in Zn1-x CoxO thin films after oxygen annealing at 600 ℃ under 15 Pa O2 pressure for 60 mins. Room-temperature ferromagnetic was observed and the ferromagnetic Co amount was smaller than the nominal Co concentration for Zn1-xCoxO samples before oxygen annealing. After oxygen annealing, the Zn1-x CoxO thin films exhibited paramagnetic behavior. It is suggested that the room-temperature ferromagnetic ofZn1-x CoxO thin films may attribute to defects or carriers induced mechanism.

不同聚乙烯膜厚度对1-甲基环丙烯处理的‘红丰’梨果实冷藏期间果实品质的影响

为延长‘红丰’梨采后贮藏保鲜期,提升果实贮藏品质,该试验采用不同厚度聚乙烯膜包装经0.4μL/L 1-甲基环丙烯(1-methylcyclopropene,1-MCP)保鲜剂处理后的‘红丰’梨果实,于冷藏期间测定果实相关指标,探索适宜聚乙烯膜包装厚度。结果表明,0.015 mm聚乙烯(polyethylene,PE)膜包装可有效维持果实硬度,延缓果皮转黄,延缓可溶性固形物和可滴定酸含量的增加,有效抑制总酚含量降低,降低果肉褐变指数,有效抑制丙二醛含量和相对电导率的增加,抑制多酚氧化酶活性,促进抗氧化关键酶活性。因此,0.015 mm PE膜包装可通过一定程度上维持细胞膜完整性,降低膜脂氧化程度,提高果实抗氧化能力从而延缓1-MCP处理果实衰老和果肉褐变。该试验为‘红丰’梨采后贮藏保鲜方式研究奠定了理论基础。

SYNTHESIS OF PERFLUORO-1-OCTANESULFONATED FULLERENE AND THE FRICTION PROPERTIES OF ITS THIN FILM

A star-shaped compound of perfluoro-1-octanesulfonated fullerene was synthesized. The measurement of the friction for its spin-coating film by friction force microscopy (FFM) reveals that the films possess lower friction force compared to that of the star-shaped C-60-polystyrene films.

Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films

LaSrMnOfilms are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.

Room-temperature ferromagnetism induced by Cu vacancies in Cu_x(Cu_2O)_(1-x) granular films

Cux（Cu2O）1-x（0.09 x 1.00） granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux（Cu2O）1-x deposition. Room-temperature ferromagnetism（FM） is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux（Cu2O）1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

Optical study of Ba(Mn_xTi_(1-x)O_3) thin films by spectroscopic ellipsometry

Stoichiometric Ba（MnxTi（1-x）O3） （BMT） thin films with various values of x were deposited on Si（111） substrates by the sol-gel technique. The influence of Mn content on the optical properties was studied by spectroscopic ellipsometry （SE） in the UV–Vis–NIR region. By fitting the measured ellipsometric parameter （Ψ and Δ） with a four-phase model （air/BMT＋voids/BMT/Si（111））, the key optical constants of the thin films have been obtained. It was found that the refractive index n and the extinction coefficient k increase with increasing Mn content due to the increase in the packing density. Furthermore, a strong dependence of the optical band gap Eg on Mn/Ti ratios in the deposited films was observed, and it was inferred that the energy level of conduction bands decreases with increasing Mn content.

Preparation of Y_(1-x)Ho_xBa_2Cu_3O_(7-δ) Superconductive Thin Films

Y_(1-x)Ho_xBa_2Cu_3O_(7-δ)(0<x<1) sinsle crystal thin films oriented with the caxis perpendicular to the sur-face were grown by DC magnetron sputtering technique. Target was pieced together with half of YBa_2Cu_3O_(7-δ)(YBCO) and half of HoBa_2Cu_3O_(7-δ)(HBCO) superconducting materials. As the distance between HBCO targetmaterial and substrate is varied , the Ho content in material is changed respectively. When the content of Ho is0. 7 (atom ratio) , the T_c>83K.

Effects of Mg Doping Concentration on Resistive Switching Behavior and Properties of SrTi1-yMgyO3 Films

SrTi1-yMgyO3 films were synthesized through sol-gel method on p^+-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi1-yMgyO3 films were investigated. All SrTi1-yMgyO3 films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y=0.08, the SrTi1-yMgyO3 films show the largest RHRS/RLRS of 105 and better fatigue endurance after 103 cycles. When y≥0.08, the distribution of Vset and Vreset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y=0.16.