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TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid
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作者 吴昌聚 王昊 +2 位作者 金仲和 马慧莲 王跃林 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1094-1102,共9页
HF etching of sacrificial layers with different The existing model cannot fit the experimental data well perimental data increases with etching time. A modified structures, namely channel, bubble, and joint-channel, i... HF etching of sacrificial layers with different The existing model cannot fit the experimental data well perimental data increases with etching time. A modified structures, namely channel, bubble, and joint-channel, is studied. The error of etching rate between the existing model and the exmodel considering the diffusion coefficient as a function of HF concentration and temperature is proposed. The etching rate coefficient as a function of temperature and the effect of reaction production are also considered in the modified model. For the joint-channel structure, a new mathematical model for the etching profile is also adopted. Experimental data obtained with channel, bubble, and joint-channel structures are compared with the modified model and the previous model. The results show that the modified model matches the experiments well. 展开更多
关键词 diffusion coefficient etching rate sacrificial oxide TDC model
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