Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate...Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.展开更多
We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions fo...We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly（200）-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.展开更多
基金financial support of FhG Internal Programs(Grant No.692 280)
文摘Two sapphire substrates were tightly bonded by irradiation with a 1064 nm nanosecond laser and using a sputtered 50 nm-titanium thin film as an absorbing medium.Upon laser irradiation,aluminum from the upper substrate is incorporated into the thin film,forming Ti-Al-O compounds.While the irradiated region becomes transparent,the bond quality was evaluated by scanning acoustic microscopy.
基金Project supported by the the NKRDP of China(Grant No.2016YFA0301802)the National Natural Science Foundation of China(Grant Nos.91321310,11274156,11504165,11474152,and 61521001)
文摘We fabricated TiN coplanar waveguides using standard lithography techniques followed by ICP etch. In order to achieve high quality factor, we investigated the film growth by choosing different deposition conditions for various substrates. Quality factors of waveguide resonators were measured at 20 mK in both high and low microwave power limits. An inner quality factor of several million was achieved at high power limit for a predominantly（200）-oriented TiN film which was grown on HF cleaned silicon wafer. A quality factor of larger than one million was achieved at high power limit for TiN film grown on sapphire.
