The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor ...The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 e V, exhibiting an intrinsic solar-blindness for deep-ultraviolet(DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of-10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light.展开更多
A novel aluminum iron oxide （Al/AlFe2O4/p-Si） Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite （AlFe2O4） was examined by atomic force micros...A novel aluminum iron oxide （Al/AlFe2O4/p-Si） Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite （AlFe2O4） was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor （n） and barrier height （ФB0） of the photodiode. The values of n and ФB0 for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance （Rs） are determined using Cheung＇s method and Ohm＇s law. The values of Rs and shunt resistance （Rsh） are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.展开更多
We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detecto...We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.展开更多
基金supported by Grant-in-Aid for Scientific Research in the Ministry of Education,Culture,Sports,Science and Technology of the Japanese Government(No.18360341)
文摘The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 e V, exhibiting an intrinsic solar-blindness for deep-ultraviolet(DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of-10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light.
文摘A novel aluminum iron oxide （Al/AlFe2O4/p-Si） Schottky photodiode was successfully fabricated via the sol-gel coating process. The microstructure of the spinel ferrite （AlFe2O4） was examined by atomic force microscopy. The current-voltage characteristics of the fabricated photodiode were studied under dark and different illumination conditions at room temperature. By using the thermionic emission theory, the forward bias I-V characteristics of the photodiode are analyzed to determine the main electrical parameters such as the ideality factor （n） and barrier height （ФB0） of the photodiode. The values of n and ФB0 for all conditions are found to be about 7.00 and 0.76 eV, respectively. In addition, the values of series resistance （Rs） are determined using Cheung＇s method and Ohm＇s law. The values of Rs and shunt resistance （Rsh） are decreased with the increase of illumination intensity. These new spinel ferrites will open a new avenue to other spinel structure materials for optoelectronic devices in the near future.
基金Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314)the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)the Fundamental Research Funds for the Central Universities,China。
文摘We report the edge-defined-film-fed(EFG)-grown β-Ga_(2)O_(3)-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10^(4) at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10^(10) Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga_(2)O_(3)-based Schottky diode solar-blind photodetectors.
