In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loo...In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.展开更多
As an emerging technology to convert environmental high-entropy energy into electrical energy,triboelectric nanogenerator(TENG)has great demands for further enhancing the service lifetime and output performance in pra...As an emerging technology to convert environmental high-entropy energy into electrical energy,triboelectric nanogenerator(TENG)has great demands for further enhancing the service lifetime and output performance in practical applications.Here,an ultra-robust and high-performance rotational triboelectric nanogenerator(R-TENG)by bearing charge pumping is proposed.The R-TENG composes of a pumping TENG(P-TENG),an output TENG(O-TENG),a voltage-multiplying circuit(VMC),and a buffer capacitor.The P-TENG is designed with freestanding mode based on a rolling ball bearing,which can also act as the rotating mechanical energy harvester.The output low charge from the P-TENG is accumulated and pumped to the non-contact O-TENG,which can simultaneously realize ultralow mechanical wear and high output performance.The matched instantaneous power of R-TENG is increased by 32 times under 300 r/min.Furthermore,the transferring charge of R-TENG can remain 95%during 15 days(6.4×10^(6)cycles)continuous operation.This work presents a realizable method to further enhance the durability of TENG,which would facilitate the practical applications of high-performance TENG in harvesting distributed ambient micro mechanical energy.展开更多
To meet the demands for different supply voltage levels on SOC required by digital modules like CPU core and analog modules,a novel dual-output charge pump is proposed. The charge pump can output a step-up and a step-...To meet the demands for different supply voltage levels on SOC required by digital modules like CPU core and analog modules,a novel dual-output charge pump is proposed. The charge pump can output a step-up and a step-down voltage simultaneously with a high driving capability. The multiple gain pair technique was introduced to enhance its efficiency. The proposed co-use technology for capacitors and switch arrays reduced its cost. The charge pump was designed and fabricated in a TSMC 0.35μm mixed-signal CMOS process. A group of analytical equations were derived to model its static characteristics. A state-space model was derived to describe its small-signal dynamic behavior. Analytical predictions were verified by Spectre simulation and testing. The consistency of simulated results as well as test results with analytical predictions demonstrated the high precision of the derived analytical equations and the developed models.展开更多
An improved charge-averaging charge pump and the corresponding circuit implementation are presented. The charge-averaging charge pump proposed by Koo is analyzed and a new scheme is proposed. This new scheme decreases...An improved charge-averaging charge pump and the corresponding circuit implementation are presented. The charge-averaging charge pump proposed by Koo is analyzed and a new scheme is proposed. This new scheme decreases power by 1/3 and eliminates the practical defects in the original. Spectre Verilog behavioral simulation results show that the proposed scheme can strongly reduce the energy of spurs. Circuit implementation of this new charge pump for a frequency synthesizer with a fractional division ratio of 1/3 is then presented and multi-level simulation is performed to validate its feasibility at the circuit level. The simulation results show this new scheme outputs a flat voltage curve in a locked state and can thus effectively suppress fraction spurs.展开更多
A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that...A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that the output voltage and power efficiency are improved by 125% and 104% respectively at 13.56MHz for a 1V sinusoidal input compared to the traditional MOS diodes structure.展开更多
In silicon-oxide-nitride-oxide-silicon (SONOS) memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic's characteristics,such as reading,programm...In silicon-oxide-nitride-oxide-silicon (SONOS) memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic's characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.展开更多
A novel structure for a charge pump circuit is proposed, in which the charge-pump (CP) current can adaptively regulated according to phase-locked loops (PLL) frequency synthesis demand. The current follow technolo...A novel structure for a charge pump circuit is proposed, in which the charge-pump (CP) current can adaptively regulated according to phase-locked loops (PLL) frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor (CMOS) mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.展开更多
A self-balanced charge pump (CP) with fast lock circuit to achieve nearly zero phase error is proposed and analyzed. The proposed CP is designed based on the SMIC 0.25μm 1P5M complementary metal oxide semiconductor...A self-balanced charge pump (CP) with fast lock circuit to achieve nearly zero phase error is proposed and analyzed. The proposed CP is designed based on the SMIC 0.25μm 1P5M complementary metal oxide semiconductor (CMOS) process with a 2.5 V supply voltage, HSPICE simulation shows that even if the mismatch of phase/frequency detector (PFD) was beyond 10%, the charge pump could still keep nearly zero phase error, Incorporated fast lock circuit can shorten start-up time to below 300 ns.展开更多
A 3.5 times PLL clock frequency multiplier for low voltage different signal (LVDS) driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator (...A 3.5 times PLL clock frequency multiplier for low voltage different signal (LVDS) driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator (VCO) is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor (CMOS) process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .展开更多
A novel nanoscale watermill for the unidirectional transport of water molecules through a curved single-walled carbon nanotube(SWNT) is proposed and explored by molecular dynamics simulations. In this nanoscale syst...A novel nanoscale watermill for the unidirectional transport of water molecules through a curved single-walled carbon nanotube(SWNT) is proposed and explored by molecular dynamics simulations. In this nanoscale system, a revolving charge is introduced to drive a water chain confined inside the SWNT, the charge and the tube together serving as a nano waterwheel and nano engine. A resonance-like phenomenon is found, and the revolving frequency of the charge plays a key role in pumping the water chain. The water flux across the SWNT increases with respect to the revolving frequency of the external charge and it reaches its maximum when the frequency is 4 THz. Correspondingly, the number of hydrogen bonds in the water chain inside the SWNT decreases dramatically as the frequency increases from 4 THz to 25 THz. The mechanism behind the resonance phenomenon has been investigated systematically. Our findings are helpful for the design of nanoscale fluidic devices and energy converters.展开更多
基金supported by the National Natural Science Foundation of China under Grant 62274189the Natural Science Foundation of Guangdong Province,China,under Grant 2022A1515011054the Key Area R&D Program of Guangdong Province under Grant 2022B0701180001.
文摘In this paper,an NMOS output-capacitorless low-dropout regulator(OCL-LDO)featuring dual-loop regulation has been proposed,achieving fast transient response with low power consumption.An event-driven charge pump(CP)loop with the dynamic strength control(DSC),is proposed in this paper,which overcomes trade-offs inherent in conventional structures.The presented design addresses and resolves the large signal stability issue,which has been previously overlooked in the event-driven charge pump structure.This breakthrough allows for the full exploitation of the charge-pump structure's poten-tial,particularly in enhancing transient recovery.Moreover,a dynamic error amplifier is utilized to attain precise regulation of the steady-state output voltage,leading to favorable static characteristics.A prototype chip has been fabricated in 65 nm CMOS technology.The measurement results show that the proposed OCL-LDO achieves a 410 nA low quiescent current(IQ)and can recover within 30 ns under 200 mA/10 ns loading change.
基金supported by the National Natural Science Foundation of China(Nos.51922023,61874011)Fundamental Research Funds for the Central Universities(E1EG6804)
文摘As an emerging technology to convert environmental high-entropy energy into electrical energy,triboelectric nanogenerator(TENG)has great demands for further enhancing the service lifetime and output performance in practical applications.Here,an ultra-robust and high-performance rotational triboelectric nanogenerator(R-TENG)by bearing charge pumping is proposed.The R-TENG composes of a pumping TENG(P-TENG),an output TENG(O-TENG),a voltage-multiplying circuit(VMC),and a buffer capacitor.The P-TENG is designed with freestanding mode based on a rolling ball bearing,which can also act as the rotating mechanical energy harvester.The output low charge from the P-TENG is accumulated and pumped to the non-contact O-TENG,which can simultaneously realize ultralow mechanical wear and high output performance.The matched instantaneous power of R-TENG is increased by 32 times under 300 r/min.Furthermore,the transferring charge of R-TENG can remain 95%during 15 days(6.4×10^(6)cycles)continuous operation.This work presents a realizable method to further enhance the durability of TENG,which would facilitate the practical applications of high-performance TENG in harvesting distributed ambient micro mechanical energy.
文摘To meet the demands for different supply voltage levels on SOC required by digital modules like CPU core and analog modules,a novel dual-output charge pump is proposed. The charge pump can output a step-up and a step-down voltage simultaneously with a high driving capability. The multiple gain pair technique was introduced to enhance its efficiency. The proposed co-use technology for capacitors and switch arrays reduced its cost. The charge pump was designed and fabricated in a TSMC 0.35μm mixed-signal CMOS process. A group of analytical equations were derived to model its static characteristics. A state-space model was derived to describe its small-signal dynamic behavior. Analytical predictions were verified by Spectre simulation and testing. The consistency of simulated results as well as test results with analytical predictions demonstrated the high precision of the derived analytical equations and the developed models.
文摘An improved charge-averaging charge pump and the corresponding circuit implementation are presented. The charge-averaging charge pump proposed by Koo is analyzed and a new scheme is proposed. This new scheme decreases power by 1/3 and eliminates the practical defects in the original. Spectre Verilog behavioral simulation results show that the proposed scheme can strongly reduce the energy of spurs. Circuit implementation of this new charge pump for a frequency synthesizer with a fractional division ratio of 1/3 is then presented and multi-level simulation is performed to validate its feasibility at the circuit level. The simulation results show this new scheme outputs a flat voltage curve in a locked state and can thus effectively suppress fraction spurs.
文摘A novel AC to DC charge pump with high performance is presented. Due to the pMOS structure and threshold voltage canceling technology, the efficiency and the output voltage are greatly improved. Test results show that the output voltage and power efficiency are improved by 125% and 104% respectively at 13.56MHz for a 1V sinusoidal input compared to the traditional MOS diodes structure.
文摘In silicon-oxide-nitride-oxide-silicon (SONOS) memory and other charge trapping memories, the charge distribution after programming operation has great impact on the devic's characteristics,such as reading,programming/erasing, and reliability. The lateral distribution of injected charges can be measured precisely using the charge pumping method. To improve the precision of the actual measurement, a combination of a constant low voltage method and a constant high voltage method is introduced during the charge pumping testing of the drain side and the source side, respectively. Finally, the electron distribution after channel hot electron programming in SONOS memory is obtained,which is close to the drain side with a width of about 50nm.
文摘A novel structure for a charge pump circuit is proposed, in which the charge-pump (CP) current can adaptively regulated according to phase-locked loops (PLL) frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor (CMOS) mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.
基金Supported by the National High Technology Re-search and Development Programof China (2004AA122310)
文摘A self-balanced charge pump (CP) with fast lock circuit to achieve nearly zero phase error is proposed and analyzed. The proposed CP is designed based on the SMIC 0.25μm 1P5M complementary metal oxide semiconductor (CMOS) process with a 2.5 V supply voltage, HSPICE simulation shows that even if the mismatch of phase/frequency detector (PFD) was beyond 10%, the charge pump could still keep nearly zero phase error, Incorporated fast lock circuit can shorten start-up time to below 300 ns.
基金Supported by the National Key Pre-Research Project of China (413010701-3)
文摘A 3.5 times PLL clock frequency multiplier for low voltage different signal (LVDS) driver is presented. A novel adaptive charge pump can automatically switch the loop bandwidth and a voltage-controlled oscillator (VCO) is designed with the aid of frequency ranges reuse technology. The circuit is implemented using 1st Silicon 0.25 μm mixed-signal complementary metal-oxide-semiconductor (CMOS) process. Simulation results show that the PLL clock frequency multiplier has very low phase noise and very short capture time .
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11005093 and 61274099)the Research Fund of Education Department of Zhejiang Province,China(Grant No.Y201223336)+2 种基金the Zhejiang Provincial Science and Technology Key Innovation Team,China(Grant No.2011R50012)the Key Laboratory of Zhejiang Province,China(Grant No.2013E10022)the Hong Kong Polytechnic University,China(Grant No.G-YL41)
文摘A novel nanoscale watermill for the unidirectional transport of water molecules through a curved single-walled carbon nanotube(SWNT) is proposed and explored by molecular dynamics simulations. In this nanoscale system, a revolving charge is introduced to drive a water chain confined inside the SWNT, the charge and the tube together serving as a nano waterwheel and nano engine. A resonance-like phenomenon is found, and the revolving frequency of the charge plays a key role in pumping the water chain. The water flux across the SWNT increases with respect to the revolving frequency of the external charge and it reaches its maximum when the frequency is 4 THz. Correspondingly, the number of hydrogen bonds in the water chain inside the SWNT decreases dramatically as the frequency increases from 4 THz to 25 THz. The mechanism behind the resonance phenomenon has been investigated systematically. Our findings are helpful for the design of nanoscale fluidic devices and energy converters.